This invention relates to a driving circuit with electronic switches in serial connection structure, and this driving circuit includes: electronic switch module and active drive module, electronic switch module includes: n pcs electronic switches in serial connection, and n pcs electronic switches D and S terminal connected in series in turn; active drive modules includes: n pcs active drive circuits.

In this invention, the power supply and the driving pulse signal of the electronic switch K2 to Kn are obtained successively from electronic switch K1, and the electronic switch K1 to Kn is on and off in turn; The n pcs electronic switches have nanosecond level of the switching performance of the active circuit, which are suitable for the high frequency high power gate drive circuit when n pcs electronic switches series structure is used.

A power device driving apparatus drives a plurality of power devices including first and second power devices. In the apparatus, a plurality of drive circuits are separately provided for at least the first power device and the second power device and output drive signals to the respective power devices. The isolated power supply includes a first isolated power supply unit that supplies a first supply voltage, and a second isolated power supply unit that supplies a second supply voltage that is different from the first supply voltage. The plurality of drive circuits includes a first drive circuit that uses the first supply voltage supplied from the first isolated power supply unit to output the drive signal to the first power device, and a second drive circuit that uses the second supply voltage supplied from the second isolated power supply unit to output the drive signal to the second power device.

A semiconductor device includes an n type first semiconductor region in which a first parasitic diode is formed with a p type semiconductor substrate; an n type second semiconductor region in which a second parasitic diode is formed with the p type semiconductor substrate; a control circuit in the second semiconductor region outputting a gate control signal, a gate drive circuit in the second semiconductor region; a level shift circuit that converts the gate control signal to a converted gate control signal and outputs the converted gate control signal to the gate drive circuit; a diode connected to a path of a noise current caused by a negative voltage noise passing through the second parasitic diode, the diode being connected to the path in a direction opposite to a direction in which the noise current would flow; and a capacitor connected to an anode of said diode.

A switch circuit includes n switching elements (n2) connected in series between an input node and an output node. A control device is configured to convert DC power in a power storage device into AC power synchronized with AC power supplied from an AC power supply during a normal state and supply the AC power to the output node, by controlling a power converter, when an abnormality of at least one of the AC power supply and the switch circuit is sensed in a state where the control device outputs conduction commands for the n switching elements. The control device is further configured to produce cutoff commands for cutting off the n switching elements during execution of power conversion in the power converter, and sense a cutoff abnormality of the switch circuit based on terminal-to-terminal voltages of the n switching elements during production of the cutoff commands.

A high voltage switch comprising: a high voltage power supply providing power greater than about 5 kV; a control voltage power source; a plurality of switch modules arranged in series with respect to each other each of the plurality of switch modules configured to switch power from the high voltage power supply, and an output configured to output a pulsed output signal having a voltage greater than the rating of any switch of the plurality of switch modules, a pulse width less than 2 s, and at a pulse frequency greater than 10 kHz.

A high voltage switch comprising: a high voltage power supply providing power greater than about 5 kV; a control voltage power source; a plurality of switch modules arranged in series with respect to each other each of the plurality of switch modules configured to switch power from the high voltage power supply, and an output configured to output a pulsed output signal having a voltage greater than the rating of any switch of the plurality of switch modules, a pulse width less than 2 s, and at a pulse frequency greater than 10 kHz.

A power device driving apparatus drives a plurality of power devices including first and second power devices. In the apparatus, a plurality of drive circuits are separately provided for at least the first power device and the second power device and output drive signals to the respective power devices. The isolated power supply includes a first isolated power supply unit that supplies a first supply voltage, and a second isolated power supply unit that supplies a second supply voltage that is different from the first supply voltage. The plurality of drive circuits includes a first drive circuit that uses the first supply voltage supplied from the first isolated power supply unit to output the drive signal to the first power device, and a second drive circuit that uses the second supply voltage supplied from the second isolated power supply unit to output the drive signal to the second power device.

A serial IGBT voltage equalization method and system based on an auxiliary voltage source is disclosed. The method includes the following steps. (1) Detect a port dynamic voltage of each serial IGBT. (2) Perform dynamic overvoltage diagnosis respectively on the port dynamic voltage of each IGBT. (3) Supply emergency high level signal to the gate of the IGBT when there is dynamic overvoltage. (4) Stop supplying emergency high level signal to the gate of the IGBT, supply a constant voltage at the gate of the IGBT through the auxiliary voltage source. The invention provides a constant voltage through the auxiliary voltage source, prolongs the off time of the faulty IGBT, and turns off other IGBTs simultaneously, thereby achieving the purpose of serial IGBT voltage equalization.

A gate voltage control/gate resistance changing circuit (21) is accommodated in the same package (P1) as a switching element (11), and outputs a driving signal to the switching element (11) to control turning on and off of the switching element (11). When an external signal is input from outside of the package (P1) to a terminal (3c) of the package (P1), a changing unit (221) accommodated in the package (P1) changes the switching speed of the switching element (11) based on the signal.

A driving device for a semiconductor element includes: a plurality of detection circuits that detect different types of abnormalities of the semiconductor element; a logic circuit that generates an error signal when at least one of the detection circuits detects an abnormality; an alarm signal generating circuit that receives the error signal and generates an alarm signal made of one or a plurality of pulses, the alarm signal having a different pulse width for each of the detection circuits that has detected an abnormality; and a protection operation determining circuit that determines whether or not a protection function of the semiconductor element is operating based on the error signal and the alarm signal, and shuts off input of a drive signal to the semiconductor element when it is determined that the protection function is operating.