This technology relates to a solid-state image sensor configured to make smaller the chip size of a CIS that uses an organic photoelectric conversion film, and to an electronic apparatus. A solid-state image sensor according to a first aspect of this technology is characterized in that it includes a first substrate and a second substrate stacked one on top of the other and a first organic photoelectric conversion film formed on the first substrate and that a latch circuit is formed on the second substrate. This technology may be applied to back-illuminated CISs, for example.

A signal processing device has tunable wavelength extraction and detection of a narrow band, while maintaining resolution. The signal processing device includes an acquisition unit that acquires a signal of a first wavelength band in which wavelength extraction is possible in a tunable manner by means of postprocessing and a signal of a second wavelength band to be used for a special purpose; and a signal processing unit that performs signal processing using the signal of the first wavelength band and the signal of the second wavelength band.

An imaging element according to an embodiment of the present disclosure includes a first photoelectric conversion section and a second photoelectric conversion section that are stacked in order from light incident side and that selectively detect and photoelectrically convert light beams of different wavelength bands, and the second photoelectric conversion section is disposed at an interval narrower than a pixel pitch of the first photoelectric conversion section.

An image processing apparatus including a processor is provided. The processor inputs, from an imaging element in which first imaging pixels having a lower SNR and second imaging pixels having a higher SNR are arranged on a same layer, a first captured image by the first imaging pixels and a second captured image by the second imaging pixels when the first imaging pixels and the second imaging pixels perform imaging simultaneously, selects a target pixel from the first captured image, extracts, from the second captured image or an interpolated image of the second captured image, pixels having luminance values close to a luminance value of a pixel corresponding to the target pixel in the second captured image or interpolated image, selects pixels corresponding to the extracted pixels from the first captured image, and corrects a luminance value of the target pixel based on luminance values of the selected pixels.

An image sensor includes a first sensor pixel and a second sensor pixel that vertically overlap each other. The first sensor pixel includes a first signal generation circuit, and a first photoelectric converter that is connected to the first signal generation circuit and configured to generate first information from light having a first wavelength. The second sensor pixel includes a second signal generation circuit, and a second photoelectric converter that is connected to the second signal generation circuit and configured to generate second information from light having a second wavelength. A first horizontal surface area of the first photoelectric converter is different from a second horizontal surface area of the second photoelectric converter. An image sensor module includes the image sensor, a light source configured to emit light to a target object, and a dual band pass filter configured to selectively pass light reflected from the target object.

The present technology relates to a solid-state imaging device, a driving method therefor, and an electronic apparatus capable of acquiring a signal to detect phase difference and a signal to generate a high dynamic range image at the same time. The solid-state imaging device includes a pixel array unit in which a plurality of pixels that receives light of a same color is arranged under one on-chip lens. The plurality of pixels uses at least one pixel transistor in a sharing manner, some pixels out of the plurality of pixels are set to have a first exposure time, and other pixels are set to have a second exposure time shorter than the first exposure time. The present technology can be applied to, for example, a solid-state imaging device or the like.

This technology relates to a solid-state image sensor configured to make smaller the chip size of a CIS that uses an organic photoelectric conversion film, and to an electronic apparatus. A solid-state image sensor according to a first aspect of this technology is characterized in that it includes a first substrate and a second substrate stacked one on top of the other and a first organic photoelectric conversion film formed on the first substrate and that a latch circuit is formed on the second substrate. This technology may be applied to back-illuminated CISs, for example.

An imaging element includes a photoelectric conversion unit including a first electrode 11, a photoelectric conversion layer 13, and a second electrode 12 that are stacked, in which the photoelectric conversion unit further includes a charge storage electrode 14 arranged apart from the first electrode 11 and arranged to face the photoelectric conversion layer 13 through an insulating layer 82, and when photoelectric conversion occurs in the photoelectric conversion layer 13 after light enters the photoelectric conversion layer 13, an absolute value of a potential applied to a part 13.sub.C of the photoelectric conversion layer 13 facing the charge storage electrode 14 is a value larger than an absolute value of a potential applied to a region 13.sub.B of the photoelectric conversion layer 13 positioned between the imaging element and an adjacent imaging element.

An image sensor may include a photoelectric device configured to selectively absorb light associated with a first color of three primary colors, a semiconductor substrate stacked with the photoelectric device and including first and second photo-sensing devices configured to sense light associated with second and third colors of the three primary colors, respectively, a first color filter corresponding to the first photo-sensing device and configured to selectively transmit light of the first wavelength spectrum, a second color filter corresponding to the second photo-sensing device and configured to selectively transmit light associated with a mixed color of the first color and the third color, and a first insulating layer between the photoelectric device and the semiconductor substrate and corresponding to the second photo-sensing device, and configured to selectively reflect light of a part of visible light.

In one example, a pixel cell comprises a first photodiode to generate a first charge and a second photodiode to generate a second charge. The pixel cell may include a charge sensing unit shared between the first photodiode and the second photodiode. The charge sensing unit may include a charge storage device to temporarily store a charge and convert the charge to a voltage. The pixel cell may include a quantizer to quantize the voltage output by the charge sensing unit, and a memory to store the quantization output. Depending on an operation mode, the first charge and the second charge can be controlled to flow simultaneously to the charge sensing unit for read out, or can be controlled to flow separately to the charge sensing unit for read out. The pixel cell further includes a memory to store a quantization result of the first charge and the second charge.