An apparatus that includes a single event latchup (SEL) recovery circuit, a microprocessor operatively connected with the SEL recovery circuit, and an output maintenance circuit that maintains a state of the microprocessor prior to a power cycle of the microprocessor. The apparatus is configured to detect a SEL event or other fault via a watchdog circuit, initiate a power cycle of the microprocessor, retain a latch state from the microprocessor, and determine whether the microprocessor was restarted due to an SEL event. Responsive to determining that the microprocessor has failed to restart due to a persistent fault, the apparatus determines whether a prepower cycle limit is reached within a predetermined span of time, and selectively provide power to a load based on the latch state and the power cycle limit determination.

A resistor network with reduced area and/or improved voltage resolution and methods of designing and operating the same are provided. Generally, the resistor network includes a resistor ladder with a first number (n) of integrated resistors coupled in series between a top and a bottom contact, with one or more contacts coupled between adjacent resistors. A second number of integrated resistors is coupled in parallel between the top and bottom contacts, and a third number of integrated resistors is coupled in series between the second integrated resistors and either the top or the bottom contact. Each of the integrated resistors has a resistance of R, and a voltage developed across each resistor in the resistor ladder is equal to a voltage applied between the top and bottom contacts divided by n. Where the second number is n-1, and the third number is 1, the total number of resistors is 2n.

A resistor network with reduced area and/or improved voltage resolution and methods of designing and operating the same are provided. Generally, the resistor network includes a resistor ladder with a first number (n) of integrated resistors coupled in series between a top and a bottom contact, with one or more contacts coupled between adjacent resistors. A second number of integrated resistors is coupled in parallel between the top and bottom contacts, and a third number of integrated resistors is coupled in series between the second integrated resistors and either the top or the bottom contact. Each of the integrated resistors has a resistance of R, and a voltage developed across each resistor in the resistor ladder is equal to a voltage applied between the top and bottom contacts divided by n. Where the second number is n-1, and the third number is 1, the total number of resistors is 2n.

A state retention circuit for retaining the state of a data storage element during a power reduction mode including a storage latch and a retention latch both powered by retention supply voltage that remains energized during a power reduction mode. The storage latch and the retention latch are both coupled to a retention node that is toggled from between first and second states before entering the power reduction mode so that the storage latch latches the state of the data storage element. The retention latch includes a retention transistor and a retention inverter powered by the retention supply voltage. The retention transistor is overpowered when the retention node is pulled to the second state in which the retention inverter quickly turns off the retention transistor. When the retention node is toggled back to the first state, the retention inverter keeps the retention transistor turned on during the power reduction mode.

A state retention circuit for retaining the state of a data storage element during a power reduction mode including a storage latch and a retention latch both powered by retention supply voltage that remains energized during a power reduction mode. The storage latch and the retention latch are both coupled to a retention node that is toggled from between first and second states before entering the power reduction mode so that the storage latch latches the state of the data storage element. The retention latch includes a retention transistor and a retention inverter powered by the retention supply voltage. The retention transistor is overpowered when the retention node is pulled to the second state in which the retention inverter quickly turns off the retention transistor. When the retention node is toggled back to the first state, the retention inverter keeps the retention transistor turned on during the power reduction mode.

A system for mitigating a solid state power controller (SSPC) open or closed state change caused by single event latchup (SEL) includes an ON circuit, an OFF circuit operatively connected in parallel to the ON circuit, a holding capacitor operatively connected in parallel with the ON circuit and the OFF circuit, and a power switching device operatively connected to the holding capacitor and the ON circuit. The system is configured to maintain, during and after the SEL, a drive state voltage to the power switching device that is stored in the holding capacitor prior to the SEL.

A system for mitigating a solid state power controller (SSPC) open or closed state change caused by single event latchup (SEL) includes an ON circuit, an OFF circuit operatively connected in parallel to the ON circuit, a holding capacitor operatively connected in parallel with the ON circuit and the OFF circuit, and a power switching device operatively connected to the holding capacitor and the ON circuit. The system is configured to maintain, during and after the SEL, a drive state voltage to the power switching device that is stored in the holding capacitor prior to the SEL.

A switch device includes a phase change switch and a memory for storing a target state of the phase change switch. A controller determines a phase state of the phase change switch, and, if the state of the phase change switch does not correspond to the target state, controls a heater of the phase change switch to change the state of the phase changes switch to the target state.

A system for mitigating a solid state power controller (SSPC) open or closed state change caused by single event latchup (SEL) includes an ON circuit, an OFF circuit operatively connected in parallel to the ON circuit, a holding capacitor operatively connected in parallel with the ON circuit and the OFF circuit, and a power switching device operatively connected to the holding capacitor and the ON circuit. The system is configured to maintain, during and after the SEL, a drive state voltage to the power switching device that is stored in the holding capacitor prior to the SEL.

A resistor network with reduced area and/or improved voltage resolution and methods of designing and operating the same are provided. Generally, the resistor network includes a resistor ladder with a first number (n) of integrated resistors coupled in series between a top and a bottom contact, with one or more contacts coupled between adjacent resistors. A second number of integrated resistors is coupled in parallel between the top and bottom contacts, and a third number of integrated resistors is coupled in series between the second integrated resistors and either the top or the bottom contact. Each of the integrated resistors has a resistance of R, and a voltage developed across each resistor in the resistor ladder is equal to a voltage applied between the top and bottom contacts divided by n. Where the second number is n1, and the third number is 1, the total number of resistors is 2n.