Patent classifications
H03K17/90
KNOB SCREEN DEVICE
The knob screen device includes a glass touch cover plate, a display screen, a screen support frame, a semi-transparent turning structure, an annular light-leading friction shim, at least one battery, a mainboard and a magnetic attraction assembly. The knob screen device further comprises: at least one Hall sensor provided on the mainboard; at least one multicolor LED ambient light provided on the mainboard; and at least one annular multipolar flexible magnet provided in the semi-transparent turning structure. The semi-transparent turning structure is connected to external component by means of the magnetic attraction assembly. In this way, the knob screen device is simple in structure, low in cost, easy to process and install and more flexible in application circumferences.
KNOB SCREEN DEVICE
The knob screen device includes a glass touch cover plate, a display screen, a screen support frame, a semi-transparent turning structure, an annular light-leading friction shim, at least one battery, a mainboard and a magnetic attraction assembly. The knob screen device further comprises: at least one Hall sensor provided on the mainboard; at least one multicolor LED ambient light provided on the mainboard; and at least one annular multipolar flexible magnet provided in the semi-transparent turning structure. The semi-transparent turning structure is connected to external component by means of the magnetic attraction assembly. In this way, the knob screen device is simple in structure, low in cost, easy to process and install and more flexible in application circumferences.
METHOD FOR CONTROLLING AND REGULATING A MACHINE TOOL AND HANDLE FOR MACHINE TOOL
Method for the open-loop and closed-loop control of a power tool, in particular a chipping hammer, having a drive, a control device, a sensor device, a transmission device and a handle apparatus, wherein the handle apparatus contains a lever element with a signal transmitter, said lever element being pivotable relative to the sensor device. The method includes: sensing a first and second position of the signal transmitter by the sensor device; determining an acceleration of the signal transmitter from the first position to the second position by the control device; setting a first rotational speed for the drive by the control device for the output of a first impact energy value of the transmission device when the determined acceleration reaches a first predetermined threshold value or setting a second rotational speed for the drive by the control device for the output of a second impact energy value of the transmission device when the determined acceleration reaches a second predetermined threshold value. A handle apparatus on a power tool, in particular a chipping hammer, is also provided.
Electronic power switch drive module
An electronic power switch drive module for a power semiconductor unit, comprising a gate drive and a current transducer mounted on one or more circuit boards, the gate drive comprising at least one circuit portion for controlling at least one transistor of a power semiconductor module of said power semiconductor unit, the current transducer configured to be coupled to an output of the power semiconductor module for measuring an output current of the power semiconductor module, said at least one circuit portion connected to an output potential of the output current to be measured. The current transducer comprises at least one magnetic field sensor, the current transducer being connected to said at least one circuit portion of the gate drive at said output potential in a non-isolated manner.
Electronic power switch drive module
An electronic power switch drive module for a power semiconductor unit, comprising a gate drive and a current transducer mounted on one or more circuit boards, the gate drive comprising at least one circuit portion for controlling at least one transistor of a power semiconductor module of said power semiconductor unit, the current transducer configured to be coupled to an output of the power semiconductor module for measuring an output current of the power semiconductor module, said at least one circuit portion connected to an output potential of the output current to be measured. The current transducer comprises at least one magnetic field sensor, the current transducer being connected to said at least one circuit portion of the gate drive at said output potential in a non-isolated manner.
Magnetoresistive relay
A magnetoresistive relay, comprising a substrate, a magnetic excitation coil, a magnetoresistive sensor, and switch integrated circuit which are placed on a substrate, which further includes an excitation signal input electrode, an excitation signal output electrode, a switch circuit positive output electrode, a switch circuit negative output electrode, a power input electrode, and a ground electrode. The ends of the magnetic excitation coil are each connected with the excitation signal input electrode and the excitation signal output electrodes. The signal from the magnetoresistive sensor is sent to the switch integrated circuit. The positive switch circuit output electrode and the switch circuit negative electrode are respectively connected with the switch integrated circuit. The power input ends and the ground ends of the switch integrated circuit and the magnetoresistive sensor are respectively connected with the power input electrode and the ground electrode. During operation, the magnetic field from the excitation coil provides an on/off signal, and this signal is used to change the magnetoresistance of the magnetoresistive sensor, the switch integrated circuit receives the signal from the magnetoresistive sensor, and from this the external output switching action is realized. This magnetoresistive relay is easy to operate, and it has low power consumption, small size, and long life span.
Magnetoresistive relay
A magnetoresistive relay, comprising a substrate, a magnetic excitation coil, a magnetoresistive sensor, and switch integrated circuit which are placed on a substrate, which further includes an excitation signal input electrode, an excitation signal output electrode, a switch circuit positive output electrode, a switch circuit negative output electrode, a power input electrode, and a ground electrode. The ends of the magnetic excitation coil are each connected with the excitation signal input electrode and the excitation signal output electrodes. The signal from the magnetoresistive sensor is sent to the switch integrated circuit. The positive switch circuit output electrode and the switch circuit negative electrode are respectively connected with the switch integrated circuit. The power input ends and the ground ends of the switch integrated circuit and the magnetoresistive sensor are respectively connected with the power input electrode and the ground electrode. During operation, the magnetic field from the excitation coil provides an on/off signal, and this signal is used to change the magnetoresistance of the magnetoresistive sensor, the switch integrated circuit receives the signal from the magnetoresistive sensor, and from this the external output switching action is realized. This magnetoresistive relay is easy to operate, and it has low power consumption, small size, and long life span.
FERROELECTRIC OPENING SWITCH
A ferroelectric opening switch is enabled by controlled polarization switching via nucleation in a ferroelectric material, such as BaTiO.sub.3, Pb(Zr,Ti)O.sub.3, LiNbO.sub.3, LiTaO.sub.3, or variants thereof. For example, nucleation sites can be provided by mechanical seeding, grain boundaries, or optical illumination. The invention can be used as an opening switch in large scale pulsed-power systems. However, the switch can also be used in compact pulsed-power systems (e.g., as drivers for high power microwave systems), as passive fault limiters for high voltage dc (HVDC) systems, and/or in other high power applications.
Ferroelectric opening switch
A ferroelectric opening switch is enabled by controlled polarization switching via nucleation in a ferroelectric material, such as BaTiO.sub.3, Pb(Zr,Ti)O.sub.3, LiNbO.sub.3, LiTaO.sub.3, or variants thereof. For example, nucleation sites can be provided by mechanical seeding, grain boundaries, or optical illumination. The invention can be used as an opening switch in large scale pulsed-power systems. However, the switch can also be used in compact pulsed-power systems (e.g., as drivers for high power microwave systems), as passive fault limiters for high voltage dc (HVDC) systems, and/or in other high power applications.
Nanosecond-timescale low-error switching of 3-terminal magnetic tunnel junction circuits through dynamic in-plane-field assisted spin-hall effect
The disclosed technology provides various implementations of a device based on a spin Hall effect (SHE) and spin transfer torque (STT) effect. In one aspect, a device is provided to include a magnetic structure including a ferromagnetic layer having a magnetization direction that can be changed by spin transfer torque; a SHE layer that is electrically conducting and exhibits a spin Hall effect to, in response to an applied charge current, generate a spin-polarized current that is perpendicular to the applied charge current, the SHE layer located adjacent to the ferromagnetic layer to inject the spin-polarized current into the ferromagnetic layer; a first electrical contact in contact with the magnetic structure; a second electrical contact in contact with a first location of the SHE layer; a third electrical contact in contact with a second location of the SHE layer so that the first and second locations are on two opposite sides of the magnetic structure; a magnetic structure circuit coupled between the first electrical contact and one of the second and third electrical contacts to supply a current or a voltage to the magnetic structure; and a charge current circuit coupled between the second and third electrical contacts to supply the charge current into the SHE layer, wherein the device is operable at a low write error rate with pulses of a pulse duration of around 2 ns or shorter to switch a direction of the magnetization direction of the ferromagnetic layer in the magnetic structure.