A microelectromechanical system with at least one partly mobile mass element which is suspended from a fixed support by one or more suspension units. Each suspension unit comprises first springs which extend from the fixed support to the partly mobile mass element, and second springs which also extend from the fixed support to the partly mobile mass element. Each second spring is substantially parallel and adjacent to one first spring. The first springs are electrically isolated from the second springs, and the microelectromechanical system comprises a voltage source configured to apply a frequency tuning voltage between the one or more first springs and the one or more second springs.

A resonator array comprises substantially paralleled first and second resonant layers having resonating masses. A first set of lateral drive electrodes cause the first resonating mass to vibrate along an axis in a first geometric plane. A second set of lateral drive electrodes cause the second resonating mass to vibrate along an axis in a second geometric plane in an opposite direction of the first resonating mass by about 180 degrees. Rotation in the system causes the masses to vibrate out-of-plane in opposite directions. The opposite vibrational directions of the first and second resonating masses produces a balanced system with small motion in a bonding area between the stacked resonators. As a result, there is minimal propagation of mechanical waves from the balanced system to a substrate resulting in lower anchor loss and a high Q-factor.

A multi resonator system is provided including a support substrate and a plurality of multi resonators. Each of the plurality of multi resonators includes a plurality of resonators, and one end of each of the plurality of resonators is fixed to the support substrate. Center frequencies of different ones of the plurality of multi resonators are different from each other, and the plurality of resonators within each individual multi resonator all have a same center frequency.

Provided is a Precision Voltage Reference (PVR). In one example, the PVR includes a resonator having an oscillation frequency, the resonator including a first proof-mass, a first forcer located adjacent a first side of the first proof-mass, and a second forcer located adjacent a second side of the first proof-mass. The PVR may include control circuitry configured to generate a reference voltage based on the oscillation frequency of the resonator, at least one converter configured to receive the reference voltage from the control circuitry, provide a first bias voltage to the first forcer based on the reference voltage, provide a second bias voltage to the second forcer based on the reference voltage, and periodically alter a polarity of the first and second bias voltages to drive the oscillation frequency to match a reference frequency, and an output configured to provide the reference voltage as a voltage reference signal.

Provided is a Precision Voltage Reference (PVR). In one example, the PVR includes a resonator having an oscillation frequency, the resonator including a first proof-mass, a first forcer located adjacent a first side of the first proof-mass, and a second forcer located adjacent a second side of the first proof-mass. The PVR may include control circuitry configured to generate a reference voltage based on the oscillation frequency of the resonator, at least one converter configured to receive the reference voltage from the control circuitry, provide a first bias voltage to the first forcer based on the reference voltage, provide a second bias voltage to the second forcer based on the reference voltage, and periodically alter a polarity of the first and second bias voltages to drive the oscillation frequency to match a reference frequency, and an output configured to provide the reference voltage as a voltage reference signal.

A resonant member of a MEMS resonator oscillates in a mechanical resonance mode that produces non-uniform regional stresses such that a first level of mechanical stress in a first region of the resonant member is higher than a second level of mechanical stress in a second region of the resonant member. A plurality of openings within a surface of the resonant member are disposed more densely within the first region than the second region and at least partly filled with a compensating material that reduces temperature dependence of the resonant frequency corresponding to the mechanical resonance mode.

Provided are micromechanical resonators and resonator systems including the micromechanical resonators. The micromechanical resonators may each include a supporting beam including a fixed end fixed on a supporting member and a loose end configured to vibrate, and a lumped mass arranged on the loose end, wherein the loose end has a width greater than a width of the fixed end, and a width of the lumped mass is greater than that the width of the fixed end.

A resonator is provided that suppresses vibration of a retainer caused by undesired vibration of a vibrating portion and also achieves size reduction. Specifically, the resonator includes a vibrating member that includes a semiconductor layer, a first piezoelectric film formed on the semiconductor layer, and a first upper electrode formed on the first piezoelectric film. Moreover, a retainer is provided to retain the vibrating member such that the vibrating portion can vibrate and one or more coupling members are provided to couple the vibrating member to the retainer. Finally, the resonator includes a vibration suppressing member that includes a second piezoelectric film formed on the retainer and a second upper electrode formed on the second piezoelectric film.

The present inventions, in one aspect, are directed to micromachined resonator comprising: a first resonant structure extending along a first axis, wherein the first axis is different from a crystal axis of silicon, a second resonant structure extending along a second axis, wherein the second axis is different from the first axis and the crystal axis of silicon and wherein the first resonant structure is coupled to the second resonant structure, and wherein the first and second resonant structures are comprised of silicon (for example, substantially monocrystalline) and include an impurity dopant (for example, phosphorus) having a concentrations which is greater than 10.sup.19 cm.sup.3, and preferably between 10.sup.19 cm.sup.3 and 10.sup.21 cm.sup.3.

An integrated circuit may include oscillator circuitry having a resonator formed from fin field-effect transistor (FinFET) devices. The resonator may include drive cells of alternating polarities and sense cells interposed between the drive cells. The resonator may be connected in a feedback loop within the oscillator circuitry. The oscillator circuitry may include an amplifier having an input coupled to the sense cells and an output coupled to the drive cells. The oscillator circuitry may also include a separate inductor and capacitor based oscillator, where the resonator serves as a separate output filter stage for the inductor and capacitor based oscillator.