According to some embodiments, an on-chip diplexer circuit is disclosed. The on-chip diplexer circuit includes a LC resonator module, the LC resonator module further comprises a first port, a first LC resonator unit and a second LC resonator unit; a first filter unit, the first filter unit is electrically connected to the first LC resonator unit in the LC resonator module, and the first filter unit is electrically connected to a second port; and a second filter unit, the second filter unit is electrically connected to the second LC resonator unit in the LC resonator module, and the second filter unit is electrically connected to a third port. According to some embodiments, the first LC resonator unit serves as an impedance matching circuit for a first signal having a first resonant frequency and serves as an open circuit for a second signal having a second resonant frequency that is different from the first resonant frequency; the second LC resonator unit serves as an impedance matching circuit for the second signal having the second resonant frequency and serves as an open circuit for the first signal having the first resonant frequency. The first filter unit passes signals with the first resonant frequency; and the second filter unit passes signals with the second resonant frequency.

An amplifier circuit includes an amplifier, a balun comprising a primary side having a primary inductance and a secondary side having a secondary inductance, the primary side coupled to an output of the amplifier, the secondary side coupled to a first output path of the amplifier circuit and a second output path of the amplifier circuit, a shunt inductance coupled to the first output path; and a compensating inductance in the balun, the compensating inductance coupled between a first node and a second node, the first node coupling the compensating inductance to the first output path, the second node coupling the secondary inductance to the compensating inductance.

Disclosed are a radio-frequency power supply system, a plasma processor, and a corresponding frequency-tuning matching method applied to a plasma processor having an ultra-low frequency bias radio-frequency power source. The frequency-tuning matching method comprises an impedance segment frequency matching obtaining step including partitioning a low frequency radio-frequency power output period into a plurality of impedance matching segments, and during each impedance matching segment, tuning output frequency of a high frequency radio-frequency source, detecting reflected power of the high frequency radio-frequency power supply, and after experiencing one or more low frequency radio-frequency power output period, obtaining and storing the segment matching frequency for each impedance matching segment. In the subsequent variable-frequency matching step, output frequency of the high frequency radio-frequency power supply is set to periodically vary in the stored plurality of segment matching frequencies so as to match characteristic impedance in respective impedance matching segment.

In an embodiment, an electronic device may include a housing having an inner space, a first printed circuit board including a wireless communication circuit, an antenna structure connected to the wireless communication circuit through a first electrical path, and a tunable circuit having a first resistance value and disposed on a second electrical path. The electronic device may further include a low-resistance circuit disposed on a third electrical path branched from the second electrical path, and including a resistor and an inductor, the resistor having a second resistance value determined based on the first resistance value, and the inductor having a constant inductance value and disposed between the resistor and the ground. The electronic device may also include at least one processor configured to control the tunable circuit.

Embodiments may relate to a radio frequency (RF) front-end module (FEM) with a first filter and a second filter. The RF FEM may include a termination inductor coupled to ground, and a switch that is to selectively couple the first filter and the second filter to the termination inductor. Other embodiments may be described or claimed.

A radio-frequency module includes a first terminal, a second terminal, a first switch including a first switch terminal connected to the first terminal and a second switch terminal connectable to the first switch terminal, a second switch including a third switch terminal connectable to the second terminal, a first filter connected between the second switch terminal and the third switch terminal, and a substrate. The first switch and the second switch are included in a single semiconductor chip. The first filter and the semiconductor chip are on the substrate. In a plan view of the substrate, a first distance between the third switch terminal and the first switch terminal or a second distance between the third switch terminal and the second switch terminal is greater than a third distance between the first switch terminal and the second switch terminal.

An integrated isolator circuit for isolating receiver and transmitter in a Time-Division Duplex transceiver is disclosed. The integrated isolator circuit comprises a first node, a second node and a third node. The integrated isolator circuit further comprises a first capacitor connected in series with a first switch and connected between the first and second nodes. The integrated isolator circuit further comprises a first inductor connected between the first and second nodes and a second capacitor connected between the second node and the third node. The first switch has an on state and an off state, and the integrated isolator circuit is configured to have a different impedance at a certain operating frequency by controlling the state of the first switch.

Disclosed is an impedance matcher for use in a communication system, operable to match a transmitter or receiver, respectively, to an associated antenna, comprising a stub matching circuit and a phase shifter, whereby, in use, energy flows from a source to the phase shifter, to the stub matching circuit and to a load.

A radio-frequency module includes a multilayer substrate, an input switch, an output switch, and filters. A switch IC is disposed on a main surface of the multilayer substrate. The input switch is disposed in the switch IC and includes a first input terminal and first output terminals. The output switch is disposed in the switch IC and includes second input terminals and a second output terminal. The filters are disposed outside the switch IC and are connected to the first output terminals and the second input terminals. In a plan view of the multilayer substrate, the first input terminal and the first output terminals are disposed close to a first side of an exterior of the switch IC, and the second input terminals and the second output terminal are disposed close to a second side different from the first side of the exterior of the switch IC.

A switch component includes a common terminal, at least two selection terminals, a switching circuit that selectively connects the common terminal to each of the at least two selection terminals, and an inductor. One end of the inductor is connected to one of the at least two selection terminals. The switching circuit is integrated with the inductor.