An example imaging sensor comprises a bulk silicon substrate and a pixel array. The pixel array comprises an active pixel region including an active pixel subarray, an optical black pixel region including an optical black pixel subarray, and an optical black dummy pixel region including an optical black dummy pixel subarray, the optical black dummy pixel region positioned between the active pixel region and the optical black pixel region. A near-infrared absorber is positioned between the active pixel region and the optical black pixel region, the near-infrared absorber comprising a material having a higher near-infrared absorption coefficient than that of silicon.

A pixel portion includes photodiodes formed on a semiconductor substrate as photoelectric conversion portions, and includes: a high absorption layer (HA layer) for controlling a reflection component of incident light on one surface side of the photodiodes (photoelectric conversion portions), and re-diffusing the incident light in the photoelectric conversion portions, on one surface side of the photodiodes upon which light is incident; and a diffused light suppression structure for suppressing diffused light (caused by light scattering) in a light incident path toward one surface side of the photoelectric conversion portions including the high absorption layer. Due to this, a solid-state imaging apparatus capable of reducing crosstalk between pixels, achieving miniaturization of pixel size, reducing color mixing, and achieving high sensitivity and high performance can be realized.

Multi-cameras in which two sub-cameras share a camera aperture. In some embodiments, a multi-camera comprises a first sub-camera including a first lens and a first image sensor, the first lens having a first optical axis, a second sub-camera including a second lens and a second image sensor, the second lens having a second optical axis, and an optical element that receives light arriving along a third optical axis into the single camera aperture and splits the light for transmission along the first and second optical axes.

A gain modification device (20) includes a plurality of gain modification units (31) whose number of units corresponds to a number of kinds of a plurality of signals input to the plurality of gain modification units, each one of the plurality of gain modification units (31) being configured to modify a gain value used to amplify the plurality of signals, and a plurality of gain reflection control units (44) configured to change a timing at which the gain value is to be switched by the plurality of gain modification units (31) such that the gain value of one of the plurality of signals affecting a signal level of another one of the plurality of signals is switched at a timing different from a timing at which the gain value of the another one of the plurality of signals is switched.

An infrared processing system includes a first thermal image generating unit, an object extracting unit, a second thermal image generating unit, and an object temperature calculating unit. The first thermal image generating unit generates, using a first temperature correction value, a first thermal image based on the output signal of the image sensor. The object extracting unit extracts the object from the first thermal image. The second thermal image generating unit generates, using a second temperature correction value corresponding to the object that has been extracted by the object extracting unit, a second thermal image based on the output signal of the image sensor. The object temperature calculating unit calculates, based on the second thermal image that has been generated by the second thermal image generating unit, a temperature of the object that has been extracted by the object extracting unit.

An imaging apparatus includes a first optical system, a first separation optical system that separates the light transmitted through the first optical system into the first wavelength range light and the second wavelength range light, a second optical system that transmits the first wavelength range light obtained by the first separation optical system, a third optical system that transmits the second wavelength range light obtained by the first separation optical system, a first image sensor that receives the first wavelength range light, a second image sensor that receives the second wavelength range light, and a first light source that emits the first wavelength range light, in which the first optical system emits the first wavelength range light emitted from the first light source to a subject, and transmits subject light including first wavelength range reflected light obtained by reflecting the first wavelength range light by the subject.

A hyperspectral infrared imaging system includes optical components, multi-color focal plane array or arrays, readout electronics, control electronics, and a computing system. The system measures a limited number of spatial and spectral points during image capture and the full dataset is computationally generated.

A system simulates hyperspectral imaging data or multispectral imaging data for a simulated sensor. Blackbody radiance of real-world thermal imagery data is computed using a Planck function, which generates a simulated spectral hypercube. Spectral emissivity data for background materials are multiplied by a per-pixel weighting function, which generates weighted spectral emissivity data. The simulated spectral hypercube is multiplied by the weighted spectral emissivity data, which generates background data in the simulated spectral hypercube. Simulated targets are inserted the background data using the Planck function. The simulated spectral hypercube is modified, and then it is used to estimate a mission measure of effectiveness of the simulated sensor.

An image processing device includes: a measuring unit that measures a light quantity; an identification unit that identifies a region within an image-capturing range using the measured light quantity, the region having a light quantity higher than or equal to a predetermined light quantity; a setting unit that sets an image-capturing angle so that the identified region is out of the image-capturing range; and an image-capturing unit that captures an image for authentication at the image-capturing angle set by the setting unit.

A pixel readout circuit and a technique for imaging are disclosed. The circuit includes: an array of pixel integration circuits, each adapted for receiving an electric signal indicative of photocurrent of light sensitive pixel of a pixel matrix, integrate the electric signal over a frame period, and output the integrated signal at an imaging frame rate being one over the period; and an array of pixel derivation circuits, each includes a signal preprocessing channel for receiving a total electric signal indicative of at least a component of the photocurrent(s) of a cluster of respective light sensitive pixel(s); and a comparison unit adapted to analyze the total electric signal to determine digital data indicative of a change in the total electric signal relative to one or more thresholds; and a digital output utility adapted to readout of the digital data at a second rate different than the frame rate.