Techniques and apparatus for reducing low frequency power supply spurs in clock signals in a clock distribution network. One example circuit for clock distribution generally includes a plurality of logic inverters coupled in series and configured to drive a clock signal and a current-starved inverter coupled in parallel (or in series) with a logic inverter in the plurality of logic inverters.

A semiconductor device includes a first area including a logic circuit, a second area including a functional circuit, a first power line, a second power line that supplies a power to the logic circuit and the functional circuit, and a first power switch circuit connected to the first power line and the second power line, wherein the first power switch circuit includes a first transistor larger than a transistor provided in the logic circuit and being connected to the first power line and the second power line, an end cap provided in an area next to the functional circuit, and a second transistor provided between the end cap and an area including the first transistor, the second transistor being of a same size as the transistor provided in the logic circuit and being connected to the first power line and the second power line.

A true complement dynamic circuit for combining, in particular comparing, binary data on dynamic first and second input signals to third and fourth input signals, comprising at least a 1-bit compare circuit, wherein the dynamic first and second input signals are complementary signals during an evaluation phase, wherein a logical behavior is determined by the third and fourth input signals. A method for operating a true complement dynamic circuit for combining, in particular comparing, binary data on dynamic first and second input signals to third and fourth input signals, comprising operating at least a 1-bit compare circuit, wherein the dynamic first and second input signals are complementary signals during an evaluation phase, determining a logical behavior by the third and fourth input signals.

A memory system in an embodiment includes: a nonvolatile memory; a memory controller configured to control the memory; and a power supply circuit configured to supply a voltage of power of at least one of the memory and the memory controller, wherein the power supply circuit is configured to: store first information having a value of the voltage to be supplied; output an output voltage based on the value of the voltage specified by the stored first information; detect an output current at an output end of the output voltage; compare a value of the detected output current with a threshold value; and update the stored first information to second information based on a result of the comparison, the second information having an updated value of the voltage to be supplied.

A power gating circuit includes inverters and a voltage divider sub-circuit, a latch comparator, and a gated switch sub-circuit connected to an external power supply circuit of 5V, respectively. The voltage divider sub-circuit is configured to divide a voltage of 5V and output a first voltage and a second voltage to the latch comparator and the gated switch sub-circuit, both voltage values of the first voltage and the second voltage are smaller than a withstand voltage value of a field effect transistor, and the voltage value of the first voltage is greater than that of the second voltage; the latch comparator is configured to compare two signals output by the inverters and latch a comparison result; and the gated switch sub-circuit is further connected with the latch comparator to control an output voltage, thereby improving the stability of the circuit, and extending the using life of the entire circuit.

A circuit includes a power management circuit configured to receive at least a first or a second control signal, and to supply at least a first, second or a third supply voltage. The first control signal has a first voltage swing. The second control signal has a second voltage swing. The power management circuit includes a first level shifter circuit configured to generate a first level shifted signal in response to the first control signal, and a first header circuit coupled to at least the first level shifter circuit, a first voltage supply and a second voltage supply. The first header circuit is configured to supply the first supply voltage of the first voltage supply to the first node in response to the first control signal, and to supply the second supply voltage of the second voltage supply to the second node in response to the first level shifted signal.

Disclosed is a semiconductor integrated circuit comprising a master chip including a first buffer circuit coupled to a first power line that is supplied with a first voltage and a first supply circuit that supplies a second voltage, having a lower voltage level than the first voltage, to a first through line in response to a control signal, and a slave chip, coupled to the first through line, including a second buffer circuit coupled to a second power line supplied with the second voltage and a second supply circuit that supplies the second voltage to a second through line in response to the control signal, which indicates whether the master chip and the slave chip are stacked.

Disclosed is a reference clock gating circuit for outputting a reliable reference clock according to an external clock. The circuit includes a detection circuit and a gating component. The detection circuit includes: a first counter counting according to triggers of the external clock and thereby generating a first clock number; a second counter counting according to triggers of an accurate slow clock and thereby generating a second clock number; and a decision circuit determining whether a ratio of the first clock number to the second clock number satisfies a predetermined condition after the second clock number reaches a predetermined number, and thereby generating a gating signal to control the gating component. If the ratio satisfies the predetermined condition, the gating component receives the external clock and outputs it as the reference clock; and if the ratio doesn't satisfy the predetermined condition, the gating component doesn't output the external clock.

A chip package used as a logic drive, includes: multiple semiconductor chips, a polymer layer horizontally between the semiconductor chips; multiple metal layers over the semiconductor chips and polymer layer, wherein the metal layers are connected to the semiconductor chips and extend across edges of the semiconductor chips, wherein one of the metal layers has a thickness between 0.5 and 5 micrometers and a trace width between 0.5 and 5 micrometers; multiple dielectric layers each between neighboring two of the metal layers and over the semiconductor chips and polymer layer, wherein the dielectric layers extend across the edges of the semiconductor chips, wherein one of the dielectric layers has a thickness between 0.5 and 5 micrometers; and multiple metal bumps on a top one of the metal layers, wherein one of the semiconductor chips is a FPGA IC chip, and another one of the semiconductor chips is a NVMIC chip.

A comparator circuit with dynamic biasing comprises a comparator, first dynamic biasing generator, first extra biasing device, second dynamic biasing generator, and second extra biasing device. The comparator includes a biasing circuit, input stage, active loads, and output terminal. The input stage has a first input terminal, second input terminal, first current path, and second current path. The comparator is configured to output an output signal at the output terminal according to the first input signal and second input signal. The first dynamic biasing generator is coupled between a first detection node and the first extra biasing device coupled to the biasing circuit. The second dynamic biasing generator is coupled between a second detection node and the second extra biasing device coupled to the biasing circuit. The first and second detection nodes are between the input stage and the active loads.