A method of printing comprises providing a component source wafer comprising components, a transfer device, and a patterned substrate. The patterned substrate comprises substrate posts that extend from a surface of the patterned substrate. Components are picked up from the component source wafer by adhering the components to the transfer device. One or more of the picked-up components are printed to the patterned substrate by disposing each of the one or more picked-up components onto one of the substrate posts, thereby providing one or more printed components in a printed structure.

An acoustic wave device includes: a substrate; a first electrode on the substrate; a piezoelectric layer on the first electrode; and a second electrode on the piezoelectric layer. A bonding interface is located between the substrate and the first electrode. The full width at half maximum (FWHM) in the X-ray diffraction pattern of the crystal plane <002> of the piezoelectric layer is between 10 arc-sec and 3600 arc-sec.

Disclosed is a device that includes a crystalline substrate and a patterned aluminum-based material layer disposed onto the crystalline substrate. The patterned aluminum-based material layer has a titanium-alloyed surface. A titanium-based material layer is disposed over select portions of the titanium-alloyed surface. In an exemplary embodiment, the patterned aluminum-based material layer forms a pair of interdigitated transducers to provide a surface wave acoustic (SAW) device. The SAW device of the present disclosure is usable to realize SAW-based filters for wireless communication equipment.

Disclosed is a device that includes a crystalline substrate and a patterned aluminum-based material layer disposed onto the crystalline substrate. The patterned aluminum-based material layer has a titanium-alloyed surface. A titanium-based material layer is disposed over select portions of the titanium-alloyed surface. In an exemplary embodiment, the patterned aluminum-based material layer forms a pair of interdigitated transducers to provide a surface wave acoustic (SAW) device. The SAW device of the present disclosure is usable to realize SAW-based filters for wireless communication equipment.

A surface acoustic wave (SAW) device having a high electromechanical coupling coefficient based on double-layer electrodes and a preparation method thereof. A structure of the SAW device includes a Cu electrode, a piezoelectric film and an Al electrode on a substrate in sequence. A signal terminal of the Cu electrode is opposite to a ground terminal of the Al electrode. A ground terminal of the Cu electrode is opposite to a signal terminal of the Al electrode. Since Sezawa wave mode that is adopted is formed by coupling film thickness vibration and transverse vibration, a longitudinal electric field (in a direction of thickness of a film) and a transverse electric field (in a propagation direction of SAW) are excited through the double-layer electrodes so that the electromechanical coupling coefficient of the SAW device is improved by changing a coupling pattern between the electric fields and the piezoelectric film.

A surface acoustic wave (SAW) device having a high electromechanical coupling coefficient based on double-layer electrodes and a preparation method thereof. A structure of the SAW device includes a Cu electrode, a piezoelectric film and an Al electrode on a substrate in sequence. A signal terminal of the Cu electrode is opposite to a ground terminal of the Al electrode. A ground terminal of the Cu electrode is opposite to a signal terminal of the Al electrode. Since Sezawa wave mode that is adopted is formed by coupling film thickness vibration and transverse vibration, a longitudinal electric field (in a direction of thickness of a film) and a transverse electric field (in a propagation direction of SAW) are excited through the double-layer electrodes so that the electromechanical coupling coefficient of the SAW device is improved by changing a coupling pattern between the electric fields and the piezoelectric film.

A bonded body has a supporting substrate composed of silicon, piezoelectric material substrate, and a bonding layer provided on a bonding surface of the supporting substrate and composed of a metal oxide. An amount of aluminum atoms on the bonding surface of the supporting substrate is 1.0×10.sup.11 to 1.0×10.sup.15 atoms/cm.sup.2.

A bonded body has a supporting substrate composed of silicon, piezoelectric material substrate, and a bonding layer provided on a bonding surface of the supporting substrate and composed of a metal oxide. An amount of aluminum atoms on the bonding surface of the supporting substrate is 1.0×10.sup.11 to 1.0×10.sup.15 atoms/cm.sup.2.

An acoustic wave device includes a functional electrode provided on a first main surface of an element substrate, extended wiring lines that are electrically connected to the functional electrode and that are adjacent to each other on a second main surface facing away from the first main surface, external terminals that are connected to the extended wiring lines, respectively, and that are provided on the second main surface, a first resin portion that seals the acoustic wave device, and a second resin portion that is provided at a position which is between the element substrate and the first resin portion and which is on the second main surface.

An acoustic wave device includes a functional electrode provided on a first main surface of an element substrate, extended wiring lines that are electrically connected to the functional electrode and that are adjacent to each other on a second main surface facing away from the first main surface, external terminals that are connected to the extended wiring lines, respectively, and that are provided on the second main surface, a first resin portion that seals the acoustic wave device, and a second resin portion that is provided at a position which is between the element substrate and the first resin portion and which is on the second main surface.