Patent classifications
H03F2203/45306
Active Device Which has a High Breakdown Voltage, is Memory-Less, Traps Even Harmonic Signals and Circuits Used Therewith
An active device and circuits utilized therewith are disclosed. In an aspect, the active device comprises an n-type transistor having a drain, gate and bulk and a p-type transistor having a drain, gate and bulk. The n-type transistor and the p-type transistor include a common source. The device includes a first capacitor coupled between the gate of the n-type transistor and the gate of the p-type transistor, a second capacitor coupled between the drain of the n-type transistor and the drain of p-type transistor and a third capacitor coupled between the bulk of the n-type transistor and the bulk of p-type transistor. The active device has a high breakdown voltage, is memory less and traps even harmonic signals.
Radio frequency (RF) receiver circuit
An integrated circuit includes a first high-pass filter having an input coupled to receive a first signal and an output coupled to a first input of a first differential pair of transistors. A second high-pass filter includes an input coupled to receive a second signal and an output coupled to a second input of the first differential pair of transistors. The second signal may be a complementary signal of the first signal. A second differential pair of transistors includes control electrodes coupled to a first voltage supply terminal. A boost circuit is coupled between the second differential pair of transistors and the first voltage supply terminal. A low-pass filter is coupled between the first differential pair of transistors and the second differential pair of transistors.
Transconductance amplifier and phase shifter
A transconductance amplifier is provided with: a cross-coupled differential pair (31) having one set of differential pair transistors in which signals whose polarities are opposite to each other are inputted to gates thereof, drains of one of the differential pair transistors being connected to drains of another one of the differential pair transistors, and a control circuit (32) comprised of logical circuits, for outputting a binary signal to the common source of each of the differential pair transistors on the basis of an output-level control signal and a polarity control signal which are inputted thereto.
Differential amplifier schemes for sensing memory cells
Methods, systems, and devices for differential amplifier schemes for sensing memory cells are described. In one example, a memory apparatus may include a differential amplifier having a first input node configured to be coupled with a memory cell and having an output node configured to be coupled with a sense component. In some examples, the memory apparatus may also include a capacitor having a first node coupled with the first input node, and a first switching component configured to selectively couple a second node of the capacitor with the output node. The differential amplifier may configured such that a current at the output node is proportional to a difference between a voltage at the first input node of the differential amplifier and a voltage at the second input node of the differential amplifier.
VOLTAGE-TO-CURRENT CONVERSION
The present invention relates to circuitry for voltage-to-current conversion, and in particular to differential voltage-to-current conversion circuitry. Such circuitry is operable to receive a differential voltage input signal and output a corresponding differential current signal.
Active device which has a high breakdown voltage, is memory-less, traps even harmonic signals and circuits used therewith
An active device and circuits utilized therewith are disclosed. In an aspect, the active device comprises an n-type transistor having a drain, gate and bulk and a p-type transistor having a drain, gate and bulk. The n-type transistor and the p-type transistor include a common source. The device includes a first capacitor coupled between the gate of the n-type transistor and the gale of the p-type transistor, a second capacitor coupled between the drain of the n-type transistor and the drain of p-type transistor and a third capacitor coupled between the bulk of the n-type transistor and the bulk of p-type transistor. The active device has a high breakdown voltage, is memory less and traps even harmonic signals.
Amplifier adapted for noise suppression
Systems and methods of noise suppression by an amplifier are presented. In one exemplary embodiment, an amplifier comprises first and fourth transistors configured as a first differential pair of transistors in a common-gate configuration, and second and third transistors configured as a second differential pair of transistors in a common-source configuration. The first and fourth transistors are operative to receive, from a differential input, by a source of each first and fourth transistor, a differential input signal. Further, a drain of each first and fourth transistor is coupled to respective first and second outputs configured as a differential output. The second and third transistors are operative to output, from a drain of each second and third transistor, to the respective second and first outputs, a differential output signal. Further, a gate of each second and third transistor is coupled to the respective first and second inputs.
RADIO FREQUENCY (RF) RECEIVER CIRCUIT
An integrated circuit includes a first high-pass filter having an input coupled to receive a first signal and an output coupled to a first input of a first differential pair of transistors. A second high-pass filter includes an input coupled to receive a second signal and an output coupled to a second input of the first differential pair of transistors. The second signal may be a complementary signal of the first signal. A second differential pair of transistors includes control electrodes coupled to a first voltage supply terminal. A boost circuit is coupled between the second differential pair of transistors and the first voltage supply terminal. A low-pass filter is coupled between the first differential pair of transistors and the second differential pair of transistors.
METHOD AND APPARATUS FOR AMPLIFYING SIGNALS
There are disclosed various methods and apparatuses for amplifying a signal. In some embodiments of the method a signal is provided to an input (S) of a transconducting element (T) of an amplifier. An amplified signal is formed on the basis of the input signal by the transconducting element (T). The amplified signal is provided to an output stage. A negative conductance (R.sub.neg) in the output stage is used to adjust a gain and a noise figure of the amplifier. The amplified signal is provided via a feedback element (C.sub.fb) to another input (G) of the transconducting element (T). In some embodiments the apparatus comprises means for implementing the method.
Wideband amplifier circuits and methods
An wideband amplifier circuit such as a transimpedance amplifier achieves improved amplifier and/or system performance, such as a reduced input impedance. The transimpedance amplifier may use a complementary common gate stage that receives an input signal and generates current to a current summing stage. In one instance, an input current is received by a complimentary common gate stage that includes a first common gate transistor and a second common gate transistor, each having different polarities, in which the first terminals of each of the transistors are configured to receive the input current. Each of the transistors generates an output current to a current summing stage that generates an output voltage at an output terminal. The output voltage may be based on the combined currents from the first common gate transistor and second common gate transistor.