A manufacturing method is provided for a resonance device that includes preparing a collective board including first power supply terminals electrically connected to upper electrodes of a plurality of resonators, and a first coupling wire that electrically connects two or more of the first power supply terminals. The method includes dividing the collective board into a plurality of resonance devices. Moreover, the first power supply terminals include a first metal layer and a second metal layer covering the first metal layer. The first coupling wire includes a portion of the first metal layer that extends from a region covered with the second metal layer. The method further includes removing the portion of the first metal layer extending from the region covered with the second metal layer before the dividing the collective board into the plurality of resonance devices.

A method for manufacturing a vibration element includes: a first dry etching step of dry etching the quartz crystal substrate from a first surface and forming first grooves and contours of a first vibrating arm and a second vibrating arm on the first surface; and a second dry etching step of dry etching the quartz crystal substrate from a second surface side and forming second grooves and contours of the first vibrating arm and the second vibrating arm on the second surface, in which Wa/Aa<1 in at least one of the first and second dry etching steps, Wa is a depth of the first and second grooves formed in the first and second dry etching steps, and Aa is a depth of the contours formed in the first and second dry etching steps.

A method for manufacturing a vibration element includes: a first dry etching step of dry etching the quartz crystal substrate from a first surface and forming first grooves and contours of a first vibrating arm and a second vibrating arm on the first surface; and a second dry etching step of dry etching the quartz crystal substrate from a second surface side and forming second grooves and contours of the first vibrating arm and the second vibrating arm on the second surface, in which Wa/Aa<1 in at least one of the first and second dry etching steps, Wa is a depth of the first and second grooves formed in the first and second dry etching steps, and Aa is a depth of the contours formed in the first and second dry etching steps.

A method for manufacturing a vibration element includes: a preparing step of preparing a quartz crystal substrate having a first surface and a second surface; a protective film forming step of forming a protective film on the first surface of the quartz crystal substrate, excluding groove forming regions where grooves are formed and an inter-arm region located between a first vibrating arm forming region where a first vibrating arm is formed and a second vibrating arm forming region where a second vibrating arm is formed; and a dry etching step of dry etching the quartz crystal substrate from a first surface side via the protective film and forming the grooves and contours of the first vibrating arm and the second vibrating arm. Wa/Aa<1, wherein Wa indicates a depth of the grooves formed in the dry etching step, and Aa indicates a depth of the contours.

A method for manufacturing a vibration element includes: a preparing step of preparing a quartz crystal substrate having a first surface and a second surface; a protective film forming step of forming a protective film on the first surface of the quartz crystal substrate, excluding groove forming regions where grooves are formed and an inter-arm region located between a first vibrating arm forming region where a first vibrating arm is formed and a second vibrating arm forming region where a second vibrating arm is formed; and a dry etching step of dry etching the quartz crystal substrate from a first surface side via the protective film and forming the grooves and contours of the first vibrating arm and the second vibrating arm. Wa/Aa<1, wherein Wa indicates a depth of the grooves formed in the dry etching step, and Aa indicates a depth of the contours.

A method of manufacturing a quartz crystal element includes the steps of preparing a quartz crystal wafer which has a predetermined cutting angle with respect to a crystal axis of a quartz crystal, and which has a first surface and a second surface having an obverse-reverse relationship, forming a first resist film on the first surface, the first resist film having a first tilted part tilted with respect to the first surface, and being dry-etched together with the quartz crystal, forming a first tilted surface tilted with respect to the first surface by dry-etching the quartz crystal wafer from the first surface side, forming a second resist film on the second surface, the second resist film having a second tilted part tilted with respect to the second surface, and being dry-etched together with the quartz crystal, and forming a second tilted surface tilted with respect to the second surface by dry-etching the quartz crystal wafer from the second surface side, wherein the quartz crystal element which is provided with the first tilted surface and the second tilted surface, and which has a cutting angle different from the predetermined cutting angle is formed.

A method of manufacturing a quartz crystal element includes the steps of preparing a quartz crystal wafer which has a predetermined cutting angle with respect to a crystal axis of a quartz crystal, and which has a first surface and a second surface having an obverse-reverse relationship, forming a first resist film on the first surface, the first resist film having a first tilted part tilted with respect to the first surface, and being dry-etched together with the quartz crystal, forming a first tilted surface tilted with respect to the first surface by dry-etching the quartz crystal wafer from the first surface side, forming a second resist film on the second surface, the second resist film having a second tilted part tilted with respect to the second surface, and being dry-etched together with the quartz crystal, and forming a second tilted surface tilted with respect to the second surface by dry-etching the quartz crystal wafer from the second surface side, wherein the quartz crystal element which is provided with the first tilted surface and the second tilted surface, and which has a cutting angle different from the predetermined cutting angle is formed.

Embodiments of the present disclosure can include a method for frequency trimming a microelectromechanical resonator, the resonator comprising a substrate and a plurality of loading elements layered on a surface of the substrate, the method comprising: selecting a first loading element of the plurality of loading elements, the first loading element being layered on a surface of a region of interest of the substrate; heating the first loading element and substrate within the region of interest to a predetermined temperature using an optical energy source, causing the first loading element to diffuse into the substrate; and cooling the region of interest to form a eutectic composition layer bonding the loading element and the substrate within the region of interest.

Embodiments of the present disclosure can include a method for frequency trimming a microelectromechanical resonator, the resonator comprising a substrate and a plurality of loading elements layered on a surface of the substrate, the method comprising: selecting a first loading element of the plurality of loading elements, the first loading element being layered on a surface of a region of interest of the substrate; heating the first loading element and substrate within the region of interest to a predetermined temperature using an optical energy source, causing the first loading element to diffuse into the substrate; and cooling the region of interest to form a eutectic composition layer bonding the loading element and the substrate within the region of interest.

A resonator comprising a magnetoelastic body having a mass load portion and an active resonating portion can be used in implementations such as a security tag. The resonator includes a mass at the mass load portion of the magnetoelastic body. Displacement of the magnetoelastic body is configured to occur at both the mass load portion and the active resonating portion. A strain at the active resonating portion during displacement is configured to be greater than a strain at the mass load portion during displacement.