An RF amplifier for implementation in SiGe HBT technology is described. The RF amplifier has a cascode stage comprising a common base (CB) transistor and a common emitter (CE) transistor arranged in series between a first voltage rail and a second voltage rail. An RF input is coupled to the base of the CE transistor and an RF output is coupled to the collector of the CB transistor. The RF amplifier includes a CB power-down circuit arranged between the base of the CB transistor and the second voltage rail and a CE power-down circuit arranged between the base of the CE transistor and the second voltage rail. In a power-down mode the CE power-down circuit couples the base of the common-emitter-transistor to the second voltage rail. The CB power-down mode circuit couples the base of the CB transistor to the second voltage rail via a high-ohmic path.

According to an embodiment, a semiconductor device includes a radio-frequency amplifier circuit, a first switch, a second switch, and a third switch. The first switch is coupled between a first node and an input end of the radio-frequency amplifier circuit. The second switch is coupled between the first node and an output end of the radio-frequency amplifier circuit. The third switch is coupled between the first node and a reference potential node. A control end of the third switch is coupled to one of the first node and the reference potential node.

Apparatus and methods for LNAs with mid-node impedance networks are provided herein. In certain configurations, an LNA includes a mid-node impedance circuit including a resistor and a capacitor electrically connected in parallel, a cascode device electrically connected between an output terminal and the mid-node impedance circuit, and a transconductance device electrically connected between the mid-node impedance circuit and ground. The transconductance device amplifies a radio frequency signal received from an input terminal. The LNA further includes a feedback bias circuit electrically connected between the output terminal and the input terminal and operable to control an input bias voltage of the transconductance device.

An amplification circuit includes a switch circuit, an amplifier, and a control circuit. The switch circuit has a first terminal coupled to a radio frequency signal input terminal or a system voltage terminal, a second terminal coupled to an input terminal of the amplifier, and a control terminal configured to receive a control signal. The amplifier amplifies a radio frequency signal. The control circuit generates the control signal according to a driving current generated by the amplifier. When the control circuit determines that the amplifier operates in a high power mode, the control circuit controls the control signal to adjust a conducting level between the first terminal and the second terminal of the switch circuit according to the intensity of the driving current.

A power amplification circuit includes first wiring supplied with a first signal having a first frequency, second wiring supplied with a second signal having a second frequency that differs from the first frequency, a first amplification circuit that amplifies the first signal supplied through the first wiring and supplies a first amplified signal to the second wiring, and a second amplification circuit that amplifies the signal supplied through the second wiring and outputs a second amplified signal.

Radio frequency (RF) amplifiers with overload protection are provided herein. In certain configurations, an RF amplifier system includes an RF amplifier that receives an RF signal from an input terminal. The RF amplifier includes an amplification field-effect transistor (FET) having a gate that receives the RF signal, and a degeneration circuit connected between a source of the amplifier FET and a ground voltage. The RF amplifier system further includes an electrostatic discharge protection circuit including a plurality of protection diodes electrically connected in series between the input terminal and the ground voltage, and a detector having an input connected along an electrical path through the plurality of protection diodes and an output that generates a detection signal operable to control an amount of degeneration provided by the degeneration circuit.

Chopper amplifiers with tracking of multiple input offsets are disclosed herein. In certain embodiments, a chopper amplifier includes chopper amplifier circuitry including an input chopping circuit, an amplification circuit, and an output chopping circuit electrically connected along a signal path. The amplification circuit includes two or more pairs of input transistors, from which a control circuit chooses a selected pair of input transistors to amplify an input signal. The chopper amplifier further incudes an offset correction circuit that senses the signal path to generate an input offset compensation signal for the amplification circuit. Furthermore, the offset correction circuit separately tracks an input offset of each of the two or more pairs of input transistors.

A receiver circuit is disclosed. The receiver circuit includes an amplifier configured to generate an RF signal based on a received signal, where the RF signal includes an information signal and a blocker signal modulating an RF carrier frequency. The receiver circuit also includes an RF filter connected to the amplifier, where the RF filter is configured to selectively attenuate the blocker signal.

In electronic circuits having various gain states, small gain phase shift differences required among various gain states may pose a challenging problem. The disclosed methods and devices provide solution to such challenge. Electronic circuits are described wherein a first path including an amplifier may be bypassed by a second path including only passive elements and for gain states smaller than 0 dB. In such electronic circuits, a phase shifter included in the second path can be adjusted to address the required phase shift among various gain states.

The present disclosure relates to a switchable power amplification structure including a first power amplifier (PA), a second PA, a front switching structure, and an end switching structure. The front switching structure is coupled to a radio frequency (RF) input port, and the end switching structure is coupled to an antenna port. Herein, the first PA and the second PA are parallel to each other, each of which is coupled between the front switching structure and the first end switching structure. The front switching structure is configured to selectively couple the first PA and the second PA to the RF input port, while the end switching structure is configured to selectively couple the first PA and the second PA to the first antenna port.