This patent document provides implementations and examples of circuits and devices based on low-energy consumption semiconductor structures exhibiting multi-valued states. In one aspect, a semiconductor device is configured to comprise: a multi-layer structure forming a magnetoelectric or multiferroic system to include a ferromagnetic, magnetostrictive layer that exhibits a biaxial magnetic anisotropy and an underlying metal structure exhibits a spin Hall effect to provide a conversion between electrical energy and magnetic energy with more than two distinctive magnetic states.

An in-memory computing circuit having reconfigurable logic, including: an input stage and N output stages which are cascaded. The input stage includes 2.sup.N STT-MTJs. Each output stage includes STT-MTJs, of which a quantity is equal to a half of a quantity of STT-MTJs in a just previous stage. Two STT-MTJs in the previous stage and one STT-MTJ in the subsequent stage form a double-input single-output in-memory computing unit. Each double-input single-output in-memory computing unit can implement the four logical operations, i.e., NAND, NOR, AND, and OR, under different configurations. Data storage and logical operations can be realized under the same circuit architecture, and reconfigurations among different logic can be achieved.

Methods, devices, and compositions for use with spintronic devices such as magnetic random access memory (MRAM) and spin-logic devices are provided. Methods include manipulating magnetization states in spintronic devices and making a structure using spin transfer torque to induce magnetization reversal. A device described herein manipulates magnetization states in spintronic devices and includes a non-magnetic metal to generate spin current based on the giant spin Hall effect, a ferromagnetic thin film with perpendicular magnetic anisotropy, an oxide thin film, and an integrated magnetic sensor. The device does not require an insertion layer between a non-magnetic metal with giant spin Hall effect and a ferromagnetic thin film to achieve perpendicular magnetic anisotropy.

Methods, devices, and compositions for use with spintronic devices such as magnetic random access memory (MRAM) and spin-logic devices are provided. Methods include manipulating magnetization states in spintronic devices and making a structure using spin transfer torque to induce magnetization reversal. A device described herein manipulates magnetization states in spintronic devices and includes a non-magnetic metal to generate spin current based on the giant spin Hall effect, a ferromagnetic thin film with perpendicular magnetic anisotropy, an oxide thin film, and an integrated magnetic sensor. The device does not require an insertion layer between a non-magnetic metal with giant spin Hall effect and a ferromagnetic thin film to achieve perpendicular magnetic anisotropy.

A device having ratioed logic with a high impedance load is described. The device includes a pull-down network coupled between a first voltage and an output. The device also includes a high impedance load coupled between a second voltage and the output. The high impedance load being smaller than a transistor of the pull-down network.

A device having ratioed logic with a high impedance load is described. The device includes a pull-down network coupled between a first voltage and an output. The device also includes a high impedance load coupled between a second voltage and the output. The high impedance load being smaller than a transistor of the pull-down network.

The disclosed technology generally relates to magnetic devices and more particularly to spin torque majority gate devices, and to methods of operating such devices. In one aspect, a majority gate device comprises a free ferromagnetic layer comprising 3N input zones and an output zone. The output zone has a polygon shape having 3N sides, where each input zone adjoins the output zone. The input zones are arranged around the output zone according to a 3N-fold rotational symmetry, where N is a positive integer greater than 0. The input zones are spaced apart from one another by the output zone. The majority gate device additionally comprises a plurality of input controls, where each of the input zones is magnetically coupled to a corresponding one of the plurality of input controls, where each of the input controls is configured to control the magnetization state of the corresponding input zone. The majority gate device further comprises an output sensor magnetically coupled to the output zone, where the output sensor is adapted for sensing the magnetization state of the output zone. Each input zones adjoins the output zone at one of the 3N sides.

The disclosed technology generally relates to magnetic devices and more particularly to spin torque majority gate devices, and to methods of operating such devices. In one aspect, a majority gate device comprises a free ferromagnetic layer comprising 3N input zones and an output zone. The output zone has a polygon shape having 3N sides, where each input zone adjoins the output zone. The input zones are arranged around the output zone according to a 3N-fold rotational symmetry, where N is a positive integer greater than 0. The input zones are spaced apart from one another by the output zone. The majority gate device additionally comprises a plurality of input controls, where each of the input zones is magnetically coupled to a corresponding one of the plurality of input controls, where each of the input controls is configured to control the magnetization state of the corresponding input zone. The majority gate device further comprises an output sensor magnetically coupled to the output zone, where the output sensor is adapted for sensing the magnetization state of the output zone. Each input zones adjoins the output zone at one of the 3N sides.

An electronic device is presented, the device comprises: a spin accumulating structure; a spin selective filter electrically connected at a first end thereof to a first surface of said spin accumulating layer structure; a charge carrier source attached to said spin selective filter at a second end of the spin selective filter; wherein the spin selective filter is configured to allow passage of the charge carriers having a predetermined spin orientation from the charge carrier source to the spin accumulating structure, thereby causing a variation of spin distribution of the charge carriers within the spin accumulating structure. The device comprises further at least first and second pairs of electrical contacts which are connected to the spin accumulating structure and define first and second electrical paths through said spin accumulating structure, said first and second electrical paths intersecting within said spin accumulating structure. The device including a circuit configured to apply an electrical current between the first pair of electrical contacts and to detect the variation of spin-distribution of charge carriers within the spin accumulating structure by determining electrical voltage between the second pair of electrical contacts in response to the applied electrical current.

A voltage-controlled magnetic based device is described that includes a magnetic insulator; a topological insulator adjacent the magnetic insulator; and magnetic dopants within the topological insulator. The magnetic dopants are located within an edge region of the topological insulator to inhibit charge current flow in the topological insulator during a switching operation using an applied electric field generating by applying a switching voltage across two electrodes at opposite sides of the topological insulator. Power dissipation due to carrier-based currents can be avoided or at least minimized by the magnetic dopants at the edges of the topological insulator.