Disclosed embodiments relate to sensing states and changes of states of a signal and sensors for the same, including but not limited to, autonomous sensors. Such sensor may include an analog signal threshold detection circuit, a state detection circuit, and a measurement circuit. The analog signal threshold detection circuit may be configured to alternately assert and de-assert a threshold detected indication in response to an input signal and a state thereof. The state detection circuit may be configured to generate a signal state indication about a state of the input signal. The measurement circuit may be configured to generate a measurement in response to assertions of the threshold detected indication and the signal state indication, such as a count, a slew rate, or a frequency. In some embodiments, disclosed sensors may have programmable thresholds for sensing the signal states and changes therein.

Disclosed embodiments relate to sensing states and changes of states of a signal and sensors for the same, including but not limited to, autonomous sensors. Such sensor may include an analog signal threshold detection circuit, a state detection circuit, and a measurement circuit. The analog signal threshold detection circuit may be configured to alternately assert and de-assert a threshold detected indication in response to an input signal and a state thereof. The state detection circuit may be configured to generate a signal state indication about a state of the input signal. The measurement circuit may be configured to generate a measurement in response to assertions of the threshold detected indication and the signal state indication, such as a count, a slew rate, or a frequency. In some embodiments, disclosed sensors may have programmable thresholds for sensing the signal states and changes therein.

A circuit and method for digital controlling the slew rate of load voltage are provided. The circuit is comprised of a digital slew-rate control unit that utilizes a feedback signal to generate control signals where the feedback signal indicates the observed rate of voltage change on the load. The circuit is further comprised of a load driver circuit that is operated by the control signals and provides a slew-rate controlled output voltage used to operate a load switch, where the load switch provides power to the load. The circuit is configured to operate the load switch using a slew-rate controlling driver, depending on the state of the load switch transition, and a non-controlling driver.

A damping circuit having an input terminal and an output terminal is described. The damping circuit comprises a driver having an input and an output; an RC circuit coupled between the input terminal and the output; and a resistor coupled between the output and the output terminal, wherein the RC circuit delays passing a signal from the output terminal to the input terminal and a low impedance associated with the driver generally reduces ringing.

A damping circuit having an input terminal and an output terminal is described. The damping circuit comprises a driver having an input and an output; an RC circuit coupled between the input terminal and the output; and a resistor coupled between the output and the output terminal, wherein the RC circuit delays passing a signal from the output terminal to the input terminal and a low impedance associated with the driver generally reduces ringing.

An integrated circuit includes a first metal-insulator-semiconductor capacitor, a second metal-insulator-semiconductor capacitor, and a metal-insulator-metal capacitor. A first terminal of the first metal-insulator-semiconductor capacitor is configured to receive a first reference voltage for a higher voltage domain, while a first terminal of the second metal-insulator-semiconductor capacitor is configured to receive a second reference voltage for the higher voltage domain. A second terminal of the first metal-insulator-semiconductor capacitor is conductively connected to a first terminal of the metal-insulator-metal capacitor, while a second terminal of the second metal-insulator-semiconductor capacitor is conductively connected to a second terminal of the metal-insulator-metal capacitor. The first terminal of the metal-insulator-metal capacitor is configured to receive a first supply voltage for a lower voltage domain, and the first terminal of the second metal-insulator-semiconductor capacitor is configured to receive a second supply voltage for the lower voltage domain.

A CMOS all-digital pulse-mixing device includes a plurality of homogeneous logic elements serially connected to form a basic element sequence, an odd-positioned element parallel connection set and an even-positioned element parallel connection set. The basic element sequence includes odd combination positions and even combination positions. The odd-positioned element parallel connection set serially connects with one of the odd combination positions and the even-positioned element parallel connection set serially connects with one of the even combination positions. The odd-positioned element parallel connection set and the even-positioned element parallel connection set are provided to stretch or shrink a pulse mixture, which is distinguished from a conventional full-customized pulse-mixing device.

A CMOS all-digital pulse-mixing device includes a plurality of homogeneous logic elements serially connected to form a basic element sequence, an odd-positioned element parallel connection set and an even-positioned element parallel connection set. The basic element sequence includes odd combination positions and even combination positions. The odd-positioned element parallel connection set serially connects with one of the odd combination positions and the even-positioned element parallel connection set serially connects with one of the even combination positions. The odd-positioned element parallel connection set and the even-positioned element parallel connection set are provided to stretch or shrink a pulse mixture, which is distinguished from a conventional full-customized pulse-mixing device.

Embodiments relate to a frequency generator. The frequency generator comprises a quantization device configured to synthesize a carrier signal with a desired frequency characterized by a series of phase transitions at desired time instants, by approximating a phase transition at a desired time instant with a phase transition at a quantized effective time instant. The frequency generator further comprises a noise shaper configured to provide a noise-shaped feedback signal using the desired time instant and the effective time instant. Moreover, the frequency generator comprises an error generator configured to cause an error component within the effective time instant, the error component being at least 50 percent of a temporal quantization unit.

A semiconductor device includes an amplifier, a slew rate regulating circuit, a detection circuit, and a control circuit. The amplifier is configured to amplify an input signal. The slew rate regulating circuit is configured to regulate the slew rate of the input signal. The detection circuit is configured to detect the slew rate of the input signal along a signal path of the input signal between the slew rate regulating circuit and the amplifier. The control circuit is configured to control the slew rate regulating circuit based on a detection result of the detection circuit.