A target voltage circuit for fast voltage switching is provided. The target voltage circuit is configured to generate a time-variant target voltage(s) to thereby cause a power management circuit to generate a time-variant voltage(s) for a power amplifier circuit. In embodiments disclosed herein, the target voltage circuit receives a number of data signals (e.g., from a transceiver circuit via a parallel bus) that collectively represent a digital target voltage word and maps the digital target voltage word to a target voltage(s). By receiving the digital target voltage word corresponding to the target voltage(s) via the parallel bus, as opposed to directly receiving the target voltage(s) via a serial bus, it is possible to reduce transmission delay. As a result, the power management circuit will be able to switch the time-variant voltage(s) from one voltage level to another based on the target voltage(s) within a defined temporal limit.

A semiconductor device includes a semiconductor layer, a first conductor disposed on the semiconductor layer, a second conductor disposed on the semiconductor layer so as to be separated from the first conductor, a relay portion that is formed on the semiconductor layer so as to straddle the first conductor and the second conductor and that is made of a semiconductor having a first conductivity type region and a second conductivity type region, a first contact by which the first conductivity type region and the second conductivity type region are electrically connected to the first conductor, and a second contact that electrically connects the first conductivity type region of the relay portion and the second conductor together and that is insulated from the second conductivity type region.

A short-circuit detector detects an arm short circuit or a load short circuit, based on the magnitude of the gate current and the magnitude of the gate charge amount. The short-circuit detector includes: a gate current determinator that compares the magnitude of the gate current with at least one reference value; a gate charge amount determinator that compares the magnitude of the gate charge amount with at least one reference value; and a short-circuit detection logical operation circuitry that executes a logical operation of an output signal of the gate current determinator and an output signal of the gate charge amount determinator.

A controller controls multiple parallel-coupled power transistors. A correction amount calculation unit generates a reference value based on multiple detection values, each of which has a correlation with the switching loss of corresponding one of the multiple power transistors, and generates multiple correction amounts such that the multiple detection values approach the reference value. A gate signal generating unit generates multiple gate signals based on a control instruction and the multiple correction amounts.

A radio frequency (RF) switch includes a switchable RF path including a plurality of transistors coupled in series; a gate bias network including a plurality of resistors, wherein the gate bias network is coupled to each of the plurality of transistors in the switchable RF path; and a bypass network including a first plurality of transistors coupled in parallel to each of the plurality of transistors in the switchable RF path and a second plurality of transistors coupled in parallel to each of the plurality of resistors in the gate bias network.

An improved gate driver using a microcontroller (uC), a voltage selector (VS), an adjustable voltage regulator (AVR), and an auxiliary current sinking circuit (ACSC) to actively provide selectable drive signals either higher, lower or equal to the basic on voltage and off voltage drive signals for a selected semiconductor device thereby providing an active voltage-mode gate driver for actively speeding up or slowing both the on time and off time transitions of a semiconductor.

A method of operating a driver circuit includes receiving a data signal at a first input of an amplification circuit; amplifying, using the amplification circuit, the data signal to produce an output signal through an output pin; attenuating, using a feedback network, the output signal to produce a feedback signal; coupling the feedback signal to a second input of the amplification circuit; detecting, using a control circuit, a fault condition; and decoupling, responsive to detecting the fault condition, the feedback signal from the second input of the amplification circuit. In some embodiments, the driver circuit transmits a fault condition signal to an electronic control unit of an automobile.

A power converter includes a transformer having a primary-side winding connected to a switch, and a controller connected to a gate node of the switch. The controller includes a switch timing and control module to generate switch control pulses, a gate driver to receive the switch control pulses and generate gate control pulses therefrom to control the switch, and a gate drive controller to provide a switch transition speed control signal to the gate driver to control a switch transition speed of the switch for each pulse of the gate control pulses. Based on an operating mode of the power converter, the gate drive controller is configured to set the switch transition speed of the gate driver to a first speed for generating an initial gate control pulse and to set the switch transition speed of the gate driver to a second speed for generating subsequent gate control pulses.

A radio frequency (RF) switch includes a switchable RF path including a plurality of transistors coupled in series; a gate bias network including a plurality of resistors, wherein the gate bias network is coupled to each of the plurality of transistors in the switchable RF path; and a bypass network including a first plurality of transistors coupled in parallel to each of the plurality of transistors in the switchable RF path and a second plurality of transistors coupled in parallel to each of the plurality of resistors in the gate bias network.

A gate driver system includes a gate driver circuit coupled to a gate terminal of a transistor and configured to generate an on-current during a plurality of turn-on switching events to turn on the transistor, wherein the gate driver circuit includes a first driver configured to source a first portion of the on-current to the gate terminal to charge a first portion of the gate voltage and a second driver configured to, during a first boost interval, source a second portion of the on-current to the gate terminal to charge a second portion of the gate voltage; a measurement circuit configured to measure a transistor parameter indicative of an oscillation of a load current for a turn-on switching event; and a controller configured to receive the measured transistor parameter and regulate a length of the first boost interval based on the measured transistor parameter.