H03K19/0033

RADIATION-HARD PRECISION VOLTAGE REFERENCE

Provided is a Precision Voltage Reference (PVR). In one example, the PVR includes a resonator having an oscillation frequency, the resonator including a first proof-mass, a first forcer located adjacent a first side of the first proof-mass, and a second forcer located adjacent a second side of the first proof-mass. The PVR may include control circuitry configured to generate a reference voltage based on the oscillation frequency of the resonator, at least one converter configured to receive the reference voltage from the control circuitry, provide a first bias voltage to the first forcer based on the reference voltage, provide a second bias voltage to the second forcer based on the reference voltage, and periodically alter a polarity of the first and second bias voltages to drive the oscillation frequency to match a reference frequency, and an output configured to provide the reference voltage as a voltage reference signal.

ERROR CHECKING FOR PRIMARY SIGNAL TRANSMITTED BETWEEN FIRST AND SECOND CLOCK DOMAINS

An apparatus and method for transmitting signals between two clock domains in which at least one of a phase and a frequency of clock signals in the two clock domains is misaligned. The apparatus includes a first primary interface and a first redundant interface in the first clock domain for receiving a primary signal and a first checking signal respectively, and a second primary interface and second redundant interface in the second clock domain for outputting the primary signal and a second redundant signal respectively. The primary signal and the checking signals are separated by a predetermined time delay and the second checking signal is generated in the second clock domain based on the primary signal. Checking circuitry is provided in the second clock domain to perform an error checking procedure based on the two checking signals and to provide the second checking signal to the second redundant interface.

RADIATION-HARDENED D FLIP-FLOP CIRCUIT

A flip-flop circuit is disclosed. The flip-flop circuit includes a single-input inverter, a dual-input inverter, a single-input tri-state inverter, a dual-input tri-state inverter, and two single-event transient (SET) filters. The single-input tri-state inverter receives an input signal D. The dual-input tri-state inverter includes a first input, a second input and an output, wherein the first input receives output signals from the dual-input inverter and the second input receives output signals from the dual-input inverter via the first SET filter. The output of the dual-input tri-state inverter sends output signals to a first input of the dual-input inverter and a second input of the dual-input inverter via the second SET filter. The single-input inverter receives inputs from the dual-input inverter to provide an output signal Q for the flip-flop circuit.

INTERCONNECTION NETWORK FOR INTEGRATED CIRCUIT
20190363829 · 2019-11-28 ·

An interconnection network for providing data transfer between a plurality of nodes of an integrated circuit comprises a number of endpoints for exchanging data with respective nodes of the integrated circuit, a primary network to route a primary payload from a source endpoint to a destination endpoint; and a redundant network to route, to the destination endpoint, a redundant payload comprising a first check code calculated based on at least a portion of the primary payload, the first check code having fewer bits than said at least a portion of the primary payload. The destination endpoint comprises error checking circuitry to perform an error checking operation to calculate a second check code based on the primary payload received via the primary network, and verify integrity of the primary payload based on a comparison of the second check code with the first check code received via the redundant network.

Clocked miller latch design for improved soft error rate

Systems, circuits, and chips for hardening a latch/flip-flop circuit against soft errors caused by alpha and neutron radiation are provided. As an example, a latch/flip-flop circuit including a switch to selectively couple a capacitor to first and second storage nodes during a hold phase is disclosed.

CLOCKED MILLER LATCH DESIGN FOR IMPROVED SOFT ERROR RATE
20190319622 · 2019-10-17 ·

Systems, circuits, and chips for hardening a latch/flip-flop circuit against soft errors caused by alpha and neutron radiation are provided. As an example, a latch/flip-flop circuit including a switch to selectively couple a capacitor to first and second storage nodes during a hold phase is disclosed.

Complementary 2(N)-Bit Redundancy for Single Event Upset Prevention
20240171179 · 2024-05-23 · ·

The present disclosure describes various aspects of complementary 2(N)-bit redundancy for single event upset (SEU) prevention. In some aspects, an integrated circuit includes a data storage element to store a data value, another data storage element to store a complementary data value, a multi-bit data storage element (e.g., a 2-bit storage element to store both the data value and the complementary data value, and voting logic that may enable a complementary data storage scheme with inter-circuit redundancy to prevent SEU. Additionally, the voting logic of the integrated circuit may enable detection and correction of data value errors and/or enable programming of voting logic criteria, which may be implemented dynamically based on a type of SEU failures that are detected or corrected.

Radiation-hardened latch circuit

A radiation-hardened electronic system is disclosed. The radiation-hardened electronic system includes a reconfigurable analog circuit block, a digital configuration logic circuit block, and a radiation-hardened isolation latch circuit connecting between the reconfigurable analog circuit block and the digital configuration logic circuit block. The reconfigurable analog circuit block includes multiple analog inputs and outputs. The digital configuration logic circuit block includes multiple digital inputs and outputs for controlling various functionalities of the reconfigurable analog circuit block via a set of configuration data. The radiation-hardened isolation latch circuit prevents the configuration data from entering the reconfigurable analog circuit block when the configuration data has been corrupted by a SEU.

COMPENSATING FOR DEGRADATION OF ELECTRONICS DUE TO RADIATION VULNERABLE COMPONENTS
20190207606 · 2019-07-04 ·

Techniques to compensate non-radiation hardened components for changes or degradation in performance that result from exposure to radiation. During testing and modeling phase, a component's performance may be characterized as a result of the exposure to radiation. In some examples, some performance characteristics, such as voltage response, frequency response, gain, leakage or other characteristics, may change as the component's exposure to an amount of radiation increases. During normal operation, a system may include one or more devices that measure the amount of radiation to which the system may be subjected, such as a radiation dosimeter. The system may compensate the non-radiation hardened component based on the amount of radiation received the known component performance change caused by radiation as determined during the modeling phase.

LOW-VOLTAGE DIFFERENTIAL SIGNAL DRIVER AND RECEIVER MODULE WITH RADIATION HARDNESS TO 300 KILORAD

An LVDS device wherein driver and receiver functionalities are integrated in the same package, signals are routed from the individual driver and receiver elements inside the package such that all inputs are one side of the package, and all outputs are on the opposite side of the package, allowing for an optimized signal flow through the package. All required capacitors and resistors are integrated inside the package; no external electronic components are required. All of the above novelties also contribute to a 6:1 reduction in size compared to current state-of-the-art, for the same number of communication channels. Embodiments include a packaging topology adaptable to extreme environments, including radiation tolerant to 300 kRad (based on the die technology), so that module operational temperature is in a range of 55 C. to +100 C. and storage temperature can be as low as 184 C.