The present invention relates to a control circuit for producing a first and second control signals in order for a clock signal to break before making delays, comprising a first and second AND gates for receiving clock signals, first and second alignment blocks that receives output signals from the first and second AND gates for providing alignment prior to transmitting the first and second control signals, and generate the first and second control signals, respectively.

The present invention relates to an improvement to a current field effect transistor and trans-impedance MOS devices based on a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. The present invention further relates to a super-saturation current field effect transistor (xiFET), having a source, a drain, a diffusion, a first gate, and a second gate terminals, in which a source channel is defined between the source and diffusion terminals, a drain channel is defined between the drain and diffusion terminals. The first gate terminal is capacitively coupled to the source channel; and the second gate terminal is capacitively coupled to said drain channel. The diffusion terminal receives a current causing change in diffused charge density throughout said source and drain channel. The xiFET provides a fundamental building block for designing various analog circuites.

The present invention relates to an improvement to a current field effect transistor and trans-impedance MOS devices based on a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. The present invention further relates to a super-saturation current field effect transistor (xiFET), having a source, a drain, a diffusion, a first gate, and a second gate terminals, in which a source channel is defined between the source and diffusion terminals, a drain channel is defined between the drain and diffusion terminals. The first gate terminal is capacitively coupled to the source channel; and the second gate terminal is capacitively coupled to said drain channel.The diffusion terminal receives a current causing change in diffused charge density throughout said source and drain channel. The xiFET provides a fundamental building block for designing various analog circuites.

Hybrid variable gain amplifiers and methods of controlling hybrid VGAs are disclosed. The hybrid VGA includes a first portion that provides a current path between a positive input and a positive output, and a current path either between the positive input and a negative output, in a first mode of operation, or between the positive input and a voltage source, in a second mode of operation. A second portion of the VGA provides a current path between a negative input and the negative output, and a current path either between the negative input and the positive output, in the first mode of operation, or between the negative input and the voltage source, in the second mode of operation. Control voltages selectively enable the paths in the first or second mode of operation. The control voltages further control amount of current flow in the enabled paths.

A first embodiment is directed to a circuit including a positive biasing circuit with a drive PMOS for biasing in subthreshold, a negative biasing circuit with a drive NMOS for biasing in subthreshold, and an amplification circuit coupled to the biasing circuits. The amplification circuit includes a first stage with a first boosting stage, a second stage with a second boosting stage, and a resistive element coupled between the first and second stages. A second embodiment is directed to a folded cascode operational amplifier wherein a value of the resistive element is selected to place at least one of a drive MOS in subthreshold. A third embodiment is directed to an integrated circuit with a resistive area neighboring a first boosting area and a second boosting area, the resistive area including a resistive element directly connected to a drive PMOS and a drive NMOS.

Hybrid variable gain amplifiers and methods of controlling hybrid VGAs are disclosed. The hybrid VGA includes a first portion that provides a current path between a positive input and a positive output, and a current path either between the positive input and a negative output, in a first mode of operation, or between the positive input and a voltage source, in a second mode of operation. A second portion of the VGA provides a current path between a negative input and the negative output, and a current path either between the negative input and the positive output, in the first mode of operation, or between the negative input and the voltage source, in the second mode of operation. Control voltages selectively enable the paths in the first or second mode of operation. The control voltages further control amount of current flow in the enabled paths.

The present invention relates to an improvement to a current field effect transistor and trans-impedance MOS devices based on a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. The present invention further relates to a super-saturation current field effect transistor (xiFET), having a source, a drain, a diffusion, a first gate, and a second gate terminals, in which a source channel is defined between the source and diffusion terminals, a drain channel is defined between the drain and diffusion terminals. The first gate terminal is capacitively coupled to the source channel; and the second gate terminal is capacitively coupled to said drain channel. The diffusion terminal receives a current causing change in diffused charge density throughout said source and drain channel. The xiFET provides a fundamental building block for designing various analog circuits.

The present invention relates to an improvement to a current field effect transistor and trans-impedance MOS devices based on a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. The present invention further relates to a super-saturation current field effect transistor (xiFET), having a source, a drain, a diffusion, a first gate, and a second gate terminals, in which a source channel is defined between the source and diffusion terminals, a drain channel is defined between the drain and diffusion terminals. The first gate terminal is capacitively coupled to the source channel; and the second gate terminal is capacitively coupled to said drain channel. The diffusion terminal receives a current causing change in diffused charge density throughout said source and drain channel. The xiFET provides a fundamental building block for designing various analog circuits.

The present invention relates to a multi-stage and feed forward compensated complimentary current field effect transistor amplifiers, enabling a charge-based approach that takes advantage of the exponential properties incurred in sub-threshold operation. A plurality of complimentary pairs of novel current field effect transistors are connected in series to form a multi-stage amplifier.

The present invention relates to a novel and inventive compound device structure for a low noise current amplifier or trans-impedance amplifier. The trans-impedance amplifier includes an amplifier portion, which converts current input into voltage using a complimentary pair of novel n-type and p-type current field-effect transistors (NiFET and PiFET) and a bias generation portion using another complimentary pair of NiFET and PiFET. Trans-impedance of NiFET and PiFET and its gain may be configured and programmed by a ratio of width (W) over length (L) of source channel over the width (W) over length (L) of drain channel (W/L of source channel/W/L of drain channel).