A switching system can include a main switching device configured to switch a voltage, a gate driver having an output coupled to a drive terminal of the main switching device and configured to deliver a drive signal to the main switching device, and a clamp circuit. The clamp circuit can be coupled to the drive terminal of the main switching device. The clamp circuit can include a logic gate configured to drive a clamp switching device coupled to and configured to clamp a voltage at the drive terminal of the main switching device. A drive signal of the clamp switching device can be substantially complementary to the main switching device drive signal. The logic gate can provide at least a portion of a delay between switching transitions of the main switching device and switching transitions of the clamp switching device.

Systems, apparatuses, and methods for implementing a high-performance clock-gating circuit are described. A first pull-down stack receives enable and pulse signals on gates of N-type transistors which pull down an output node when the enable and pulse signals are both high. A pull-up transistor coupled to the output node receives a clock signal which turns off the pull-up transistor when the clock signal is high. A first pull-up stack receives the inverted pulse signal and the enable signal on gates of P-type transistors to cause the output node to be high when the enable signal and inverted pulse signal are low. A second pull-up stack maintains a high voltage on the output node after the pulse event has ended but while the clock signal is still high. A second pull-down stack maintains a low voltage on the output node after the pulse event but while the clock remains high.

Systems, apparatuses, and methods for implementing a high-performance clock-gating circuit are described. A first pull-down stack receives enable and pulse signals on gates of N-type transistors which pull down an output node when the enable and pulse signals are both high. A pull-up transistor coupled to the output node receives a clock signal which turns off the pull-up transistor when the clock signal is high. A first pull-up stack receives the inverted pulse signal and the enable signal on gates of P-type transistors to cause the output node to be high when the enable signal and inverted pulse signal are low. A second pull-up stack maintains a high voltage on the output node after the pulse event has ended but while the clock signal is still high. A second pull-down stack maintains a low voltage on the output node after the pulse event but while the clock remains high.

A driver circuit includes a first deglitcher circuit that delays a rising edge or a falling edge of an input signal according to a mode control signal and supplies a first output signal. A second deglitcher circuit receives the first output signal and delays either a rising edge or a falling edge of the first output signal by a second delay according to the mode control signal and supplies a second output signal. Logic gates combine the first and second output signals to supply gate control signals for output transistors to drive the driver circuit output. A sum of the first delay and the second delay determines the total deglitch time defining a pulse width of pulses that are suppressed by the driver circuit and the second delay determines a non-overlap time. The non-overlap time overlaps in time with the total deglitch time.

A hybrid transistor circuit is disclosed for use in III-Nitride (III-N) semiconductor devices, comprising a Silicon (Si)-based Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET), a Group III-Nitride (III-N)-based Field-Effect Transistor (FET), and a driver unit. A source terminal of the III-N-based FET is connected to a drain terminal of the Si-based MOSFET. The driver unit has at least one input terminal, and two output terminals connected to the gate terminals of the transistors respectively. The hybrid transistor circuit is turned on through the driver unit by switching on the Silicon-based MOSFET first before switching on the III-N-based FET, and is turned off through the driver unit by switching off the III-N-based FET before switching off the Silicon-based MOSFET. Also disclosed are integrated circuit packages and semiconductor structures for forming such hybrid transistor circuits. The resulting hybrid circuit provides power-efficient and robust use of III-Nitride semiconductor devices.

An on-chip clock controller includes a primary clock gating cell and a secondary clock gating cell. The primary clock gating cell includes a first clock input terminal coupled to receive an input clock signal and a first enable input terminal coupled to receive an enable signal. The primary clock gating cell also include a first clock output terminal configured to generate a first output clock signal based at least in part on the input clock signal and the enable signal. The secondary clock gating includes a second clock input terminal coupled to receive the input clock signal and a second clock output terminal configured to generate a second output clock signal based at least in part on the input clock signal. The enable signal is based at least in part on the second output clock signal.

An on-chip clock controller includes a primary clock gating cell and a secondary clock gating cell. The primary clock gating cell includes a first clock input terminal coupled to receive an input clock signal and a first enable input terminal coupled to receive an enable signal. The primary clock gating cell also include a first clock output terminal configured to generate a first output clock signal based at least in part on the input clock signal and the enable signal. The secondary clock gating includes a second clock input terminal coupled to receive the input clock signal and a second clock output terminal configured to generate a second output clock signal based at least in part on the input clock signal. The enable signal is based at least in part on the second output clock signal.

A hybrid switch apparatus includes a gate drive circuit producing a gate drive signal, a GaN high electron mobility transistor (HEMT) having a first gate, a first drain, and a first source. A silicon (Si) MOSFET has a second gate, a second drain, and a second source. The GaN HEMT and the Si MOSFET are connected in a parallel arrangement so that (i) the first drain and the second drain are electrically connected and (ii) the first source and the second source are electrically connected. The second gate is connected to the gate drive circuit output to receive the gate drive signal. A delay block has an input connected to the gate drive circuit output and an delay block output is configured to produce a delayed gate drive signal for driving the GaN HEMT.

A hybrid switch apparatus includes a gate drive circuit producing a gate drive signal, a GaN high electron mobility transistor (HEMT) having a first gate, a first drain, and a first source. A silicon (Si) MOSFET has a second gate, a second drain, and a second source. The GaN HEMT and the Si MOSFET are connected in a parallel arrangement so that (i) the first drain and the second drain are electrically connected and (ii) the first source and the second source are electrically connected. The second gate is connected to the gate drive circuit output to receive the gate drive signal. A delay block has an input connected to the gate drive circuit output and an delay block output is configured to produce a delayed gate drive signal for driving the GaN HEMT.

Methods, systems, and devices for controlling a variable capacitor. One aspect features a variable capacitance device that includes a capacitor, a first transistor, a second transistor, and control circuitry. The control circuitry is configured to adjust an effective capacitance of the capacitor by performing operations including detecting a zero-crossing of an input current at a first time. Switching off the first transistor. Estimating a first delay period for switching the first transistor on when a voltage across the capacitor is zero. Switching on the first transistor after the first delay period from the first time. Detecting a zero-crossing of the input current at a second time. Switching off the second transistor. Estimating a second delay period for switching the second transistor on when a voltage across the capacitor is zero. Switching on the second transistor after the second delay period from the second time.