A power amplifier, for a transmitter circuit is disclosed, which comprises at least one field-effect transistor having a gate terminal and a bulk terminal. The at least one field-effect transistor is configured to receive an input voltage at the gate terminal and a dynamic bias voltage at the bulk terminal. The power amplifier comprises a bias-voltage generation circuit configured to generate the dynamic bias voltage as a nonlinear function of an envelope of input signal. The input voltage is a linear function of the input signal. The bias-voltage generation circuit comprises a rectifier circuit configured to generate a rectified input voltage and an amplifier circuit, operatively connected to the rectifier circuit, configured to generate the dynamic bias voltage based on the rectified input voltage. The amplifier circuit is a variable-gain amplifier circuit and the power amplifier comprises a control circuit configured to tune the gain of the amplifier circuit.

A power amplifier, for a transmitter circuit is disclosed, which comprises at least one field-effect transistor having a gate terminal and a bulk terminal. The at least one field-effect transistor is configured to receive an input voltage at the gate terminal and a dynamic bias voltage at the bulk terminal. The power amplifier comprises a bias-voltage generation circuit configured to generate the dynamic bias voltage as a nonlinear function of an envelope of input signal. The input voltage is a linear function of the input signal. The bias-voltage generation circuit comprises a rectifier circuit configured to generate a rectified input voltage and an amplifier circuit, operatively connected to the rectifier circuit, configured to generate the dynamic bias voltage based on the rectified input voltage. The amplifier circuit is a variable-gain amplifier circuit and the power amplifier comprises a control circuit configured to tune the gain of the amplifier circuit.

A power amplifier (20) for a transmitter circuit (10) is disclosed. The power amplifier (20) comprises at least one field-effect transistor (100, 100n, 100p) having a gate terminal (110, 110n, 110p) and a bulk terminal (120, 120n, 120p), wherein the at least one field-effect transistor (100, 100n, 100n) is configured to receive an input voltage at the gate terminal (110, 110p, 110n) and a dynamic bias voltage at the bulk terminal (120, 120n, 120p). Furthermore, the power amplifier (20) comprises a bias-voltage generation circuit (130). The input voltage is a linear function of an input signal. The bias-voltage generation circuit (130) is configured to generate the dynamic bias voltage as a nonlinear function of an envelope of the input signal.

A power amplifier (20) for a transmitter circuit (10) is disclosed. The power amplifier (20) comprises at least one field-effect transistor (100, 100n, 100p) having a gate terminal (110, 110n, 110p) and a bulk terminal (120, 120n, 120p), wherein the at least one field-effect transistor (100, 100n, 100n) is configured to receive an input voltage at the gate terminal (110, 110p, 110n) and a dynamic bias voltage at the bulk terminal (120, 120n, 120p). Furthermore, the power amplifier (20) comprises a bias-voltage generation circuit (130). The input voltage is a linear function of an input signal. The bias-voltage generation circuit (130) is configured to generate the dynamic bias voltage as a nonlinear function of an envelope of the input signal.