A switching converter includes a voltage conversion circuit providing an output voltage from an input voltage and a PWM voltage generated in response to first and second oscillating voltages. The input stage of a transconductor circuit provides an input reference current following a difference between a reference voltage and a voltage dependent on the output voltage and according to a transconductance, and an output stage for providing an output reference current from the input reference current. A phase shifter shifts an oscillating reference voltage according to the output reference current to obtain the first and second oscillating voltages. The transconductance is controlled in response to the input voltage resulting in a change of the input reference current. Compensation for that change is provided by subtracting a variable compensation current from the input reference current, where the variable compensation current is generated in response to the input voltage.

Linearity is improved in an amplifier circuit without lowering gain.

The amplifier circuit includes a transistor, a load, an impedance element, and a variable current source. The transistor amplifies an input signal. The load is connected between the transistor and a power supply. The impedance element is connected between the transistor and a ground terminal, and passes a direct current. The variable current source is connected to a connection part between the transistor and the impedance element, and supplies a current in accordance with a voltage of the connection part.

A voltage generation circuit may include: a first transistor coupled to an internal supply voltage terminal, and configured as a diode-connected transistor; a second transistor coupled to the first transistor and configured as a diode-connected transistor; and a third transistor coupled between the second transistor and a ground voltage terminal, and configured to operate according to a first reference voltage generated based on an external supply voltage. The voltage generation circuit may limit a variation in level of a second reference voltage which is generated through a drain terminal of the second transistor as a threshold voltage of the second transistor rises according to a rise in level of the internal supply voltage.

A continuous time linear equalization (CTLE) circuit is disclosed. The CTLE circuit includes an input port, an output port, a first differential transistor pair coupled to the input port and the output port and a second differential transistor pair. The CTLE circuit further includes a first degenerative impedance circuit coupled between the first differential transistor pair and ground. The first degenerative impedance includes switchable components to vary impedance of the first degenerative impedance circuit. The CTLE circuit also includes a second degenerative impedance circuit coupled between the second differential transistor pair and ground. The second degenerative impedance includes switchable components to vary impedance of the second degenerative impedance circuit, wherein the resistive part of the impedance of the first degenerative impedance circuit is equal to the impedance of the second degenerative impedance circuit.

Embodiments of improved CMOS input stage circuits and related methods are provided herein to maintain a near constant transconductance across an entire common-mode input voltage range of the input stage. One embodiment includes a pair of NMOS input transistors and a pair of PMOS input transistors, each coupled to receive a differential input voltages at their gate terminals; a current source coupled to source terminals of the pair of PMOS input transistors and configured to generate a current; a current steering circuit configured to steer the current to the pair of NMOS input transistors and/or to the pair of PMOS input transistors, depending on whether a common mode input voltage (CMV) is greater than, less than, or substantially equal to a cross-over voltage; and a current stealing circuit configured to reduce the current when the CMV is substantially equal to the cross-over voltage.

Embodiments of improved CMOS input stage circuits and related methods are provided herein to maintain a near constant transconductance across an entire common-mode input voltage range of the input stage. One embodiment includes a pair of NMOS input transistors and a pair of PMOS input transistors, each coupled to receive a differential input voltages at their gate terminals; a current source coupled to source terminals of the pair of PMOS input transistors and configured to generate a current; a current steering circuit configured to steer the current to the pair of NMOS input transistors and/or to the pair of PMOS input transistors, depending on whether a common mode input voltage (CMV) is greater than, less than, or substantially equal to a cross-over voltage; and a current stealing circuit configured to reduce the current when the CMV is substantially equal to the cross-over voltage.

Apparatus and associated methods relate to maintaining a total current of a switch cell in a digital-to-analog converter at a controllable operating point by adjusting shunt current control signals applied to programmable shunt current sources in opposite polarity with respect to a tail current control signal applied to a programmable tail current source. In an illustrative example, the total current may flow through differential legs of a switch cell. The programmable shunt current sources may, for example, be configured to compensate for adjustments to the programmable tail current source. In an illustrative example, tail current and shunt currents may flow through a pair of cascode transistors. In various examples, controlling the programmable shunt current sources to compensate adjustments to the tail current source may, for example, permit controlled common mode voltage or operating point so as to reduce device voltage stress over a wider dynamic range of output voltages.

Provided are a semiconductor memory device and a memory system including the same. The semiconductor memory device includes an external power supply voltage terminal configured to receive an external power supply voltage, an external ground voltage terminal configured to receive an external ground voltage, a ground voltage noise detector configured to detect a difference between the external ground voltage and an internal ground voltage of an internal ground voltage node and generate a ground voltage noise reference voltage, an internal power supply voltage reference voltage generator configured to generate an internal power supply voltage reference voltage based on the external power supply voltage and the ground voltage noise reference voltage, and an internal power supply voltage driver configured to generate an internal power supply voltage based on the internal power supply voltage reference voltage.

Provided are a semiconductor memory device and a memory system including the same. The semiconductor memory device includes an external power supply voltage terminal configured to receive an external power supply voltage, an external ground voltage terminal configured to receive an external ground voltage, a ground voltage noise detector configured to detect a difference between the external ground voltage and an internal ground voltage of an internal ground voltage node and generate a ground voltage noise reference voltage, an internal power supply voltage reference voltage generator configured to generate an internal power supply voltage reference voltage based on the external power supply voltage and the ground voltage noise reference voltage, and an internal power supply voltage driver configured to generate an internal power supply voltage based on the internal power supply voltage reference voltage.

A differential amplifier circuit includes: a control current source supplying a control current; paired bipolar transistors; an a variable resistance circuit including: a series circuit of a first resistor and a second resistor having an identical resistance, the series circuit electrically connected between a first terminal and a second terminal of the variable resistance circuit; a first field effect transistor (FET) having a source and a drain being electrically connected to emitters of the paired bipolar transistors, respectively; and a second FET having a drain, a gate being electrically connected to the drain thereof, the gate of the first FET, and a control terminal of variable resistance circuit, a source being electrically connected to a connection node between the first resistor and the second resistor, wherein the control current source adjusts the control current to allow transconductance of the second FET to be kept constant.