A level shifting circuit has an input configured to receive an input signal, wherein the input signal has symmetrical maximum and minimum voltages. The level shifting circuit further includes an output configured to provide an output signal, wherein the output signal has asymmetrical maximum and minimum voltages. The output signal is generated in response to the input signal. The output signal is applied to drive a gate terminal of a SiC MOSFET.

A level shifting circuit has an input configured to receive an input signal, wherein the input signal has symmetrical maximum and minimum voltages. The level shifting circuit further includes an output configured to provide an output signal, wherein the output signal has asymmetrical maximum and minimum voltages. The output signal is generated in response to the input signal. The output signal is applied to drive a gate terminal of a SiC MOSFET.

A level shifting circuit has an input configured to receive an input signal, wherein the input signal has symmetrical maximum and minimum voltages. The level shifting circuit further includes an output configured to provide an output signal, wherein the output signal has asymmetrical maximum and minimum voltages. The output signal is generated in response to the input signal. The output signal is applied to drive a gate terminal of a SiC MOSFET.

Provided are a device for adjusting an ultrasonic resonance frequency and a method of controlling the same. A device according to an embodiment of the present disclosure includes a circuit board configured to determine and output a resonance frequency. In addition, the device includes a frequency adjustor connected to at least one of a plurality of circuits mounted on the circuit board.

Provided are a device for adjusting an ultrasonic resonance frequency and a method of controlling the same. A device according to an embodiment of the present disclosure includes a circuit board configured to determine and output a resonance frequency. In addition, the device includes a frequency adjustor connected to at least one of a plurality of circuits mounted on the circuit board.

A level shifting circuit has an input configured to receive an input signal, wherein the input signal has symmetrical maximum and minimum voltages. The level shifting circuit further includes an output configured to provide an output signal, wherein the output signal has asymmetrical maximum and minimum voltages. The output signal is generated in response to the input signal. The output signal is applied to drive a gate terminal of a SiC MOSFET.

A level shifting circuit has an input configured to receive an input signal, wherein the input signal has symmetrical maximum and minimum voltages. The level shifting circuit further includes an output configured to provide an output signal, wherein the output signal has asymmetrical maximum and minimum voltages. The output signal is generated in response to the input signal. The output signal is applied to drive a gate terminal of a SiC MOSFET.

A level shifting circuit has an input configured to receive an input signal, wherein the input signal has symmetrical maximum and minimum voltages. The level shifting circuit further includes an output configured to provide an output signal, wherein the output signal has asymmetrical maximum and minimum voltages. The output signal is generated in response to the input signal. The output signal is applied to drive a gate terminal of a SiC MOSFET.

A level shifting circuit has an input configured to receive an input signal, wherein the input signal has symmetrical maximum and minimum voltages. The level shifting circuit further includes an output configured to provide an output signal, wherein the output signal has asymmetrical maximum and minimum voltages. The output signal is generated in response to the input signal. The output signal is applied to drive a gate terminal of a SiC MOSFET.

An on-chip true noise generator including an embedded noise source with a low-voltage, high-noise zener diode(s), and an in-situ close-loop zener diode power control circuit. The present invention proposes the use of heavily doped polysilicon and silicon p-n diode(s) structures to minimize the breakdown voltage, increasing noise level and improving reliability. The present invention also proposes an in-situ close-loop zener diode control circuit to safe-guard the zener diode from catastrophic burn-out.