A bulk acoustic wave resonator includes a substrate, a lower electrode connection member, a lower electrode, a piezoelectric layer, an upper electrode, an upper electrode connection member, and a dielectric layer in which the lower electrode, the piezoelectric layer, and the upper electrode are embedded. The lower electrode, the piezoelectric layer, and the upper electrode constitute a resonant portion. An extension portion extends away from either the lower electrode or the upper electrode to protrude outwardly from the resonant portion. A capacitor portion is constituted by the extension portion, a portion of the upper electrode connection member disposed above the extension portion, and a portion of the dielectric layer disposed between the extension portion and the portion of the upper electrode connection member disposed above the extension portion.

A component (B) is specified which comprises a functional structure (FS) on a carrier (TR) that is spanned by a thin-layer covering (DSA) resting on said carrier. A first wiring layer (VE1) is applied onto or in the thin-layer covering and comprises structured conductor traces that are connected with the functional structure.

A bulk acoustic resonator architecture is fabricated by epitaxially forming a piezoelectric film on a top surface of post formed from an underlying substrate. In some cases, the acoustic resonator is fabricated to filter multiple frequencies. In some such cases, the resonator device includes two different resonator structures on a single substrate, each resonator structure configured to filter a desired frequency. Including two different acoustic resonators in a single RF acoustic resonator device enables that single device to filter two different frequencies in a relatively small footprint.

A method of designing an acoustic microwave filter comprises generating a proposed filter circuit design having an acoustic resonant element with a defined admittance value, introducing a lumped capacitive element in parallel and a lumped inductive element in series with the resonant element, selecting a first capacitance value for the capacitive element and a first inductance value for the inductive element, thereby creating a first temperature modeled filter circuit design, simulating the first temperature modeled filter circuit design at a first operating temperature, thereby generating a first frequency response, selecting a second capacitance value for the capacitive element and a second inductance value for the inductive element, thereby creating a second temperature modeled filter circuit design, simulating the second temperature modeled filter circuit design at a second operating temperature, thereby generating a second frequency response, and comparing the first and second frequency responses to the frequency response requirements.

A bulk acoustic wave resonator includes a substrate, a lower electrode connection member, a lower electrode, a piezoelectric layer, an upper electrode, an upper electrode connection member, and a dielectric layer in which the lower electrode, the piezoelectric layer, and the upper electrode are embedded. The lower electrode, the piezoelectric layer, and the upper electrode constitute a resonant portion. An extension portion extends away from either the lower electrode or the upper electrode to protrude outwardly from the resonant portion. A capacitor portion is constituted by the extension portion, a portion of the upper electrode connection member disposed above the extension portion, and a portion of the dielectric layer disposed between the extension portion and the portion of the upper electrode connection member disposed above the extension portion.

An electronic component includes: a substrate; a device chip, in which a functional element is located on a lower surface thereof, that is mounted on an upper surface of the substrate so that the functional element and the upper surface of the substrate are opposite to each other via an air gap; a ring-shaped metal layer that is located on the upper surface of the substrate, surrounds the device chip in a plan view, and has a protruding part located along an outer periphery thereof, an outer side surface of the ring-shaped metal layer being higher than an inner side surface thereof; a metal sealer that surrounds the device chip in the plan view, and is bonded on an upper surface of the ring-shaped metal layer; and a metal film that is located on side surfaces of the metal sealer and the ring-shaped metal layer.

Embodiments of resonator circuits and modulating resonators and are described generally herein. One or more acoustic wave resonators may be coupled in series or parallel to generate tunable filters. One or more acoustic wave resonances may be modulated by one or more capacitors or tunable capacitors. One or more acoustic wave modules may also be switchable in a filter. Other embodiments may be described and claimed.

An acoustic wave filter component can include an acoustic wave device including a multi-layer piezoelectric substrate. The multi-layer piezoelectric substrate can include at least a support substrate and a piezoelectric layer. The acoustic wave device can include an interdigital transducer electrode on the piezoelectric layer. An additional layer can be located over the interdigital transducer electrode. The acoustic wave filter component can also include a bulk acoustic wave resonator supported by the additional layer. The acoustic wave device can be a boundary wave resonator, and one or more boundary wave resonators may be provided in a stacked arrangement, with the bulk acoustic wave resonator in the top layer of the stacked arrangement. The acoustic wave device can also be a temperature-compensated surface acoustic wave device.

Provided is a method for manufacturing a surface acoustic wave apparatus that can reduce degradation of electric characteristics and also reduce the number of manufacturing processes. The method for manufacturing a surface acoustic wave apparatus includes the steps of: forming an IDT electrode on an upper surface of a piezoelectric substrate, forming a frame member surrounding a formation area in which the IDT electrode is formed on the piezoelectric substrate, and mounting a film-shaped lid member on the upper surface of the frame member so as to be joined to the frame member so that a protective cover, used for covering the formation area and for providing a tightly-closed space between it and the formation area, is formed.

A method of designing an acoustic microwave filter comprises generating a proposed filter circuit design having an acoustic resonant element with a defined admittance value, introducing a lumped capacitive element in parallel and a lumped inductive element in series with the resonant element, selecting a first capacitance value for the capacitive element and a first inductance value for the inductive element, thereby creating a first temperature modeled filter circuit design, simulating the first temperature modeled filter circuit design at a first operating temperature, thereby generating a first frequency response, selecting a second capacitance value for the capacitive element and a second inductance value for the inductive element, thereby creating a second temperature modeled filter circuit design, simulating the second temperature modeled filter circuit design at a second operating temperature, thereby generating a second frequency response, and comparing the first and second frequency responses to the frequency response requirements.