A bulk acoustic wave resonator apparatus includes a resonator member, at least one anchor structure coupling the resonator member to a substrate, and a comb-drive element connected to the resonator member. The comb-drive element includes first comb fingers protruding from the resonator member, and second comb fingers of a different material than the first comb fingers interdigitated with the first comb fingers to define sub-micron capacitive gaps therebetween. Respective sidewalls of the first comb fingers are oppositely-tapered relative to respective sidewalls of the second comb fingers along respective lengths thereof, such that operation of the comb-drive element varies the sub-micron capacitive gaps at the respective sidewalls thereof. Respective tuning electrodes, which are slanted at respective angles parallel to an angle of respective sidewalls of the resonator member, may also be provided for quadrature tuning between different resonance modes of the resonator member. Related devices and fabrication methods are also discussed.

An acoustic wave device includes a piezoelectric film made of lithium niobate or lithium tantalate, first and second busbar electrodes located on the piezoelectric film and opposite to each other, and first and second electrode fingers and each including one end coupled to the first busbar electrode or the second busbar electrode. The acoustic wave device uses bulk waves in a first thickness-shear mode. A first gap is provided between the first busbar electrode and the second electrode finger. A second gap is provided between the second busbar electrode and the first electrode finger. A length of the first gap and the second gap in a direction in which the first and second electrode fingers extend is about 0.92p or longer, where p is a center-to-center distance between the adjacent first and second electrode fingers.

Filter devices and fabrication methods are disclosed. A filter device includes a piezoelectric plate and a conductor pattern on a front surface of the piezoelectric plate. The conductor pattern includes interdigital transducers (IDTs) of a plurality of transversely-excited film bulk acoustic resonators (XBARs) and a plurality of conductors connecting the plurality of XBARs in a ladder filter circuit architecture. The plurality of conductors includes a first conductor adjacent to a second conductor. An opening is provided through the piezoelectric plate between the first conductor and the second conductor.

The present disclosure relates to a method for fabricating a laterally excited shear mode acoustic resonator. The method includes: providing a piezoelectric layer including monocrystalline lithium niobate and/or monocrystalline lithium tantalate; forming an acoustic mirror on a first surface of the piezoelectric layer; the acoustic mirror including at least one first acoustic reflection layer and at least one second acoustic reflection layer, the first acoustic reflection layers and the second acoustic reflection layers being alternately superimposed, and acoustic impedance of each of the first acoustic reflection layers being less than that of each of the second acoustic reflection layers; bonding a bearing wafer on a first surface of the acoustic mirror; and forming an electrode unit and a lateral reflector on a second surface of the piezoelectric layer.

A laterally excited bulk wave resonator includes a supporting plate; a piezoelectric base having a back side attached to the supporting plate, in which a cavity is defined on a side of the supporting plate facing toward the piezoelectric base; a lower interdigital transducer provided at a back side of the piezoelectric base and located in the cavity; and an upper interdigital transducer provided at a front side of the piezoelectric base corresponding to the lower interdigital transducer. A first interdigital electrode of the lower interdigital transducer has a same polarity as a second interdigital electrode of the upper interdigital transducer at a position corresponding to the first interdigital electrode.

An acoustic resonator has a piezoelectric plate having first and second surfaces, the second surface facing a substrate, and a diaphragm of the piezoelectric plate spanning a cavity. A conductor pattern is formed on at least one of the first and second surfaces and has an interdigital transducer (IDT) having interleaved fingers on the diaphragm portion of the piezoelectric plate. At least one of a pitch of the interleaved IDT fingers or a mark of the interleaved IDT fingers varies over an area of the IDT to compensate for process-induced distortion of the diaphragm portion of the piezoelectric plate.

A process for fabricating a micro-electro-mechanical system, includes the following steps: production of a stack on the surface of a temporary substrate so as to produce a first assembly, comprising: at least depositing a piezoelectric material or a ferroelectric material to produce a layer of piezoelectric material or of ferroelectric material; producing a first bonding layer; production of a second assembly comprising at least producing a second bonding layer on the surface of a host substrate; production of at least one acoustic isolation structure in at least one of the two assemblies; production of at least one electrode level containing one or more electrodes in at least one of the two assemblies; bonding the two assemblies via the two bonding layers, before or after the production of the at least one electrode level in at least one of the two assemblies; removing the temporary substrate.

Acoustic resonator devices and methods are disclosed. An acoustic resonator device includes a substrate having a front surface and a cavity, a perimeter of the cavity defined by a lateral etch-stop comprising etch-stop material. A back surface of a single-crystal piezoelectric plate is attached to the front surface of the substrate except for a portion of the piezoelectric plate that forms a diaphragm that spans the cavity. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The piezoelectric plate and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the diaphragm.

An acoustic wave device includes a piezoelectric layer that is made of lithium niobate or lithium tantalate, and a plurality of pairs of electrodes opposed to each other in a direction intersecting with a thickness direction of the piezoelectric layer, in which a bulk wave in a thickness shear primary mode is used or d/p is about 0.5 or lower when a thickness of the piezoelectric layer is d and a distance between centers of mutually adjacent electrodes among the plurality of pairs of electrodes is p. The plurality of pairs of electrodes include at least one pair of first electrodes of a first acoustic wave resonator and at least one pair of second electrodes of a second acoustic wave resonator. A direction orthogonal to a longitudinal direction of the second electrodes in the second acoustic wave resonator is inclined at an angle that is greater than 0° and smaller than 360° with respect to a direction orthogonal to a longitudinal direction of the first electrodes in the first acoustic wave resonator.

A vibration member is provided that includes a base with front and rear ends opposite to each other, and vibration arms fixed to the front end, extending away therefrom, and including at least one first vibration arm and a pair of second vibration arms positioned on both sides of a first vibration arm group including the at least one first vibration arm in a direction intersecting a longitudinal direction. A holding arm is provided that has one end connected to the base and the other end connected to a frame. A plurality of vibration portions include a piezoelectric film, and a lower electrode and an upper electrode that sandwich the piezoelectric film. A connection wiring line that connects the respective upper electrodes of the pair of second vibration arms to each other is provided in a region of at least either of the base or the holding arm.