Methods, systems, and devices for differential amplifier schemes for sensing memory cells are described. In one example, a memory apparatus may include a differential amplifier having a first input node configured to be coupled with a memory cell and having an output node configured to be coupled with a sense component. In some examples, the memory apparatus may also include a capacitor having a first node coupled with the first input node, and a first switching component configured to selectively couple a second node of the capacitor with the output node. The differential amplifier may configured such that a current at the output node is proportional to a difference between a voltage at the first input node of the differential amplifier and a voltage at the second input node of the differential amplifier.

The disclosure provides an amplifier. The amplifier includes a first transistor that receives a first input and generates a first load current. A first output node is coupled to a power supply through a first load resistor. The first load resistor receives the first load current. A first capacitor network is coupled to the first output node and draws a first capacitive current from the first output node. A first current buffer is coupled between the first output node and the first transistor. A current through the first current buffer is a summation of the first load current and the first capacitive current.

A top-plate sampling analog-to-digital converter (ADC) circuit includes a first ADC stage and a residue amplifier coupled to the first ADC stage. The residue amplifier comprises a first transistor with a control terminal, a first current terminal, and a second current terminal. The residue amplifier also comprises a second transistor with a control terminal, a first current terminal, and a second current terminal. The residue amplifier also comprises a linearity adjustment circuit coupled to a second current terminal of at least one of the first transistor and the second transistor. The linearity adjustment circuit comprises at least one switch that changes its state as a function of an input sampling phase and a gain phase of the residue amplifier.

A top-plate sampling analog-to-digital converter (ADC) circuit includes a first ADC stage and a residue amplifier coupled to the first ADC stage. The residue amplifier comprises a first transistor with a control terminal, a first current terminal, and a second current terminal. The residue amplifier also comprises a second transistor with a control terminal, a first current terminal, and a second current terminal. The residue amplifier also comprises a linearity adjustment circuit coupled to a second current terminal of at least one of the first transistor and the second transistor. The linearity adjustment circuit comprises at least one switch that changes its state as a function of an input sampling phase and a gain phase of the residue amplifier.

A voltage regulator and a power supply are provided. The voltage regulator includes an operational amplifier and an offset voltage control module. The offset voltage control module includes one or more stages of regulation branches connected in parallel, and controls an offset voltage of the operational amplifier with the one or more stages of regulation branches to regulate the output voltage. The offset voltage control module also includes a bandgap reference generation circuit, configured to generate a reference voltage irrelevant to a temperature coefficient that is received by the operational amplifier from the input terminal, wherein the bandgap reference generation circuit comprises at least one of: a V.sub.GS-based bandgap reference generation circuit having a full CMOS reference offset structure, a PTAT unit-based and V.sub.GS-based bandgap reference generation circuit having a full CMOS reference offset structure, and a PTAT unit-based and BJT-based bandgap reference generation circuit having a complementary structure.

Methods, systems, and devices for differential amplifier schemes for sensing memory cells are described. In one example, a memory apparatus may include a differential amplifier having a first input node configured to be coupled with a memory cell and having an output node configured to be coupled with a sense component. In some examples, the memory apparatus may also include a capacitor having a first node coupled with the first input node, and a first switching component configured to selectively couple a second node of the capacitor with the output node. The differential amplifier may configured such that a current at the output node is proportional to a difference between a voltage at the first input node of the differential amplifier and a voltage at the second input node of the differential amplifier.

Amplifier configuration for load-line enhancement is described herein. In some implementations, an apparatus includes an amplifier. The amplifier includes at least one plus transistor stack, at least one minus transistor stack, and at least one inductor. The at least one plus transistor stack is coupled to a plus amplifier node and a plus input node. The at least one minus transistor stack is coupled to a minus amplifier node and a minus input node. The at least one inductor is coupled between the plus amplifier node and the minus amplifier node, with the at least one inductor including an inter-inductor node. The amplifier also includes a minus power switch coupled between the minus amplifier node and one or more supply voltages and an inductor power switch coupled between the inter-inductor node and at least one supply voltage.

The disclosure provides an amplifier. The amplifier includes a first transistor that receives a first input and generates a first load current. A first output node is coupled to a power supply through a first load resistor. The first load resistor receives the first load current. A first capacitor network is coupled to the first output node and draws a first capacitive current from the first output node. A first current buffer is coupled between the first output node and the first transistor. A current through the first current buffer is a summation of the first load current and the first capacitive current.

A voltage regulator and a power supply are provided. The voltage regulator includes an operational amplifier and an offset voltage control module. The operational amplifier includes an input terminal and an output terminal, and is configured to generate an output voltage to be output from the output terminal based on a reference voltage received from the input terminal. The offset voltage control module includes one stage of regulation branch or more stages of regulation branches connected in parallel, and is configured to control an offset voltage of the operational amplifier based on selection of the regulation branch to regulate the output voltage. Since sine each stage of regulation branch in the offset voltage control module is based on a transistor structure, as compared with the voltage dividing resistor in the related art, the transistor has lower power consumption, and thus power consumption of the voltage regulator is lowered.

Methods, systems, and devices for differential amplifier schemes for sensing memory cells are described. In one example, a memory apparatus may include a differential amplifier having a first input node configured to be coupled with a memory cell and having an output node configured to be coupled with a sense component. In some examples, the memory apparatus may also include a capacitor having a first node coupled with the first input node, and a first switching component configured to selectively couple a second node of the capacitor with the output node. The differential amplifier may configured such that a current at the output node is proportional to a difference between a voltage at the first input node of the differential amplifier and a voltage at the second input node of the differential amplifier.