A method for use in an electronic device having an amplification unit, the method comprising: detecting a current temperature of the electronic device when the amplification unit is in a first state in which the amplification unit is operated in accordance with first control value; detecting whether the current temperature meets a threshold; identifying a second control value that is lower than the first control value, when the current temperature meets the threshold; and changing an amount of power supplied to the amplification unit by transitioning the amplification unit into a second state in which the amplification unit is operated in accordance with the second control value.

A bias circuit provides additional bias current for power amplifiers during data bursts to compensate for the gain droop caused by a rise in the power amplifier temperature during the data burst. A bias circuit includes a difference amplifier and switches coupled to the difference amplifier. The switches operate the bias circuit in a first mode when a transmit data burst is detected and operate the bias circuit in a second mode after the bias circuit has operated in the first mode for a predetermined period of time. In the first mode, the bias circuit charges a storage capacitor and sets an output current to zero. In the second mode, the bias circuit outputs the output current that increases above the initial value of zero as the PA warms up, where the excursion of this increase of current is determined by a register. The switches disable the bias circuit when the transmit data burst ends.

A matching network circuit and an associated apparatus are provided. The matching network circuit includes a matching unit coupled between a common path port and a first path port of the matching network circuit, and an impedance unit coupled between the common path port and a second path port of the matching network circuit. The common path port is utilized for connecting the matching network circuit to a common path, the first path port is utilized for connecting the matching network circuit to a first device on a first path, and the second path port is utilized for connecting the matching network circuit to a second device on a second path. The matching unit is arranged for performing impedance matching between the common path port and the first path port, and the impedance unit is arranged for performing impedance matching between the common path port and the second path port.

Circuits for power-combined power amplifier array are provided, the circuits comprising: an input splitter coupled to an input that provides a plurality of outputs; a plurality of power amplifier unit cells, each power amplifier unit cell coupled to a corresponding output of the input splitter and each power amplifier unit cell providing an output signal at an output of the power amplifier unit cell; and a power combiner having an output, a plurality of inputs, each input coupled to the output of a corresponding power amplifier unit cell, and a plurality of C-L-C-section equivalents, each having an input connected to a corresponding one of the plurality of inputs of the power combiner and an output connected to the output of the power combiner.

An amplifying circuit includes a first reconfigurable amplifier configured to selectively operate in a cascode mode or a non-cascode mode, wherein an input of the first reconfigurable amplifier is coupled to a first input of the amplifying circuit, and an output of the first reconfigurable amplifier is coupled to an output of the amplifying circuit. The amplifying circuit also includes a second reconfigurable amplifier configured to selectively operate in the cascode mode or the non-cascode mode, wherein an input of the second reconfigurable amplifier is coupled to a second input of the amplifying circuit, and an output of the second reconfigurable amplifier is coupled to the output of the amplifying circuit.

An amplifier includes a power amplifier that amplifies an input signal, a VI detection circuit that is connected to a rear stage of the power amplifier to detect power of an output signal of the power amplifier, and a controller that turns on the power amplifier when the input signal is inputted to the power amplifier, turns off the power amplifier when the input signal is not inputted to the power amplifier, and turns on the power amplifier when the VI detection circuit detects a voltage that exceeds a predetermined value when the power amplifier is in off state.

A semiconductor device is provided. The semiconductor device comprises an output terminal from which an output voltage is output, a switching converter configured to control the output voltage on the basis of a first reference voltage, a load capacitor configured to be charged with a voltage corresponding to the output voltage, a linear amplifier connected to one end of an alternating current (AC) coupling capacitor and configured to control a voltage of the AC coupling capacitor on the basis of a second reference voltage, and a switching circuit configured to control a charging speed of the load capacitor and control a connection between the output terminal and one end and another end of the AC coupling capacitor.

A bias circuit provides additional bias current for power amplifiers during data bursts to compensate for the gain droop caused by a rise in the power amplifier temperature during the data burst. A bias circuit includes a difference amplifier and switches coupled to the difference amplifier. The switches operate the bias circuit in a first mode when a transmit data burst is detected and operate the bias circuit in a second mode after the bias circuit has operated in the first mode for a predetermined period of time. In the first mode, the bias circuit charges a storage capacitor and sets an output current to zero. In the second mode, the bias circuit outputs the output current that increases above the initial value of zero as the PA warms up, where the excursion of this increase of current is determined by a register. The switches disable the bias circuit when the transmit data burst ends.

A semiconductor device includes a differential amplification circuit that outputs differential output signals Vo1 and Vo2, external output terminals PD1 and PD2 to which one of the differential output signals Vo1 and Vo2 and single end signals Vo3 and Vo4 is selectively supplied, switch units SW1 and SW2 that control a conduction state between the external output terminal PD1 and the feedback line and a conduction state between the external output terminal PD2 and the feedback line, respectively, resistance elements R1 and R2 respectively provided in series with the switch units SW1 and SW2, a CMFB circuit that controls a common mode voltage of the differential amplification circuit according to a difference between an intermediate voltage Vcm of the external output terminals PD1 and PD2 in the feedback line and a reference voltage Vref, and a switch unit SW3 that controls to supply a clamp voltage to the feedback line.

An amplifying circuit includes a first reconfigurable amplifier configured to selectively operate in a cascode mode or a non-cascode mode, wherein an input of the first reconfigurable amplifier is coupled to a first input of the amplifying circuit, and an output of the first reconfigurable amplifier is coupled to an output of the amplifying circuit. The amplifying circuit also includes a second reconfigurable amplifier configured to selectively operate in the cascode mode or the non-cascode mode, wherein an input of the second reconfigurable amplifier is coupled to a second input of the amplifying circuit, and an output of the second reconfigurable amplifier is coupled to the output of the amplifying circuit.