In an embodiment, a differential buffer may include a first input stage that compares a non-inverting portion of an input signal alternately to a non-inverting portion of an output and to an inverting portion of the output. Another embodiment of the differential buffer may also include a second input stage that compares the inverting portion of the input signal alternately to the inverting portion of the output signal and to the non-inverting portion of the output signal. Other embodiments of the differential buffer may include a feedback chopper switch that transfers the non-inverting portion of the output signal and the inverting portion of the output signal to the first input stage and to the second input stage.

A novel semiconductor device with high convenience or high reliability is provided. The semiconductor device includes an arithmetic logic unit and an amplifier. The arithmetic logic unit is configured to generate second data on the basis of an offset adjustment signal or offset data and first data. The amplifier includes an operational amplifier and an offset adjustment circuit including a register. The operational amplifier supplies a predetermined voltage to a node on the basis of a voltage between a first terminal and a second terminal. The register is configured to retain, as the offset data, the offset adjustment signal on the basis of a latch signal. The register is configured to allow the supplied offset adjustment signal to pass therethrough in a passage state and supply the offset adjustment signal. The register is configured to supply the offset data in a non-passage state.

Embodiments of the present application provide a readout circuit, an image sensor and an electronic device, which could effectively reduce an area and power consumption of the image sensor. The readout circuit includes a plurality of capacitors, a switch circuit and an output circuit; where the plurality of capacitors are connected to the output circuit through the switch circuit; the plurality of capacitors are configured to store output signals of a plurality of pixel circuits, respectively; and the output circuit is configured to output signals stored by the plurality of capacitors through the switch circuit one-by-one.

A current sensor including a voltage generation circuit and a voltage integration circuit is provided. The voltage generation circuit is configured to generate a first voltage according to a current to be sensed. The voltage integration circuit is coupled to the voltage generation circuit and configured to receive the first voltage and a second voltage to generate an output voltage. The voltage integration circuit includes a first amplifier, a second amplifier and a first capacitor. The first amplifier is configured to receive the first voltage and the second voltage to generate a third voltage. The second amplifier is coupled to the first amplifier and configured to receive the third voltage to generate the output voltage. The first capacitor is coupled between an output terminal of the voltage generation circuit and an output terminal of the first amplifier and configured to reduce a voltage difference between the first voltage and the second voltage.

The present disclosure relates to a semiconductor device and a cell potential measuring apparatus capable of amplifying and reading a potential of solution with high accuracy. A reading electrode reads the potential of the solution. A differential amplifier includes a current mirror circuit. The reading electrode is connected to a first input terminal of the differential amplifier which is connected to a gate of a first input transistor connected to a diode-connected pMOS transistor of the current mirror circuit. An output terminal of the differential amplifier is connected to a second input terminal of the differential amplifier, which is connected to a gate of a second input transistor connected to a pMOS transistor of the current mirror circuit which is not diode-connected, via a capacitor. For example, the present disclosure is applied to the cell potential measuring apparatus and the like.

A controlled active resistance. The active resistance is implemented on an integrated circuit. In some embodiments, the active resistance includes a MOSFET. In alternate embodiments, the active resistance includes a MOSFET and a resistor. The control for the active resistance includes a reference resistor and an operational amplifier. The control for the active resistance further includes two current sources: i) a current source producing a current that is proportional to absolute temperature, and ii) another current source that is produced by a bandgap voltage reference. In one aspect, the active resistance generates an effective resistance that is proportional to thermal voltage. In another aspect, the active resistance generates an effective resistance that is proportional to inverse of the thermal voltage. In an alternate aspect, the current sources have various dependencies, and the active resistance generates an effective resistance that is proportional to those dependencies.

An electronic circuit for a micro-electro-mechanical systems gyroscope is disclosed. The electronic circuit includes a current buffer, a transimpedance amplifier coupled with the current buffer, and a plurality of transistors. An inverting input terminal of the current buffer and a non-inverting input terminal of the current buffer are connected with a plurality of first resistors. The inverting input terminal of the current buffer is connected with a source of one of the plurality of transistors, and the non-inverting input terminal of the current buffer is connected with a source of another one of the plurality of transistors. The plurality of first resistors are connected to a ground. The current buffer is configured to isolate a load in the micro-electro-mechanical systems gyroscope from the transimpedance amplifier.

To provide a semiconductor device that makes it possible to reduce a cell circuit area and an increase in resolution. There is provided a semiconductor device including: a first region in which readout cells are arranged in an array form, the readout cells having one of input transistors included in a differential amplifier: and a second region in which reference cells are arranged in an array form, the reference cells having another input transistor included in the differential amplifier, the first region and the second region being separated from each other.

A pixel circuit includes a differential amplifier. The differential amplifier includes a non-inverting input terminal, an inverting input terminal, and an output terminal. The differential amplifier includes an input differential pair including first and second NMOS transistors, a current mirror pair including PMOS transistors, and a constant current source including a fifth NMOS transistor. A threshold voltage of each of the first and second NMOS transistors is higher than a threshold voltage of the fifth NMOS transistor. Further, the threshold voltage of each of the first and second NMOS transistors is higher than a threshold voltage of another NMOS transistor.

A controlled active resistance. The active resistance is implemented on an integrated circuit. In some embodiments, the active resistance includes a MOSFET. In alternate embodiments, the active resistance includes a MOSFET and a resistor. The control for the active resistance includes a reference resistor and an operational amplifier. The control for the active resistance further includes two current sources: i) a current source producing a current that is proportional to absolute temperature, and ii) another current source that is produced by a bandgap voltage reference. In one aspect, the active resistance generates an effective resistance that is proportional to thermal voltage. In another aspect, the active resistance generates an effective resistance that is proportional to inverse of the thermal voltage. In an alternate aspect, the current sources have various dependencies, and the active resistance generates an effective resistance that is proportional to those dependencies.