A balanced-to-unbalanced (balun) transformer includes a primary inductor coupled to an unbalanced terminal and a secondary inductor coupled to a balanced terminal. The primary inductor is configured on a second layer and a third layer of a four-layer symmetrical stack-up. The secondary inductor is configured on a first layer and a fourth layer of the four-layer symmetrical stack-up. The primary inductor includes a first primary winding disposed on the second layer and a second primary winding disposed on the third layer. The secondary inductor includes a first secondary winding disposed on the first layer and a second secondary winding disposed on the fourth layer.

Provided is a transversal radio frequency filter circuit having a low noise amplifier connected along an input signal path, a first power divider connected between the low noise amplifier and four single taps, and an output path connected to the outputs of each of the four single taps. Each of the four single taps having a coefficient control mechanism, a polarity selection mechanism, and a time delay element. The coefficient control mechanism can include a wideband digital step attenuator configured to support high control range of the coefficient. Additionally, the circuit can include a second power divider connected between the outputs of each of the four single taps and the output path. The circuit can further include a field-programmable gate array configured to control coefficient control mechanisms, the polarity selection mechanisms, and the time delay elements.

Provided is a transversal radio frequency filter circuit having a low noise amplifier connected along an input signal path, a first power divider connected between the low noise amplifier and four single taps, and an output path connected to the outputs of each of the four single taps. Each of the four single taps having a coefficient control mechanism, a polarity selection mechanism, and a time delay element. The coefficient control mechanism can include a wideband digital step attenuator configured to support high control range of the coefficient. Additionally, the circuit can include a second power divider connected between the outputs of each of the four single taps and the output path. The circuit can further include a field-programmable gate array configured to control coefficient control mechanisms, the polarity selection mechanisms, and the time delay elements.

According to one embodiment, a transformer-based in-phase and quadrature (IQ) includes a differential balun having a first inductor and a second inductor. The first inductor has a first input terminal and a first output terminal. The second inductor has a second input terminal and a second output terminal. Additionally, the IQ generator circuit includes a third inductor magnetically coupled with the first inductor. The third inductor has a first isolation terminal and a third output terminal. The IQ generator circuit also includes a fourth inductor magnetically coupled with the second inductor. The fourth inductor has a second isolation terminal and a fourth output terminal. The IQ generator circuit additionally includes a first transistor coupled to the first input terminal of the first inductor. Further, the generator circuit includes a second transistor coupled to the second input terminal of the second inductor. The first transistor, the second transistor, the first inductor, and the second inductor form a part of a differential amplifier.

According to one embodiment, a transformer-based in-phase and quadrature (IQ) includes a differential balun having a first inductor and a second inductor. The first inductor has a first input terminal and a first output terminal. The second inductor has a second input terminal and a second output terminal. Additionally, the IQ generator circuit includes a third inductor magnetically coupled with the first inductor. The third inductor has a first isolation terminal and a third output terminal. The IQ generator circuit also includes a fourth inductor magnetically coupled with the second inductor. The fourth inductor has a second isolation terminal and a fourth output terminal. The IQ generator circuit additionally includes a first transistor coupled to the first input terminal of the first inductor. Further, the generator circuit includes a second transistor coupled to the second input terminal of the second inductor. The first transistor, the second transistor, the first inductor, and the second inductor form a part of a differential amplifier.

A radio frequency (RF) power amplifier (PA) for amplifying an RF signal between a source node and an output node, the RF PA including a silicon substrate with a complementary metal oxide semiconductor (CMOS) N-type transistor with a source region and a drain region fabricated therein. The source region includes the source node of the RF PA and the drain region includes the output node of the RF PA. The RF PA includes a planar resistor fabricated on the surface of the silicon substrate proximal to the drain region of the N-type transistor, wherein the resistor provides a thermal source for heating the RF PA; and a control circuit providing thermal heating to the RF PA by providing power to the planar resistor during RF signal bursts wherein the added thermal heating compensates transient heating within the transistor and results in a linear power amplification operation.

A radio frequency (RF) power amplifier (PA) for amplifying an RF signal between a source node and an output node, the RF PA including a silicon substrate with a complementary metal oxide semiconductor (CMOS) N-type transistor with a source region and a drain region fabricated therein. The source region includes the source node of the RF PA and the drain region includes the output node of the RF PA. The RF PA includes a planar resistor fabricated on the surface of the silicon substrate proximal to the drain region of the N-type transistor, wherein the resistor provides a thermal source for heating the RF PA; and a control circuit providing thermal heating to the RF PA by providing power to the planar resistor during RF signal bursts wherein the added thermal heating compensates transient heating within the transistor and results in a linear power amplification operation.

A radio frequency (RF) jamming device includes a differential segmented aperture (DSA), a jammer source outputting a jamming signal at one or more frequencies or frequency bands to be jammed, and RF electronics that amplify and feed the jamming signal to the DSA so as to emit a jamming beam. The DSA includes an array of electrically conductive tapered projections, and the RF electronics comprise power splitters configured to split the jamming signal to aperture pixels of the DSA. The aperture pixels comprise pairs of electrically conductive tapered projections of the array of electrically conductive tapered projections. The RF electronics further comprise pixel power amplifiers, each connected to amplify the jamming signal fed to a single corresponding aperture pixel of the DSA. The RF jamming device may include a rifle-shaped housing, with the DSA mounted at a distal end of the barrel of the rifle-shaped housing.

A radio frequency (RF) jamming device includes a differential segmented aperture (DSA), a jammer source outputting a jamming signal at one or more frequencies or frequency bands to be jammed, and RF electronics that amplify and feed the jamming signal to the DSA so as to emit a jamming beam. The DSA includes an array of electrically conductive tapered projections, and the RF electronics comprise power splitters configured to split the jamming signal to aperture pixels of the DSA. The aperture pixels comprise pairs of electrically conductive tapered projections of the array of electrically conductive tapered projections. The RF electronics further comprise pixel power amplifiers, each connected to amplify the jamming signal fed to a single corresponding aperture pixel of the DSA. The RF jamming device may include a rifle-shaped housing, with the DSA mounted at a distal end of the barrel of the rifle-shaped housing.

According to one embodiment, a transformer-based in-phase and quadrature (IQ) includes a differential balun having a first inductor and a second inductor. The first inductor has a first input terminal and a first output terminal. The second inductor has a second input terminal and a second output terminal. Additionally, the IQ generator circuit includes a third inductor magnetically coupled with the first inductor. The third inductor has a first isolation terminal and a third output terminal. The IQ generator circuit also includes a fourth inductor magnetically coupled with the second inductor. The fourth inductor has a second isolation terminal and a fourth output terminal. The IQ generator circuit additionally includes a first transistor coupled to the first input terminal of the first inductor. Further, the generator circuit includes a second transistor coupled to the second input terminal of the second inductor. The first transistor, the second transistor, the first inductor, and the second inductor form a part of a differential amplifier.