H03H2009/155

Microelectromechanical Tunable Delay Line Circuit
20220077848 · 2022-03-10 ·

Tunable delay circuit devices have an input port, an output port, at least three parallel paths connecting the input port and the output port, on each path, an input switch and an output switch, and on each path, a plurality of shunt resonant tanks connected between the input switch and the output switch, each shunt resonant tank periodically chargeable from the input port and dischargeable to the output port by operation of the input switch and the output switch.

Quartz MEMS piezoelectric resonator for chipscale RF antennae

A RF antenna comprises a quartz resonator having electrodes disposed thereon with a magnetostrictive film disposed on the quartz resonator either on, partially under or adjacent at least one of the electrodes. A RF antenna having a magnetostrictive film may be made by patterning selected portions of a top surface of the quartz wafer for deposition of electrode metal and deposition of the magnetostrictive film and depositing the electrode metal and the magnetostrictive film; temporarily bonding the quartz wafer to a handle wafer; thinning the quartz wafer to a desired thickness; etching the quartz wafer to define the outlines of at least one quartz resonator bearing the electrode metal and the magnetostrictive film; patterning selected portions of a bottom surface the at least one quartz resonator for deposition of electrode metal and at least one bond pad and depositing the electrode metal and the at least one bond pad; bonding the at least one quartz resonator to a substrate wafer; and releasing the at least one quartz resonator from the handle wafer.

Electrical device and method for manufacturing the same

An electrical device includes an electronic component, a membrane and a cover. The electronic component has a first surface and a second surface opposite to the first surface. The electronic component has a cavity extending from the first surface of the electronic component into the electronic component. The membrane is disposed within the cavity of the electronic component. The cover is disposed on the first surface of the electronic component.

Resonator and resonance device
11108373 · 2021-08-31 · ·

A vibrator that includes a silicon substrate, an electrode facing a surface of the silicon substrate, and a piezoelectric body between the silicon substrate and the electrode and that produces contour vibration in a plane along the surface of the silicon substrate in accordance with a voltage applied to the electrode. The vibrator includes one or more substantially rectangular vibration regions each having a long side parallel to a node of the contour vibration of the piezoelectric body and a short side orthogonal to the node of the contour vibration of the piezoelectric body and corresponding to a half-wavelength of the contour vibration. The resonator satisfies W/T≥4 and y=−0.85×(1/T)+0.57±0.05 where T is the thickness of the silicon substrate, W is the width of the short side of the vibration region, and y is the resistivity of the silicon substrate.

Temperature stable mems resonator

A resonant member of a MEMS resonator oscillates in a mechanical resonance mode that produces non-uniform regional stresses such that a first level of mechanical stress in a first region of the resonant member is higher than a second level of mechanical stress in a second region of the resonant member. A plurality of openings within a surface of the resonant member are disposed more densely within the first region than the second region and at least partly filled with a compensating material that reduces temperature dependence of the resonant frequency corresponding to the mechanical resonance mode.

RESONATOR AND RESONANCE DEVICE
20210184651 · 2021-06-17 ·

A resonator includes a base, at least one vibration arm, a frame, and a holding arm. The vibration arm includes a piezoelectric film, an upper electrode, and a lower electrode. The inequality Fs/Fm<1.9 or the inequality 2.1<Fs/Fm holds, where Fm is a frequency of a main or primary mode in the vibration arm, and Fs is a frequency of a spurious mode in the holding arm.

RESONANCE DEVICE
20210194454 · 2021-06-24 ·

A resonance device is provided for reducing the influence on the resonant frequency of the resonance device of the electric charge borne by an insulating film of a frame. The resonance device includes a resonator including a vibration portion and a frame disposed in at least a part of a vicinity of the vibration portion. The frame includes a holding body and an insulating film, with the holding body holding the vibration portion to vibrate and the insulating film being formed above the holding body. A lower cover is provided having a recess forming at least a part of a space in which the vibration portion vibrates. An inner side surface of the insulating film is disposed at a first distance from an inner surface of a side wall defining the recess.

PIEZO-ACTUATED MEMS RESONATOR

A microelectromechanical system (MEMS) resonator includes a degenerately-doped single-crystal silicon layer and a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer. An electrically-conductive material layer is disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and patterned to form first and second electrodes.

RESONANCE DEVICE
20210167751 · 2021-06-03 ·

A resonance device is provided that includes a resonator including upper electrodes, a lower electrode, and a piezoelectric thin film formed therebetween. An upper cover is provided with a first surface facing the upper electrodes of the resonator. A power supply terminal is provided on a second surface of the upper cover with the power supply terminal electrically connected to the upper electrodes. Another power supply terminal is on the second surface of the upper cover and is electrically connected to the upper electrodes. A ground terminal is provided on the second surface of the upper cover and is electrically connected to the lower electrode. An area of each power supply terminal are different from one other such that a capacitance formed between the first power supply terminal and the ground terminal is approximately equal to a capacitance formed between the second power supply terminal and the ground terminal.

PIEZOELECTRIC MICROELECTROMECHANICAL RESONATOR DEVICE AND CORRESPONDING MANUFACTURING PROCESS

A microelectromechanical resonator device has: a main body, with a first surface and a second surface, opposite to one another along a vertical axis, and made of a first layer and a second layer, arranged on the first layer; a cap, having a respective first surface and a respective second surface, opposite to one another along the vertical axis, and coupled to the main body by bonding elements; and a piezoelectric resonator structure formed by: a mobile element, constituted by a resonator portion of the first layer, suspended in cantilever fashion with respect to an internal cavity provided in the second layer and moreover, on the opposite side, with respect to a housing cavity provided in the cap; a region of piezoelectric material, arranged on the mobile element on the first surface of the main body; and a top electrode, arranged on the region of piezoelectric material, the mobile element constituting a bottom electrode of the piezoelectric resonator structure.