Various methods and circuital arrangements for biasing gates of stacked transistor amplifier that includes two series connected transistor stacks of different polarities are presented, where the amplifier is configured to operate according to different modes of operation. Such circuital arrangements operate in a closed loop with a feedback error voltage that is based on a sensed voltage at a common node of the two series connected transistor stacks. According to one aspect, gate biasing voltages to input transistors of each of the two series connected stacks are adjusted by respective current mirrors that are controlled based on the feedback error voltage. According to another aspect, other gate biasing voltages are generated by maintaining a fixed gate biasing voltage between any two consecutive gate basing voltages.

An amplifier circuit includes a high-voltage output stage. The high-voltage output stage includes an output terminal, a high-side output circuit, a low-side output circuit, and a feedback circuit. The high-side output circuit sources current to the output terminal, and includes a high-side input transistor, a first high-side cascode transistor coupled to the high-side input transistor, and a second high-side cascode transistor coupled to the first high-side cascode transistor and the output terminal. The low-side output circuit sinks current from the output terminal, and includes a low-side input transistor, a first low-side cascode transistor coupled to the low-side input transistor, and a second low-side cascode transistor coupled to the first low-side cascode transistor and the output terminal. The feedback circuit is configured to bias the second high-side cascode transistor and the second low-side cascode transistor based on a sense voltage generated by the high-side output circuit or the low-side output circuit.

An apparatus includes a radio-frequency (RF) circuit, which includes a power amplifier coupled to receive an RF input signal and to provide an RF output signal in response to a modified bias signal. The RF circuit further includes a bias path circuit coupled to modify a bias signal as a function of a characteristic of an input signal to generate the modified bias signal. The bias path circuit provides the modified bias signal to the power amplifier.

Various methods and circuital arrangements for biasing gates of stacked transistor amplifier that includes two series connected transistor stacks of different polarities are presented, where the amplifier is configured to operate according to different modes of operation. Such circuital arrangements operate in a closed loop with a feedback error voltage that is based on a sensed voltage at a common node of the two series connected transistor stacks. According to one aspect, gate biasing voltages to input transistors of each of the two series connected stacks are adjusted by respective current mirrors that are controlled based on the feedback error voltage. According to another aspect, other gate biasing voltages are generated by maintaining a fixed gate biasing voltage between any two consecutive gate basing voltages.

A linear amplifier is provided to have higher efficiency for an envelope tracking modulator. In one embodiment, a first stage amplifier circuit can be simply operated in a high gain mode or a high bandwidth mode for different applications, without using large chip area. In another embodiment, an output stage has a cascode structure whose dynamic range is controlled according to a voltage level of a supply voltage, to make a core device within the output stage have better protection and suitable dynamic range.

A low noise amplifier for an RF sampling analog front end. The amplifier includes digital step attenuation for applying a selected attenuation to signals received at an input node, and a gain stage coupled to amplify the attenuated signal from the digital step attenuation circuit. In a differential amplifier implementation, a first input capacitor is coupled between a positive side input node and an output of the negative side digital attenuation circuit, and a second input capacitor is coupled between a negative side input node and an output of the positive side digital step attenuation circuit. In some embodiments, variable feedback circuits are coupled between each input node and an output of the corresponding gain stage, to selectively apply active termination at the input at high gain settings of the amplifier. Variable input and output resistors, and programmable noise filtering at the output, are provided in some embodiments.

An amplifying circuit includes a first reconfigurable amplifier configured to selectively operate in a cascode mode or a non-cascode mode, wherein an input of the first reconfigurable amplifier is coupled to a first input of the amplifying circuit, and an output of the first reconfigurable amplifier is coupled to an output of the amplifying circuit. The amplifying circuit also includes a second reconfigurable amplifier configured to selectively operate in the cascode mode or the non-cascode mode, wherein an input of the second reconfigurable amplifier is coupled to a second input of the amplifying circuit, and an output of the second reconfigurable amplifier is coupled to the output of the amplifying circuit.

An amplifier includes a differential amplification block suitable for receiving and amplifying a first differential input signal and a second differential input signal; an output block suitable for determining an output signal according to a state of amplified signals outputted from the differential amplification block; and an output range restriction block suitable for controlling an output range of the output signal outputted from the output block based on a maximum clamping signal and a minimum clamping signal.

A power amplifier device includes a semiconductor substrate; a plurality of first transistors that are provided on the semiconductor substrate and receive input of a radio-frequency signal; a plurality of second transistors that are provided on the semiconductor substrate and electrically connected to the respective plurality of first transistors, and output a radio-frequency output signal obtained by amplifying the radio-frequency signal; a plurality of first bumps provided so as to overlay the respective plurality of first transistors; and a second bump provided away from the plurality of first bumps and provided so as not to overlay the plurality of first transistors and the plurality of second transistors. When viewed in plan from a direction perpendicular to a surface of the semiconductor substrate, a first transistor and a first bump, a second transistor, the second bump, a second transistor, and a first transistor and a first bump are arranged in sequence.

A power amplifier cell is disclosed having a first transistor with a first terminal coupled to ground, a second terminal, and a first control terminal. A second transistor has a third terminal coupled to the second terminal, a fourth terminal, and a second control terminal. Further included is a capacitor having a first plate coupled directly to the second control terminal and a second plate coupled to the ground. As such, there is no intervening inductor component coupled between the first plate and the second control terminal, leaving only parasitic inductance between the first plate and the second control terminal. The capacitor has a capacitance sized to resonate with the parasitic inductance at a resonant frequency substantially higher than a desired frequency of operation of the power amplifier cell.