According to one aspect of embodiments, a drive circuit of a normally-ON transistor includes: a normally-OFF transistor that includes a main current path connected in serial to a main current path of the normally-ON transistor; and a buffer circuit that supplies, to a gate of the normally-ON transistor, a control signal for controlling turning ON and OFF of the normally-ON transistor, whose high-voltage side and low-voltage side are biased by a bias voltage supplied from a power source unit.

An electric circuitry for signal transmission comprises a transmission gate having an input node to apply an input signal. The transmission gate includes a first transistor having an electric conductive channel of a first type of conductivity and a second transistor having an electric conductive channel of a second type of conductivity. The electric circuitry comprises a control circuit to control the signal transmission of the transmission gate. The control circuit is configured to generate a first and second control signal to control the conductivity of the first and second transistor in dependence on a voltage level of the input signal.

A control circuit includes a detection module configured to detect an operating condition of a semiconductor switching device; a determining module configured to determine a gate allowable voltage of the semiconductor switching device based on the operating condition; and an output module configured to output a control signal to a driving power supply circuit of the semiconductor switching device based on the gate allowable voltage, to control the driving power supply circuit to provide a gate on voltage that is not higher than the gate allowable voltage and that is positively correlated with the gate allowable voltage for the semiconductor switching device. When the operating condition of the semiconductor switching device becomes better, the gate allowable voltage of the semiconductor switching device is increased.

Provided is a circuit including a switching transistor having a control terminal configured to receive a control signal and having a current flow path therethrough. The switching transistor becomes conductive in response to the control signal having a first value. The current flow path through the switching transistor provides a current flow line between two nodes. In a non-conductive state, a voltage drop stress is across the switching transistor. The circuit comprises a sense transistor that is coupled to and a scaled replica of the switching transistor. The sense transistor has a sense current therethrough. The sense current is indicative of the current of the switching transistor. The circuit includes coupling circuitry configured to apply the voltage drop stress across the sense transistor in response to the switching transistor being non-conductive. In the non-conductive state, the voltage drop stress is replicated across both the switching transistor and the sense transistor.

A circuit comprising a cascode device comprising a field effect transistor. The field effect transistor includes a common body region. The field effect transistor also includes a plurality of source regions. The source regions form inputs of the cascode device. Each source region of the plurality of source regions is separated from each other source region of the plurality of source regions by the common body region. The field effect transistor further includes a common gate. The field effect transistor also includes a common drain region. The common drain region forms an output of the cascode device. The circuit may further include a plurality of groups of one or more current sources each group coupled to a respective one of the inputs of the cascode device, and a current output coupled to the output of the cascode device. A method of operating a current source circuit.

Disclosed herein is an apparatus that includes a first reference voltage generator configured to generate a first voltage, a second reference voltage generator configured to generate a second voltage, a detection circuit configured to compare the first voltage with the second voltage to generate a selection signal, and a selection circuit configured to select one of the first and second voltages responsive to the selection signal. The detection circuit is configured to have a hysteresis property in changing a state of the selection signal.

Embodiments of the disclosure include a switch having an on-state resistance that varies based on a temperature coefficient of the switch and an overcurrent protection circuit coupled to the switch and having an adjustable overcurrent threshold level determined based on an adjustable voltage generated by the overcurrent protection circuit, the adjustable voltage generated based on the temperature coefficient of the switch.

An electronic device includes a GaN power FET, a GaN driver coupled to the GaN power FET and a gate bias circuit coupled to the GaN driver. The GaN power FET and the GaN driver are monolithically integrated on a single GaN die. The gate bias circuit is predominately monolithically integrated on the single GaN die and includes only one active component external to the single GaN die. In one embodiment, the only active component external to the single GaN die is a linear regulator. In another embodiment, the only active component external to the single GaN die is a shunt regulator. In yet another embodiment, the only active component external to the single GaN die is a Zener diode.

Disclosed is an integrated circuit including a first bias current generating circuit. The first bias current generating circuit includes a first amplifier receiving a reference voltage and a first voltage and amplifying a difference between them to output a first output voltage, a first bias current generator receiving the first output voltage and outputting a first bias current in response to the first output voltage, a variable resistor receiving the first bias current and outputting the first voltage in response to the first bias current and a calibration code, a second bias current generator receiving the first output voltage and outputting a second bias current to a peripheral circuit in response to the first output voltage, and a third bias current generator receiving the first output voltage and outputting a third bias current to an external device through a first pad in response to the first output voltage.

A method for driving an output node includes driving a control node of an output device coupled to the output node according to an input signal and using a fixed regulated voltage and a variable regulated voltage. The method includes generating the fixed regulated voltage based on a first power supply voltage, a second power supply voltage, and a first reference voltage. The method includes generating the variable regulated voltage based on the first power supply voltage, the second power supply voltage, and a second reference voltage. The method includes generating the second reference voltage based on the first power supply voltage, the second power supply voltage, a reference current, and a predetermined target voltage level of the control node of the output device. In an embodiment of the method, generating the second reference voltage includes periodically calibrating the second reference voltage.