A comparator circuit configured to output an output voltage at a first logic level, upon an input voltage exceeding a first threshold voltage, and output the output voltage at a second logic level, upon the input voltage dropping below a second threshold voltage lower than the first threshold voltage. The comparator circuit includes a converter circuit configured to convert the input voltage of the comparator circuit into a first voltage and a second voltage lower than the first voltage, and a logic circuit configured to output a voltage, as the output voltage of the comparator circuit, that is at the first logic level, upon the first voltage exceeding a third threshold voltage, and at the second logic level, upon the second voltage dropping below a fourth threshold voltage lower than the third threshold voltage.

An alternator and a rectifier thereof are provided. The rectifier includes a transistor and a gate voltage control circuit. The transistor is controlled by a gate voltage. The gate voltage control circuit generates the gate voltage according to a voltage difference between an input voltage and a rectified voltage. During a first time interval after the voltage difference drops to a first preset threshold voltage, the gate voltage control circuit determines whether the voltage difference is less than a second preset threshold voltage, and decides whether to provide the gate voltage to turn on the transistor. When the transistor is turned on, the voltage difference substantially equals to a first reference voltage. And during a second time interval, the gate voltage control circuit regulates the gate voltage to set the voltage difference substantially to a second reference voltage.

A solid-state relay includes a semiconductor switch and a voltage boost block. The semiconductor switch has a control input, which causes the semiconductor switch to shift from an open, non-conducting position to a closed, conducting position when a voltage is applied to the control input. The voltage boost block includes a boost converter and a ground connector. A voltage output of the semiconductor switch is electrically connected to a voltage input of the boost converter. A voltage output of the boost converter is electrically connected to the control input. The ground connector of the boost converter is electrically connected to a voltage input of the semiconductor switch When the semiconductor switch is in the closed position, the semiconductor switch is maintained in a closed position in the absence of another control signal.

An electrostatic protection circuit for a chip including a power supply pad and a ground pad, the electrostatic protection circuit includes: a monitoring assembly, configured to generate a trigger signal when an electrostatic pulse is present on the power supply pad; a discharge transistor connected between the power pad and the ground pad and configured to be turned on under control of the trigger signal to discharge electrostatic charges to the ground pad; and a control circuit connected to the monitoring assembly and configured to control a duration of the trigger signal generated by the monitoring assembly.

Embodiments herein relate to protection of a standby amplifier of a memory device. Specifically, an input voltage of the standby amplifier may be reduced to decrease an occurrence of damage to the standby amplifier or components thereof. In some embodiments, the input voltage may be reduced using a voltage divider that provides the reduced input voltage to the standby amplifier during a power up operation. Upon completion of the power up operation, the input voltage of the standby amplifier may return to an operating voltage. The reduced input voltage may reduce the occurrence of damage to the standby amplifier by maintaining a gate to drain voltage of one or more transistors of the standby amplifier below a maximum.

A selection circuit architecture makes it possible to perform upward and/or downward transitions in sets of sequences of slow and fast phases so as at the same time to solve the problems of inductive switching noise and the problems of currents in the supply rails. This solution has multiple advantages linked to the ease of implementation and flexibility of configurations that are possible for adapting to the specific constraints when designing the circuit.

Embodiments herein relate to protection of a standby amplifier of a memory device. Specifically, an input voltage of the standby amplifier may be reduced to decrease an occurrence of damage to the standby amplifier or components thereof. In some embodiments, the input voltage may be reduced using a voltage divider that provides the reduced input voltage to the standby amplifier during a power up operation. Upon completion of the power up operation, the input voltage of the standby amplifier may return to an operating voltage. The reduced input voltage may reduce the occurrence of damage to the standby amplifier by maintaining a gate to drain voltage of one or more transistors of the standby amplifier below a maximum.

The present disclosure provides a switching current source circuit and a method for quickly establishing a switching current source. The switching current source circuit includes a first and a second switching current source branches connected in parallel with one end of a load. When the switching enable signal is switched, due to the charge coupling of the first and second switching current source branches, the bias voltage respectively generates bounce in the same direction as and a direction opposite to the transition direction of the switching enable signal. The two bounces cancel each other to make the current source bias voltage recover quickly when a toggle event happens. The present disclosure accelerates the establishment of current through the coupling of charges, and reduces the decoupling capacitance at the same time, thereby reducing the circuit area and saving the costs.

In a semiconductor device capable of product-sum operation, variations in transistor characteristics are reduced. The semiconductor device includes a first circuit including a driver unit, a correction unit, and a holding unit, and an inverter circuit. The first circuit has a function of generating an inverted signal of a signal input to an input terminal of the first circuit and outputting the inverted signal to an output terminal of the first circuit. The driver unit includes a p-channel first transistor and an n-channel second transistor having a back gate. The correction unit has a function of correcting the threshold voltage of one or both of the first transistor and the second transistor. The holding unit has a function of holding the potential of the back gate of the second transistor. The output terminal of the first circuit is electrically connected to an input terminal of the inverter circuit. The time from the input of a signal to the input terminal of the first circuit to the output of a signal from an output terminal of the inverter circuit depends on the potential of the back gate of the second transistor.

The disclosure relates to power semiconductor devices in GaN technology. The disclosure proposes an integrated auxiliary (double) gate terminal and a pulldown network to achieve a normally-off (E-Mode) GaN transistor with threshold voltage higher than 2V, low gate leakage current and enhanced switching performance. The high threshold voltage GaN transistor has a high-voltage active GaN device and a low-voltage auxiliary GaN device wherein the high-voltage GaN device has the gate connected to the source of the integrated auxiliary low-voltage GaN transistor and the drain being the external high-voltage drain terminal and the source being the external source terminal, while the low-voltage auxiliary GaN transistor has the gate (first auxiliary electrode) connected to the drain (second auxiliary electrode) functioning as an external gate terminal. In other embodiments a pull-down network for the switching-off of the high threshold voltage GaN transistor is formed by additional auxiliary low-voltage GaN transistors and resistive elements connected in parallel or in series with the low-voltage auxiliary GaN transistor.