A molecular data storage system is presented for encoding data-block(s). The system includes one or more populations of molecular sequences, each population encoding a respective one of the data-blocks. Each molecular sequence comprises a data encoding section comprising a sequence of similar predetermined length N of short k-mers, whereby in each population the data encoding sections of all molecular sequences have the similar predetermined length N. The short k-mers serve as data encoding building blocks of the data encoding sections, whereby valid short k-mers serving as data encoding building blocks form a subset of a building-block-set consisting of a number Z of different preselected short k-mers each presenting a unique combination of a number k of bases of a preselected set of bases, characterized in that all the Z types of short k-mers in said building-block-set have a similar predetermined size k≥2 (plurality) of bases. The data encoding sections collectively encode a sequence of encoded alphabet letters S=(π.sup.1, π.sup.2, . . . , π.sup.n . . . , π.sup.N−1, π.sup.N). Each valid encoded alphabet letter π.sup.n at location n of the sequence S of alphabet letters is characterized by occurrence of a predetermined plurality of different types of short k-mers of the building-block-set in a corresponding location n along the data encoding sections of the plurality of molecular sequences of said population.

A method of failure mapping is provided. The method includes determining that a non-volatile memory block in the memory has a defect and generating a mask that indicates the non-volatile memory block and the defect. The method includes reading from the non-volatile memory block with application of the mask, wherein the reading and the application of the mask are performed by the non-volatile solid-state storage.

According to one embodiment, a memory system includes a nonvolatile memory and a controller. The controller manages a plurality of namespaces for storing a plurality of kinds of data having different update frequencies. The controller encodes write data by using first coding for reducing wear of a memory cell to generate first encoded data, and generates second encoded data to be written to the nonvolatile memory by adding an error correction code to the first encoded data. The controller changes the ratio between the first encoded data and the error correction code based on the namespace to which the write data is to be written.

According to one embodiment, a memory system includes a nonvolatile memory and a controller. The controller manages a plurality of namespaces for storing a plurality of kinds of data having different update frequencies. The controller encodes write data by using first coding for reducing wear of a memory cell to generate first encoded data, and generates second encoded data to be written to the nonvolatile memory by adding an error correction code to the first encoded data. The controller changes the ratio between the first encoded data and the error correction code based on the namespace to which the write data is to be written.

Methods, systems, and devices for programmable metadata and related operations are described. A method may include receiving signaling that indicates a set of rules for transitions of states of metadata at a memory device storing the metadata. The memory device may receive a command from a host device associated with a set of data after receiving the set of rules. The memory device may transition metadata associated with the set of data stored at the memory device from a first state to a second state based in part on the set of rules and the command. The memory device may execute the command received from the host device.

A semiconductor system includes a controller configured to, in a write operation, output write data and a write error code through at least any one of input/output lines, and in a read operation, receive read data and a read error code through at least any one of the input/output lines and detect a failure of the input/output lines depending on whether the read data is error-corrected; and a semiconductor device configured to, in the write operation, correct an error of the write data based on the write error code, store the error-corrected write data and store the write error code, and in the read operation, correct an error of the write data based on the write error code stored in the write operation, output the error-corrected write data as the read data, and output the write error code stored in the write operation, as the read error code.

A method for channel-coding information bits using a code generation matrix including 32 rows and A columns corresponding to length of the information bits includes, channel-coding the information bits having “A” length using basis sequences having 32-bit length corresponding to columns of the code generation matrix, and outputting the channel-coded result as an output sequence. If “A” is higher than 10, the code generation matrix is generated when (A−10) additional basis sequences were added as column-directional sequences to a first or second matrix. The first matrix is a TFCI code generation matrix composed of 32 rows and 10 columns used for TFCI coding. The second matrix is made when at least one of an inter-row location or an inter-column location of the first matrix was changed. The additional basis sequences satisfy a value 10 of a minimum Hamming distance.

A method for channel-coding information bits using a code generation matrix including 32 rows and A columns corresponding to length of the information bits includes, channel-coding the information bits having “A” length using basis sequences having 32-bit length corresponding to columns of the code generation matrix, and outputting the channel-coded result as an output sequence. If “A” is higher than 10, the code generation matrix is generated when (A−10) additional basis sequences were added as column-directional sequences to a first or second matrix. The first matrix is a TFCI code generation matrix composed of 32 rows and 10 columns used for TFCI coding. The second matrix is made when at least one of an inter-row location or an inter-column location of the first matrix was changed. The additional basis sequences satisfy a value 10 of a minimum Hamming distance.

An interconnect including an input couplable to a source, and an encoder coupled to the input. The encoder is configured to: group information that is received from the source via a same channel; size the grouped information to a common width; and apply protection to the sized grouped information.

Systems, methods, and instrumentalities are disclosed for interleaving coded bits. A wireless transmit/receive unit (WTRU) may generate a plurality of polar encoded bits using polar encoding. The WTRU may divide the plurality of polar encoded bits into sub-blocks of equal size in a sequential manner. The WTRU may apply sub-block wise interleaving to the sub-blocks using an interleaver pattern. The sub-blocks associated with a subset of the sub-blocks may be interleaved, and sub-blocks associated with another subset of the sub-blocks may not be interleaved. The sub-block wise interleaving may include applying interleaving across the sub-blocks without interleaving bits associated with each of the sub-blocks. The WTRU may concatenate bits from each of the interleaved sub-blocks to generate interleaved bits, and store the interleaved bits associated with the interleaved sub-blocks in a circular buffer. The WTRU may select a plurality of bits for transmission from the interleaved bits.