An impedance matching circuit for an amplifier can include a first coil and a second coil configured as an autotransformer. A first end of the first coil can be configured to connect to a voltage source for the amplifier, and a second end of the first coil can be connected to an output of the amplifier. A first end of the second coil can be connected to the second end of the first coil, and a second end of the second coil can be connected to an output node. The impedance matching circuit can also include a capacitor connected to the second end of the first coil.

According to an aspect of present disclosure, a phase shifter for providing a desired phase shift to a very high frequency signal fabricated as part of the an integrated circuit comprises a first coil segment and a second coil segment together forming an inductor of first inductance value, a first capacitor of first capacitance value electrically connected parallel the inductor, a second capacitor of second capacitance value electrically connected between the first coil segment and the second coil segment and a resistor of a first resistance value electrically connected parallel to the second capacitor, in that, the inductor, first capacitor, second capacitor and the resistor together operative as a phase shifter such that when a input signal of a first frequency is presented across the first capacitor, the output signal across the resistor is phase shifted version of the input signal shifted in phase by a first angle.

An IC includes an RC filter, a doped layer under a first dielectric layer, a polysilicon layer on the first dielectric layer providing a polysilicon plate for a capacitor of the filter, and gate(s) for MOSFET(s). A second dielectric layer is on the polysilicon plate. An input contact is on one end of the polysilicon plate and an output contact is on the opposite end. A metal layer includes metal providing contact to at least input contact and metal providing contact to the output contact. Analog circuitry includes the MOSFET having an I/O node coupled to the RC filter.

A filter component having an ESD protection function that includes a mounting inductor component and a base board. An ESD protection element and a capacitor are formed in the base board, which includes a semiconductor substrate, and front and back rewiring layers. First and second mounting component connection terminal conductors to which the mounting inductor component is connected are formed on an outer surface of the front rewiring layer. Moreover, a first, second and third external connection terminal conductors are formed on an outer surface of the back rewiring layer. The ESD protection element is formed in the semiconductor substrate and the capacitor is formed in one of the front rewiring layer or the back rewiring layer.

A filter includes a circuit including a resistor, a positive capacitor, and a negative capacitor connected in series to accept the same current. The filter also includes an input terminal to accept an input voltage across the circuit and an output terminal to deliver an output voltage taken across the resistor or the positive capacitor.

High aspect ratio passive electrical components are presented formed from a single-piece silicon (Si) substrate having a textured surface with at least one high aspect ratio structure. The high aspect ratio structure includes a Si core having a width (C.sub.X), a height (C.sub.Z), and a minimum aspect ratio of C.sub.Z-to-C.sub.X of at least 5:1. An electrical conductor layer overlies the Si core. The electrical component may be a capacitor, inductor, or transmission line. In the case of a capacitor, the substrate textured first surface is made up of a plurality of adjacent high aspect ratio conductor-dielectric-Si (CDS) structures. Each CDS structure includes: a Si core, a dielectric layer overlying the Si core, and an electrical conductor layer overlying the dielectric layer. The Si cores may be formed in the geometry of parallel ridges, columns, or as a honeycomb. Each Si core comprises at least 90% of the CDS structure height.

Impedance matching circuit for radio-frequency amplifier. In some embodiments, an impedance matching circuit can include a primary metal trace having a first end configured to be capable of being coupled to a voltage source for the power amplifier, and a second end configured to be capable of being coupled to an output of the power amplifier. The impedance matching circuit can further include a secondary metal trace having first end coupled to the second end of the primary metal trace, and a second end configured to be capable of being coupled to an output node. The impedance matching circuit can further include a capacitance implemented between the first and second ends of the secondary metal trace, and be configured to trap a harmonic associated with an amplified signal at the output of the power amplifier.

An integrated device that includes a substrate, a first interconnect over the substrate and a second interconnect comprising a first portion and a second portion. The integrated device further comprising a first dielectric layer between the first interconnect and the first portion of the second interconnect such that the first interconnect vertically overlaps with the first dielectric layer and the first portion of the second interconnect. The integrated device also includes a second dielectric layer formed over the substrate. The first interconnect, the first dielectric layer and the first portion of the second interconnect are configured to operate as a capacitor. The first portion and the second portion of the second interconnect are configured to operate as an inductor.

Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure can include an epitaxial crystalline rare earth oxide (REO) layer over a substrate, a first epitaxial electrode layer over the crystalline REO layer, and an epitaxial piezoelectric layer over the first epitaxial electrode layer. The layer structure can further include a second electrode layer over the epitaxial piezoelectric layer. The first electrode layer can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).

An inductor device includes a first trace, a second trace, and a capacitor. The first trace includes at least two sub-traces. One terminal of each of the at least two sub-traces are coupled to each other at a first node. The second trace includes at least two sub-traces. One terminal of each of the at least two sub-traces are coupled to each other at a second node. The capacitor is coupled to the firs node and the second node.