In an embodiment, a unit delay circuit comprises a first path configured to delay a first input signal to output a first output signal when a selection signal is inactivated, a second path configured delay a second input signal to output a second output signal when the selection signal is inactivated, and a third path configured to delay the first input signal to output the second output signal when the selection signal is activated.

A CMOS all-digital pulse-mixing device includes a plurality of homogeneous logic elements serially connected to form a basic element sequence, an odd-positioned element parallel connection set and an even-positioned element parallel connection set. The basic element sequence includes odd combination positions and even combination positions. The odd-positioned element parallel connection set serially connects with one of the odd combination positions and the even-positioned element parallel connection set serially connects with one of the even combination positions. The odd-positioned element parallel connection set and the even-positioned element parallel connection set are provided to stretch or shrink a pulse mixture, which is distinguished from a conventional full-customized pulse-mixing device.

An apparatus of performing a clock skew adjustment between at least first and second clock signals includes first and second skew sensors and a skew controller. The first skew sensor receives a third clock signal obtained by delaying the first clock signal by a first delay and a fourth clock signal obtained by delaying the second clock signal by a second delay, and generates first information based on the third and fourth clock signals. The second skew sensor receives a fifth clock signal obtained by delaying the first clock signal by a third delay and a sixth clock signal obtained by delaying the second clock signal by a fourth delay, and generates second information based on the fifth and sixth clock signals. Each of the first and second information varies depending on the clock skew. The skew controller performs the clock skew adjustment based on the first and second information.

A semiconductor device according to an embodiment includes; an N-channel type first MOS transistor having a first drain connected to an input terminal, a first source connected to an output terminal, a first gate insulation film, and a first gate; a P-channel type second MOS transistor having a second drain connected to the input terminal in parallel with the first drain, a second source connected to the output terminal in parallel with the first source, a second gate insulation film whose area is larger than an area of the first gate insulation film, and a second gate; an inverter connected to a control terminal in parallel with the first gate; and a delay circuit disposed between the inverter and second gate.

A semiconductor device according to an embodiment includes; an N-channel type first MOS transistor having a first drain connected to an input terminal, a first source connected to an output terminal, a first gate insulation film, and a first gate; a P-channel type second MOS transistor having a second drain connected to the input terminal in parallel with the first drain, a second source connected to the output terminal in parallel with the first source, a second gate insulation film whose area is larger than an area of the first gate insulation film, and a second gate; an inverter connected to a control terminal in parallel with the first gate; and a delay circuit disposed between the inverter and second gate.

A semiconductor device according to an embodiment includes; an N-channel type first MOS transistor having a first drain connected to an input terminal, a first source connected to an output terminal, a first gate insulation film, and a first gate; a P-channel type second MOS transistor having a second drain connected to the input terminal in parallel with the first drain, a second source connected to the output terminal in parallel with the first source, a second gate insulation film whose area is larger than an area of the first gate insulation film, and a second gate; an inverter connected to a control terminal in parallel with the first gate; and a delay circuit disposed between the inverter and second gate.

A semiconductor device according to an embodiment includes; an N-channel type first MOS transistor having a first drain connected to an input terminal, a first source connected to an output terminal, a first gate insulation film, and a first gate; a P-channel type second MOS transistor having a second drain connected to the input terminal in parallel with the first drain, a second source connected to the output terminal in parallel with the first source, a second gate insulation film whose area is larger than an area of the first gate insulation film, and a second gate; an inverter connected to a control terminal in parallel with the first gate; and a delay circuit disposed between the inverter and second gate.

A delaying element includes a first XOR logic gate and a second XOR logic gate. A first input of the first XOR logic gate defines an input terminal. A first input of the second XOR logic gate is connected to an output of the first XOR logic gate. An output of the second XOR logic gate defines an output terminal. The second inputs of the first and second XOR logic gates are connected to a second input terminal.

High-data rate channel interface modules and equalization methods employing a finite impulse response (FIR) analog receive filter. Embodiments include an illustrative channel interface module having multiple amplifier-based delay units arranged in a sequential chain to convert an analog input signal into a set of increasingly-delayed analog signals that are weighted and combined together with the analog input signal to form an equalized signal; and a symbol decision element operating on the equalized signal to obtain a sequence of symbol decisions. An interface that extracts received data from the sequence of symbol decisions. The delay units may employ one or more delay cells each having a common-source amplifier stage followed by a source follower output stage, the two stages providing approximately equal portions of the propagation delay. An enhanced gate-to-drain capacitance in the common-source amplifier may increase propagation delay while reducing bandwidth limitations.

A disclosed delay circuit includes a plurality of Schmitt triggers that are serially coupled. A first Schmitt trigger of the plurality of Schmitt triggers is configured to receive an input signal. An output control circuit is coupled to receive output signals of two or more Schmitt triggers of the plurality of Schmitt triggers, the output control circuit configured to select a signal from one of the one or more Schmitt triggers as an output signal. The output signal is a delayed version of the input signal.