Resonating sensors for use in high-pressure and high-temperature environments are provided. In one embodiment, an apparatus includes a sensor with a double-ended tuning fork piezoelectric resonator that includes a first tine and a second tine. These tines are spaced apart from one another so as to form a slot between the first and second tines. The width of the slot from the first tine to the second tine varies along the lengths of the first and second tines. Various other resonators, devices, systems, and methods are also disclosed.

Resonating sensors for use in high-pressure and high-temperature environments are provided. In one embodiment, an apparatus includes a sensor with a double-ended tuning fork piezoelectric resonator that includes a first tine and a second tine. These tines are spaced apart from one another so as to form a slot between the first and second tines. The width of the slot from the first tine to the second tine varies along the lengths of the first and second tines. Various other resonators, devices, systems, and methods are also disclosed.

An electrical field detector includes an electromechanical oscillator, part of which is included of a piezoelectric element, a frequency measuring device which is coupled to the oscillator so as to measure the oscillation frequency, and an electrical masking assembly. The electrical masking assembly is arranged close to the piezoelectric element so that, during an use of the detector, the piezoelectric element moves by vibrating relative to the electrical masking assembly. A variable part of the piezoelectric element is thus exposed to the electrical field to be measured. A change in the oscillating frequency then forms an electrical field measurement result.

A resonator is provided that includes a vibrating portion including three or more vibrating arms with at least two vibrating arms that bend out of plane with different phases and a base. The resonator also includes a frame that holds the vibrating portion; and a support arm having one end connected to the frame and the other end connected to a rear end portion of the base. The other end of the support arm is connected to a position in a range from −0.1 WB to 0.1 WB, with respect to a base width WB of the base, relative to a position, on the rear end portion of the base where a center line passes in a plan view. A support arm length of the support arm is 0.2 or more times and 0.4 or less times a vibrating arm length of the vibrating arms.

An oscillator includes: a resonator element; a circuit element; and a container including a substrate mounted with the circuit element, in which the circuit element includes a first coupling terminal coupled to the resonator element, a second coupling terminal coupled to the resonator element and aligned in a first direction with the first coupling terminal in the first direction, and an output terminal disposed adjacent to the first coupling terminal in a second direction orthogonal to the first direction, in the second direction orthogonal to the first direction, and in which the substrate includes a first surface mounted with the circuit element and a second surface, and the substrate includes a first coupling electrode provided on the first surface and coupled to the first coupling terminal, a second coupling electrode coupled to the second coupling terminal, an output electrode coupled to the output terminal, a first coupling wiring provided on the second surface and coupled to the first coupling electrode, a second coupling wiring coupled to the second coupling electrode, an output wiring coupled to the output electrode, and a shield wiring that is provided between the first coupling wiring and the output wiring and to which a direct-current potential is applied.

When a thick frequency adjustment metal film of a tuning fork-type vibration piece is irradiated with a beam on a wafer for frequency coarse adjustment, projections are possibly formed on a roughened end of the frequency adjustment metal film. Such projections are pressurized and pushed down not to chip off under any impact, so that the risk of frequency fluctuations is suppressed.

When a thick frequency adjustment metal film of a tuning fork-type vibration piece is irradiated with a beam on a wafer for frequency coarse adjustment, projections are possibly formed on a roughened end of the frequency adjustment metal film. Such projections are pressurized and pushed down not to chip off under any impact, so that the risk of frequency fluctuations is suppressed.

Resonating sensors for use in high-pressure and high-temperature environments are provided. In one embodiment, an apparatus includes a sensor with a double-ended tuning fork piezoelectric resonator that includes a first tine and a second tine. These tines are spaced apart from one another so as to form a slot between the first and second tines. The width of the slot from the first tine to the second tine varies along the lengths of the first and second tines. Various other resonators, devices, systems, and methods are also disclosed.

Resonating sensors for use in high-pressure and high-temperature environments are provided. In one embodiment, an apparatus includes a sensor with a double-ended tuning fork piezoelectric resonator that includes a first tine and a second tine. These tines are spaced apart from one another so as to form a slot between the first and second tines. The width of the slot from the first tine to the second tine varies along the lengths of the first and second tines. Various other resonators, devices, systems, and methods are also disclosed.

When a thick frequency adjustment metal film of a tuning fork-type vibration piece is irradiated with a beam on a wafer for frequency coarse adjustment, projections are possibly formed on a roughened end of the frequency adjustment metal film. Such projections are pressurized and pushed down not to chip off under any impact, so that the risk of frequency fluctuations is suppressed.