This application relates to a charging protection circuit. The charging protection circuit implements overcurrent protection by using a four-terminal NMOS switching transistor. In the solution provided in this application, floating management is performed on a Sub port of the four-terminal NMOS switching transistor. Specifically, when the four-terminal NMOS switching transistor is turned on, potential of the Sub port is pulled up, to avoid an excessively large internal resistance of the four-terminal NMOS switching transistor caused by an excessively large voltage between the Sub port and a drain of the four-terminal NMOS switching transistor. In addition, this application further provides a charging circuit and an electronic device.

A positive-logic FET switch stack that does not require a negative bias voltage, and which can withstand application of a high voltage RF signal without requiring terminal capacitors. Some embodiments include a stack of FET switches, with at least one FET requiring a negative V.sub.GS to turn OFF and configured so as to not require a negative voltage, series-coupled on at least one end to an end-cap FET that turns OFF when the V.sub.GS of such end-cap FET is essentially zero volts, wherein at least one end-cap FET is configured to be coupled to a corresponding RF signal source and has a gate coupled to the corresponding RF signal source through an associated switch circuit. The switch circuit may include an NMOSFET and a PMOSFET, or a diode and an NMOSFET, or a diode and an NMOSFET and a PMOSFET.

An electronic circuit is disclosed. The electronic circuit includes: a half-bridge with a first transistor device (1) and a second transistor device (1a); a first biasing circuit (3) connected in parallel with a load path of the first transistor device (1) and comprising a first electronic switch (31); a second biasing circuit (3a) connected in parallel with a load path of the second transistor device (1a) and comprising a second electronic switch (31a); and a drive circuit arrangement (DRVC). The drive circuit arrangement (DRVC) is configured to receive a first half-bridge input signal (Sin) and a second half-bridge input signal (Sina), drive the first transistor device (1) and the second electronic switch (31a) based on the first half-bridge input signal (Sin), and drive the second transistor device (1a) and the first electronic switch (31) based on the second half-bridge input signal (Sina).

A mirror clamp circuit includes a comparator having a first input terminal connectable to a first control terminal of a transistor having the first control terminal connected to the other terminal of a resistor of which one terminal is fed with an output voltage and a first terminal fed with a reference potential and a second input terminal fed with a reference voltage, a transistor switch having a second control terminal fed with a control terminal voltage based on a comparison signal output from the comparator and inserted between the first control terminal and the reference potential, an OR circuit fed with a signal based on the control terminal voltage and the output voltage, and a current feeder configured to change the amount of current fed to the comparator based on the output of the OR circuit.

A power module apparatus includes a power substrate, at least one power device electrically connected to the power substrate and a gate-source board mounted relative to the power substrate, the gate-source board electrically connected to the at least one power device, a housing secured to the power substrate, and a clamping circuit electrically connected to the at least one power device. The clamping circuit being configured to reduce a voltage charge up at a gate of the at least one power device to within 8 V of a desired voltage.

A device includes a first switch and a first diode connected in parallel between a midpoint and a first terminal of the hybrid power device, a second switch and a second diode connected in parallel between the midpoint and a second terminal of the hybrid power device, a third switch coupled between the first terminal and the second terminal, and a third diode connected between the first terminal and the second terminal.

A power switch circuit and non-volatile memory device including the same are provided. The power switch circuit includes a multi-voltage providing circuit configured to receive a first voltage and a second voltage greater than the first voltage, output a third voltage corresponding to the first voltage to a first output terminal, and output a fourth voltage corresponding to the second voltage to a second output terminal. The power switch circuit also includes a leakage current prevention circuit configured to cut off a leakage current flowing through the multi-voltage providing circuit. The multi-voltage providing circuit includes a first inverter which is driven using the second voltage. The leakage current prevention circuit is configured to cut off the leakage current flowing through the first inverter in response to both the first voltage and the second voltage being provided to the multi-voltage providing circuit.

A method of controlling a switch, including: a) applying a control signal to a control terminal of the switch, said control signal exhibiting at least one first switching between a switch turn-on control state and a switch turn-off control state; and b) applying a switch turn-off potential on said control terminal after a first delay starting at said first switching, the first delay being greater than the turn-off time.

Various embodiments may relate to a synchronous rectifier including at least one rectifier cell, to which power is supplied via a secondary winding of a transformer arranged between the input connections of the synchronous rectifier. The rectifier cell comprises a bipolar main switch operated in the inverse mode, wherein an energy store is provided in the base line of the bipolar main switch, which energy store, in conjunction with an auxiliary switch which is concomitantly controlled by the relevant secondary winding for the bipolar main switch, ensures that the main switch is switched off prior to the end of the inverse phase.

A method for operating a silicon carbide (SiC) MOSFET arrangement, The arrangement includes two or more SiC MOSFETs, which are set up such that they are connected electrically in parallel with one another, and is arranged in a device. The method comprises the step of switching on the SiC MOSFETs while avoiding overloading individual ones of the SiC MOSFETs. A device is also described which includes a SiC MOSFET arrangement that includes two or more SiC MOSFETs, which are set up such that they are connected electrically in parallel with one another, and a switch unit that is set up for switching the SiC MOSFET arrangement. The switch unit is set up for switching on the SiC MOSFETs while avoiding overloading individual ones of the SiC MOSFETs.