H03F2203/45228

Apparatus and methods for power efficient CMOS and BiCMOS transmitters suitable for wireless applications

A silicon based (e.g., SiGe, CMOS, or BiCMOS) transmitter includes an algorithm that strategically segment and pre-distort the input signal according to its power; a reconfigurable power amplifier (PA) having a plurality of PA sections, wherein the plurality of PA sections comprise discrete weighted transistor arrays that are digitally turned OFF or ON according to a magnitude of an input signal; an impedance matching network equipped with a common-mode feedback (CMFB) mechanism configured to reduce common-mode glitches at an output of the PA due to ON/OFF manipulations of the PA segments; and a 1:N transformer, which comprises a capacitive matching engine and a power detector, disposed between the impedance matching network and the reconfigurable linear PA.

Bias circuit and power amplifier circuit

A bias circuit for a PA. A first transistor has its drain terminal and its gate terminal connected to a first circuit node and its source terminal connected to a first supply terminal, a first current source connected to the first circuit node, and a first resistor connected between the first and second circuit nodes. A second transistor receives a first component of a differential input signal to the PA at its gate terminal, has its drain terminal connected to the second circuit node and its source terminal connected to a second supply terminal, and a third transistor receives a second component of the differential input signal to the PA at its gate terminal, having its drain terminal connected to the second circuit node and its source terminal connected to a second supply terminal. The gates terminals of the second and the third transistors are biased by a first voltage.

Radio frequency digital to analog conversion
11979118 · 2024-05-07 · ·

There is provided a RF-DAC that may include (i) a first PAM that includes a first group of first power amplifiers of different amplifications, (ii) a second PAM that includes a second group of second power amplifiers of different amplifications; (iii) a load that includes an output port and a transformer; (iv) power amplifiers control units, and a transformer control unit. During a cycle of operation (i) each one of the first and second PAMs is configured to receive one or more power amplifiers digital control signals and activate a single power amplifier per each of the first and second PAMS, (ii) the transformer control unit is configured to receive a transformer digital control signal and control a transformer parameter of the transformer, and (iii) the transformer is configured to receive a first PAM output signal and a second PAM output signal, and output a transformer output signal that reflects digital information represented by the one or more power amplifiers digital control signals and the transformer digital control signal.

Power amplifier ramping and power control with forward and reverse back-gate bias

Embodiments of the present disclosure provide a circuit structure and method for power amplifier control with forward and reverse voltage biases to transistor back-gate regions. A circuit structure according to the disclosure can include: a power amplifier (PA) circuit having first and second transistors, the first and second transistors each including a back-gate region, wherein the back-gate region of each of the first and second transistors is positioned within a doped substrate separated from a semiconductor region by a buried insulator layer; and an analog voltage source coupled to the back-gate regions of the first and second transistors of the PA circuit, such that the analog voltage source alternatively supplies a forward bias voltage or a reverse bias voltage to the back-gate regions of the first and second transistors of the PA circuit to produce a continuously sloped power ramping profile.

Compensation Device for Transistors
20190198465 · 2019-06-27 ·

Devices including a transistor having a parasitic capacitance between a control terminal and a load terminal of a first type are provided. Furthermore, the devices include advantageously arranged inductances which are electromagnetically coupled to one another and are configured at least partly to compensate for an effect of the parasitic capacitance in a range around a resonant frequency.

Systems and methods for a switchless radio front end
10320441 · 2019-06-11 · ·

A radio circuit, comprises an antenna; a differential power amplifier, comprising differential transmit inputs and differential transmit outputs, configured to amplify differential transmit signals received via the differential transmit inputs and output the amplified differential transmit signals via the differential transmit outputs; a differential low noise amplifier, comprising differential receive inputs and differential receive outputs, configured to receive differential receive signals via the differential receive inputs and output amplified differential receive signals via the differential receive outputs; and a transformer comprising a primary winding and a secondary winding, the primary winding coupled with the differential transmit outputs of the power amplifier and the differential receive inputs of the low noise amplifier and the secondary winding coupled with the antenna.

POWER AMPLIFIER CIRCUIT
20190173439 · 2019-06-06 ·

The present disclosure provides an amplifier circuit that includes one or more amplifier stages, each of the one or more amplifier stages including a complementary transistor configuration. The complementary transistor configuration includes an NMOS transistor and a PMOS transistor. The NMOS transistor is electrically coupled in parallel to the PMOS transistor. The amplifier circuit further includes an output amplifier stage electrically coupled to an output of the one or more amplifier stages, the output amplifier stage including a non-complementary transistor configuration including one or more NMOS transistors or PMOS transistors.

Radio frequency phase shifter with variable input capacitance

Aspects of the disclosure relate to a radio frequency phase shifter. An example includes an amplification stage to produce an amplified voltage, the amplification stage having a first amplifier with a first input coupled to a first output of a hybrid coupler and a second amplifier with a complementary second input coupled to a complementary second output of the hybrid coupler. A vector modulation stage coupled to the amplification stage receives the amplified voltage and produces a modulated vector, the vector modulation stage has an in-phase section and a quadrature section to control the phase of the modulated vector in response to a phase control signal. A varactor coupled across the first input and the second input of the amplification stage adjusts the capacitance between the first input and the second input in response to a capacitance control signal.

BIAS CIRCUIT AND POWER AMPLIFIER CIRCUIT
20240267011 · 2024-08-08 ·

A bias circuit for a PA. A first transistor has its drain terminal and its gate terminal connected to a first circuit node and its source terminal connected to a first supply terminal, a first current source connected to the first circuit node, and a first resistor connected between the first and second circuit nodes. A second transistor receives a first component of a differential input signal to the PA at its gate terminal, has its drain terminal connected to the second circuit node and its source terminal connected to a second supply terminal, and a third transistor receives a second component of the differential input signal to the PA at its gate terminal, having its drain terminal connected to the second circuit node and its source terminal connected to a second supply terminal. The gates terminals of the second and third transistors are biased by a first voltage.

RF Phase Shifting Device
20180337658 · 2018-11-22 · ·

A device for phase shifting is disclosed, comprising an input amplifier, a biasing circuit, a first output amplifier and a second output amplifier being variable-gain amplifiers, and a quadrature hybrid coupler. The input amplifier is connected to an input port of the coupler, the first output amplifier is connected to a through port of the coupler, the second output amplifier is connected to a coupled port of the coupler, and the biasing circuit is connected to an isolated port of the coupler. The device also includes, the quadrature hybrid coupler configured to receive, at the input port, an input signal from the input amplifier, output, at the through port, a through signal, receive, at the isolated port, a bias signal from the biasing circuit, and output, at the coupled port, a coupled signal having a phase differing from a phase of the through signal.