An electronic device including a digital circuit to be compensated and a compensation device for compensating PVT variations of this digital circuit. This compensation device is arranged also for controlling the operating speed of the digital circuit and can also be arranged for equalising a rise time and a fall time of a logic gate including the transistors of the digital circuit. The electronic device implements a first loop, allowing to control the operating speed of the digital circuit by exploiting the same voltage at the compensation terminals of the compensation device and at the terminals at the digital circuit and at a critical path replica module allowing to control the threshold voltages of the respective transistors. The electronic device can implement also a second loop allowing to equalise the rise and fall times of a logic gate including the transistors of the digital circuit.

A semiconductor apparatus may include logic circuits and a control logic. The control logic may be configured to monitor characteristics of the logic circuits to allow the semiconductor apparatus to perform at different operating speeds.

A semiconductor integrated circuit device includes: first and second transistors provided between a first power source and an output terminal; a step-down circuit that generates a second power source from the first power source; a power source switch circuit that outputs, as a fourth power source, a higher one of potentials of the second power source and a third power source; and a level shifter circuit that transits between the first power source and a fourth power source. The first transistor has a gate connected to an output of the level shifter circuit; the second transistor has a gate connected to the fourth power source.

Clock generation and control in a semiconductor system having process, voltage and temperature (PVT) variation. A semiconductor device may include at least first and second ring oscillators, each disposed at locations respectively closest to first and second logic circuits of an operation circuit, and generating first and second oscillating signals. A detecting circuit is configured to perform a predetermined logic operation on the first oscillating signal and the second oscillating signal to generate a first clock signal. A calibration circuit is configured to receive the first clock signal from the detecting circuit and perform a delay control on each of the first ring oscillator and the second ring oscillator to generate a second clock signal for operating the operation circuit.

Method and apparatus for monitoring and reconfiguring a programmable device are disclosed. In some implementations, the programmable device may include a processor and a plurality of satellite monitors to determine operating temperatures at various locations throughout the programmable device. When temperatures of at least some of the satellite monitors exceed a threshold, the processor may reconfigure the programmable device using an alternative configuration. The alternative configuration may provide equivalent functionality with respect to an initial configuration through a different arrangement of functional blocks within the programmable device. The new arrangement of functional blocks may reduce operating temperatures by relocating blocks to different regions of the programmable device.

An integrated circuit includes a digital circuit and an energy management circuit. The digital circuit operates with an internal power supply voltage in synchronism with a clock signal and comprises complementary metal-oxide-semiconductor (CMOS) transistors. The energy management circuit has an input for receiving an external power supply voltage and an output for providing the internal power supply voltage. The energy management circuit is thermally coupled to the digital circuit and sets the internal power supply voltage to a nominal voltage when a temperature of the digital circuit is greater than a boost temperature. The energy management circuit boosts the internal power supply voltage to a boosted voltage greater than the nominal voltage when the temperature of the digital circuit is less than the boost temperature.

A fixed-width pulse generator includes a metastability detector circuit, a delay signal generator, and a combinational logic circuit. The metastability detector circuit is configured to receive a trigger signal and generate state detection signals. The delay signal generator is configured to receive the state detection signals and the trigger signal, and delay the trigger signal by two different delay values to generate two different delayed signals. One of the delay values is based on the state detection signals. The combinational logic circuit is configured to receive the two delayed signals and an error signal, and generate a fixed-width pulse that remains constant over process, voltage, and temperature variations.

An integrated circuit includes a digital circuit and an energy management circuit. The digital circuit operates with an internal power supply voltage in synchronism with a clock signal and comprises complementary metal-oxide-semiconductor (CMOS) transistors. The energy management circuit has an input for receiving an external power supply voltage and an output for providing the internal power supply voltage. The energy management circuit is thermally coupled to the digital circuit and sets the internal power supply voltage to a nominal voltage when a temperature of the digital circuit is greater than a boost temperature. The energy management circuit boosts the internal power supply voltage to a boosted voltage greater than the nominal voltage when the temperature of the digital circuit is less than the boost temperature.

This application relates to control of semiconductor devices, in particular MOS devices, so as to reduce RTS/flicker noise. A circuit (100) includes a first MOS device (103, 104) and a bias controller (107). The circuit is operable in at least a first circuit state (P.sub.RO) in which the first MOS device is active to contribute to a first signal (Sout) and a second circuit state (P.sub.RST) in which the first MOS device does not contribute to the first signal. The bias controller is operable to control voltages at one or more terminals of the first MOS device to apply a pre-bias (V.sub.RB1, V.sub.PB2) during an instance of the second circuit state. The pre-bias is applied to set an occupancy state of charge carriers traps within the first MOS device, to limit noise during subsequent operation in the first circuit state. In embodiments, the bias controller is configured so that at least one parameter of the pre-bias is selectively variable in use based on one or more operating conditions.

A glitch removal circuit removes glitch noise contained in a Power-good signal and a Power-on Reset signal, and includes: a first glitch removal unit that operates according to a first clock signal, and removes glitch noise from a Power-good signal; and a second glitch removal unit that operates according to a second clock signal, and removes glitch noise from a Power-on Reset signal, in which the first glitch removal unit is configured so as to be initialized according to an output signal of the second glitch removal unit, and the second glitch removal unit is configured so as to be initialized according to an output signal of the first glitch removal unit.