An electric power supply system for a Hall effect electric thruster. The Hall effect electric thruster includes an anode, a cathode, a heater for the cathode and an igniter. The electric power supply system includes a first power supply source to power the anode, a second power supply source to power the heater and a power supply unit to electrically supply the igniter. The power supply unit includes a third power supply source and a passive electric circuit. The third power supply source powers the passive electric circuit and is configured to generate a voltage in the form of at least one pulse.

A pulse generation device includes a substrate, a spin injector provided on the substrate and made of a ferromagnetic body, a spin rotor provided on the substrate, made of a ferromagnetic body, and having magnetic anisotropy in which a direction of a first axis becomes an easy axis of magnetization, a channel portion made of a nonmagnetic body, and joined with the spin injector and the spin rotor directly or via an insulating layer, and a generating portion configured to generate a pulse by detecting, when a magnetic moment of the spin rotor is reversed from a state in which the magnetic moment faces one side of the first axis to a state in which the magnetic moment faces the other side of the first axis, a state in which the magnetic moment of the spin rotor faces a direction along a second axis orthogonal to the first axis.

A pulse generation device includes a substrate, a spin injector provided on the substrate and made of a ferromagnetic body, a spin rotor provided on the substrate, made of a ferromagnetic body, and having magnetic anisotropy in which a direction of a first axis becomes an easy axis of magnetization, a channel portion made of a nonmagnetic body, and joined with the spin injector and the spin rotor directly or via an insulating layer, and a generating portion configured to generate a pulse by detecting, when a magnetic moment of the spin rotor is reversed from a state in which the magnetic moment faces one side of the first axis to a state in which the magnetic moment faces the other side of the first axis, a state in which the magnetic moment of the spin rotor faces a direction along a second axis orthogonal to the first axis.

Loss tangents in microwave dielectric materials may be modified (increased and/or reduced), particularly at cryogenic temperatures, via application of external magnetic fields. Exemplary electrical devices, such as resonators, filters, amplifiers, mixers, and photonic detectors, configured with dielectric components having applied magnetic fields may achieve improvements in quality factor and/or modifications in loss tangent exceeding two orders of magnitude.

Circuits are provided for modeling and characterizing the switching of magnetic tunnel junctions (MTJ) elements. More specifically, ring oscillators loaded with MTJ elements are used to characterize magnetic tunnel junction (MTJ) element performance. The circuits can include a ring oscillator (RO) having an odd number of inverters connected in series with a magnetic tunnel junction (MTJ) element inserted between each inverter. In some embodiments, the magnetic tunnel junction (MTJ) elements are arranged to act as a load to the inverters. The circuits optionally include one or more of a time to amplitude converter, a pulse distribution analyzer and/or PFET(s) and NFET(s). Methods of characterizing the switching characteristics of MTJ elements are also provided herein. Such MTJ elements can be suitable for use in magnetoresistive random access memory (MRAM) devices. Methods of making the ring oscillator are further provided herein.

Circuits are provided for modeling and characterizing the switching of magnetic tunnel junctions (MTJ) elements. More specifically, ring oscillators loaded with MTJ elements are used to characterize magnetic tunnel junction (MTJ) element performance. The circuits can include a ring oscillator (RO) having an odd number of inverters connected in series with a magnetic tunnel junction (MTJ) element inserted between each inverter. In some embodiments, the magnetic tunnel junction (MTJ) elements are arranged to act as a load to the inverters. The circuits optionally include one or more of a time to amplitude converter, a pulse distribution analyzer and/or PFET(s) and NFET(s). Methods of characterizing the switching characteristics of MTJ elements are also provided herein. Such MTJ elements can be suitable for use in magnetoresistive random access memory (MRAM) devices. Methods of making the ring oscillator are further provided herein.

Circuits are provided for modeling and characterizing the switching of magnetic tunnel junctions (MTJ) elements. More specifically, ring oscillators loaded with MTJ elements are used to characterize magnetic tunnel junction (MTJ) element performance. The circuits can include a ring oscillator (RO) having an odd number of inverters connected in series with a magnetic tunnel junction (MTJ) element inserted between each inverter. In some embodiments, the magnetic tunnel junction (MTJ) elements are arranged to act as a load to the inverters. The circuits optionally include one or more of a time to amplitude converter, a pulse distribution analyzer and/or PFET(s) and NFET(s). Methods of characterizing the switching characteristics of MTJ elements are also provided herein. Such MTJ elements can be suitable for use in magnetoresistive random access memory (MRAM) devices. Methods of making the ring oscillator are further provided herein.