Patent classifications
H03F3/19
PROGRAMMABLE CLAMPING DEVICES AND METHODS
Programmable clamping methods and devices providing adjustable clamping powers to accommodate different applications and requirements are disclosed. The described devices can use switchable clamping circuits having different structures, body-controlled clamping circuits, or clamping circuits adjusting their input power levels using programmable resistive ladders. Examples of how the disclosed devices can be combined to improve design flexibility are also provided.
PROGRAMMABLE CLAMPING DEVICES AND METHODS
Programmable clamping methods and devices providing adjustable clamping powers to accommodate different applications and requirements are disclosed. The described devices can use switchable clamping circuits having different structures, body-controlled clamping circuits, or clamping circuits adjusting their input power levels using programmable resistive ladders. Examples of how the disclosed devices can be combined to improve design flexibility are also provided.
Heterojunction bipolar transistor including ballast resistor and semiconductor device
A first sub-collector layer functions as an inflow path of a collector current that flows in a collector layer of a heterojunction bipolar transistor. A collector ballast resistor layer having a lower doping concentration than the first sub-collector layer is disposed between the collector layer and the first sub-collector layer.
Power amplifier circuit
A power amplifier circuit includes a first transistor having an emitter electrically connected to a common potential, a base to which a first high-frequency signal is input, and a collector from which a third high-frequency signal is output; a second transistor having an emitter electrically connected to the common potential, a base to which a second high-frequency signal is input, and a collector from which a fourth high-frequency signal is output; a first capacitance circuit electrically connected between the collector of the second transistor and the base of the first transistor; and a second capacitance circuit electrically connected between the collector of the first transistor and the base of the second transistor.
SYSTEMS AND METHODS FOR COMMUNICATING THROUGH A HARD PLASTIC MASK
The present disclosure relates generally to providing a flexible patch and system for communicating through hard plastic masks such as CPAP/BiPAP® masks. Using electronic circuitry and novel designs, the present systems and methods can detect speech vibrations and output audible speech from hard plastic mask wearers. For example, in certain embodiments, the present systems and methods can recognize speech through a CPAP/BiPAP® mask, filter out non-human voice related noise, and output the resulting speech of the mask wearer.
SYSTEMS AND METHODS FOR COMMUNICATING THROUGH A HARD PLASTIC MASK
The present disclosure relates generally to providing a flexible patch and system for communicating through hard plastic masks such as CPAP/BiPAP® masks. Using electronic circuitry and novel designs, the present systems and methods can detect speech vibrations and output audible speech from hard plastic mask wearers. For example, in certain embodiments, the present systems and methods can recognize speech through a CPAP/BiPAP® mask, filter out non-human voice related noise, and output the resulting speech of the mask wearer.
Doherty radio frequency amplifier circuitry
Doherty radio frequency (RF) amplifier circuitry includes an input node, an output node, a main amplifier path, and a peaking amplifier path. The main amplifier path is coupled between the input node and the output node and includes a main amplifier. The peaking amplifier path is coupled in parallel with the main amplifier path between the input node and the output node, and includes a peaking amplifier and a peaking variable gain preamplifier between the input node and the peaking amplifier. The peaking variable gain preamplifier is configured to adjust a current provided to the peaking amplifier.
Doherty radio frequency amplifier circuitry
Doherty radio frequency (RF) amplifier circuitry includes an input node, an output node, a main amplifier path, and a peaking amplifier path. The main amplifier path is coupled between the input node and the output node and includes a main amplifier. The peaking amplifier path is coupled in parallel with the main amplifier path between the input node and the output node, and includes a peaking amplifier and a peaking variable gain preamplifier between the input node and the peaking amplifier. The peaking variable gain preamplifier is configured to adjust a current provided to the peaking amplifier.
Front end module (FEM) with integrated functionality
A front end radio frequency (RF) module including one or more first filter circuits configured to implement a front end function by filtering first signals communicated between one or more first antenna and a transceiver and one or more second filter circuits configured to implement at least a portion of an additional network function within the front end RF module by filtering second signals communicated between one or more second antennas and the transceiver.
Front end module (FEM) with integrated functionality
A front end radio frequency (RF) module including one or more first filter circuits configured to implement a front end function by filtering first signals communicated between one or more first antenna and a transceiver and one or more second filter circuits configured to implement at least a portion of an additional network function within the front end RF module by filtering second signals communicated between one or more second antennas and the transceiver.