Patent classifications
H03H3/013
Temperature compensation and operational configuration for bulk acoustic wave resonator devices
Operational configuration and temperature compensation methods are provided for bulk acoustic wave (BAW) resonator devices suitable for operating with liquids. Temperature compensation methods dispense with a need for temperature sensing, instead utilizing a relationship between (i) change in frequency of a BAW resonator at a phase with adequate sensitivity and (ii) change in frequency of a phase that is correlated to temperature. Operational configuration methods include determination of an initial phase response of a BAW resonator in which temperature coefficient of frequency is zero, followed by comparison of sensitivity to a level of detection threshold for a phenomenon of interest.
Temperature compensation and operational configuration for bulk acoustic wave resonator devices
Operational configuration and temperature compensation methods are provided for bulk acoustic wave (BAW) resonator devices suitable for operating with liquids. Temperature compensation methods dispense with a need for temperature sensing, instead utilizing a relationship between (i) change in frequency of a BAW resonator at a phase with adequate sensitivity and (ii) change in frequency of a phase that is correlated to temperature. Operational configuration methods include determination of an initial phase response of a BAW resonator in which temperature coefficient of frequency is zero, followed by comparison of sensitivity to a level of detection threshold for a phenomenon of interest.
RESONANCE FREQUENCY ADJUSTMENT FOR FIXED-FREQUENCY QUBITS
A method of an embodiment includes forming a capacitor pad for a nonlinear resonator. In an embodiment, the method includes comparing a resonance frequency of the nonlinear resonator to a target frequency to determine whether the resonance frequency falls within a range of the target frequency. A device of an embodiment includes a first capacitor pad comprising a superconducting material, the first capacitor pad configured to couple to a first end of a logic circuit element. In an embodiment, the device includes a second capacitor pad comprising a second superconducting material, the capacitor pad configured to couple to a second end of the logic circuit element. In an embodiment, the second capacitor pad includes a first portion; a second portion; and a bridge configured to electrically connect the first portion and the second portion.
ACOUSTIC RESONATOR AND FILTER DEVICE WITH BALANCED CHIRPING
An acoustic resonator is provided that includes a substrate; a piezoelectric layer supported by the substrate; and an interdigital transducer (IDT) at a surface of the piezoelectric layer. The IDT includes a pair of busbars and a plurality of electrode fingers extending from the first and second busbars to be interleaved with each other. The respective widths of at least a portion of the electrode fingers increases in a direction from respective first ends of the first and second busbars to the respective second end of the first and second busbars. Moreover, a pitch of the portion of the electrode fingers decreases in the direction from the respective first ends of the first and second busbar to the respective second ends of the first and second busbars.
ACOUSTIC RESONATOR AND FILTER DEVICE WITH BALANCED CHIRPING
An acoustic resonator is provided that includes a substrate; a piezoelectric layer supported by the substrate; and an interdigital transducer (IDT) at a surface of the piezoelectric layer. The IDT includes a pair of busbars and a plurality of electrode fingers extending from the first and second busbars to be interleaved with each other. The respective widths of at least a portion of the electrode fingers increases in a direction from respective first ends of the first and second busbars to the respective second end of the first and second busbars. Moreover, a pitch of the portion of the electrode fingers decreases in the direction from the respective first ends of the first and second busbar to the respective second ends of the first and second busbars.
Assembly processes for three-dimensional microstructures
Three-dimensional microstructure devices having substantially perfect alignment and leveling of a three-dimensional microstructure with respect to a substrate having a plurality of discrete electrodes and relating fabricating methods are disclosed. Seed layers are deposited onto the discrete electrodes of the substrate, and the three-dimensional microstructure is bonded adjacent to the seed layers. A substantially uniform sacrificial layer is deposited onto exposed surfaces of the three-dimensional microstructure. A plurality of first gaps exists between the seed layers and corresponding regions of the sacrificial layer. Conductive layers are deposited to fill the first gaps. The sacrificial layer is dissolved to create a second plurality of gaps between the conductive layers and the corresponding regions of the three-dimensional microstructure. The second gaps are substantially uniform.
Assembly processes for three-dimensional microstructures
Three-dimensional microstructure devices having substantially perfect alignment and leveling of a three-dimensional microstructure with respect to a substrate having a plurality of discrete electrodes and relating fabricating methods are disclosed. Seed layers are deposited onto the discrete electrodes of the substrate, and the three-dimensional microstructure is bonded adjacent to the seed layers. A substantially uniform sacrificial layer is deposited onto exposed surfaces of the three-dimensional microstructure. A plurality of first gaps exists between the seed layers and corresponding regions of the sacrificial layer. Conductive layers are deposited to fill the first gaps. The sacrificial layer is dissolved to create a second plurality of gaps between the conductive layers and the corresponding regions of the three-dimensional microstructure. The second gaps are substantially uniform.
Temperature compensation and operational configuration for bulk acoustic wave resonator devices
Operational configuration and temperature compensation methods are provided for bulk acoustic wave (BAW) resonator devices suitable for operating with liquids. Temperature compensation methods dispense with a need for temperature sensing, instead utilizing a relationship between (i) change in frequency of a BAW resonator at a phase with adequate sensitivity and (ii) change in frequency of a phase that is correlated to temperature. Operational configuration methods include determination of an initial phase response of a BAW resonator in which temperature coefficient of frequency is zero, followed by comparison of sensitivity to a level of detection threshold for a phenomenon of interest.
Temperature compensation and operational configuration for bulk acoustic wave resonator devices
Operational configuration and temperature compensation methods are provided for bulk acoustic wave (BAW) resonator devices suitable for operating with liquids. Temperature compensation methods dispense with a need for temperature sensing, instead utilizing a relationship between (i) change in frequency of a BAW resonator at a phase with adequate sensitivity and (ii) change in frequency of a phase that is correlated to temperature. Operational configuration methods include determination of an initial phase response of a BAW resonator in which temperature coefficient of frequency is zero, followed by comparison of sensitivity to a level of detection threshold for a phenomenon of interest.
Quartz crystal resonator and method for manufacturing the same, and quartz crystal resonator unit and method for manufacturing the same
A method for manufacturing a quartz crystal resonator that includes a quartz crystal blank having a vibrating portion including a center of a principal surface of the quartz crystal blank when viewed in plan from a direction normal to the principal surface and a peripheral portion adjacent to the vibrating portion, a pair of excitation electrodes disposed opposite to each other with the vibrating portion interposed therebetween, a pair of electrode pads disposed on the peripheral portion, and a pair of extended electrodes each extending from the vibrating portion to the peripheral portion to electrically connect one excitation electrode to a corresponding electrode pad, where the method includes conducting a first trimming of the vibrating portion and the peripheral portion; and conducting a second trimming of part of one of the excitation electrodes on the vibrating portion.