In one embodiment, a circuit includes a resistance including first and second terminals. The first terminal of the resistance is coupled to ground. The circuit also includes a first switching element including first, second, and third terminals. The first terminal of the first switching element is coupled to an output of an integrated circuit and the second terminal of the first switching element is coupled to a voltage supply of the integrated circuit. Additionally, the circuit includes a second switching element including first, second, and third terminals. The first terminal of the second switching element is coupled to an enable input of the integrated circuit. Furthermore, the second terminal of the second switching element is coupled to the third terminal of the first switching element and to the second terminal of the resistance. Moreover, the third terminal of the second switching element is coupled to the ground.

A communication device is disclosed. The disclosed communication device comprises: a transmission circuit for generating a transmission signal by using a first field effect transistor (FET) and a signal inputted from a first control circuit, and transmitting the transmission signal to a second control circuit; and a reception circuit for generating a reception signal by using a second field effect transistor (FET) and a signal received from the second control circuit, and outputting the reception signal to the first control circuit.

A transmitter according to the disclosure includes: three first driver sections; three first pre-driver sections that are provided corresponding to the respective three first driver sections, and each drive corresponding one of the first driver sections on a basis of corresponding one of three first control signals that are different from one another and each including predetermined number of signals; a second pre-driver section that operates on a basis of a second control signal that includes predetermined number of signals; and a controller that controls transition of the predetermined number of signals included in the second control signal to allow number of signals to be subjected to the transition out of the plurality of signals included in the three first control signals and the plurality of signals included in the second control signal to be same between timings of the transition.

In a semiconductor device of related art, the degree of freedom when using one pad with plural functions has been disadvantageously low.

A semiconductor device has an internal logic circuit, a regulator circuit, and an interface circuit, and the regulator circuit and the interface circuit are coupled to one shared pad. In the case where a driving transistor of the regulator circuit is controlled to be in a conductive state, the shared pad is used as a terminal to which an input voltage of the regulator circuit is input. In the case where the driving transistor of the regulator circuit is controlled to be in a disconnected state, the shared pad is used as an input/output terminal of the interface circuit.

A communication device is disclosed. The disclosed communication device comprises: a transmission circuit for generating a transmission signal by using a first field effect transistor (FET) and a signal inputted from a first control circuit, and transmitting the transmission signal to a second control circuit; and a reception circuit for generating a reception signal by using a second field effect transistor (FET) and a signal received from the second control circuit, and outputting the reception signal to the first control circuit.

The techniques of this disclosure may digitally generate a driver signal with a period (or frequency) at a finer resolution than can be achieved by simply counting clock cycles of a system clock. The driver signal may be configured to trigger based on single output clock signal that may be phase-shifted relative to the master system clock. A clock phase shift circuit may increment the phase shift of the output clock signal to any fraction relative to the master system clock. A driver signal generated based on the phase-shifted output clock may achieve the high resolution in frequency desirable when controlling some pulse-width modulated circuits, such as an LLC converter.

Apparatuses and methods associated with voltage tolerant termination presence detection for universal serial bus type-C connectors are disclosed herein. In embodiments, an apparatus to enable voltage tolerant termination presence detection may include sensor circuitry to determine whether a device coupled to the sensor circuitry is to operate in host mode or device mode based on a signal on a configuration channel between the device and the sensor circuitry. In embodiments, the apparatus may further include termination circuitry to bias the configuration channel in accordance with the host mode or the device mode based on the determination of whether the device is to operate in the host mode or the device mode. Other embodiments may be described and/or claimed.

Disclosed is a high speed level shifter which converts a low voltage into a high voltage. The high speed level shifter includes an output circuit configured to output an output signal of a high voltage range in response to an input signal of a low voltage range; an input circuit operated in the low voltage range, and configured to control output of the output signal through an output terminal in response to the input signal; and a connection circuit configured to drop a voltage applied to the input circuit from the output circuit.

A semiconductor device includes a low voltage region, a high voltage region monolithically integrated with the low voltage region in a semiconductor substrate, where the low voltage region is electrically coupled to the high voltage region through a capacitive isolation barrier, where the high voltage region is structurally isolated from the low voltage region by an isolation structure. The isolation structure includes a junction termination structure, a deep trench structure, or a reduced surface field (RESURF) structure. The isolation structure forms an isolation ring substantially enclosing the high voltage region in the semiconductor substrate. The low voltage region is configured to provide a differential signal to the high voltage region through the capacitive isolation barrier. The high voltage region is configured to receive a differential signal from the low voltage region through the capacitive isolation barrier so as to level shift the differential signal.

A current corresponding to the difference between an input signal voltage and an output signal voltage is generated as an amplification acceleration current. The amplification acceleration current is sent to an output node of a current mirror, which drives a transistor in an output amplifier stage, and therefore added to a current to drive the transistor in the output amplifier stage.