A stacked imaging device includes a polarizer and a plurality of photoelectric conversion units that is stacked, and the polarizer and the plurality of photoelectric conversion units are stacked, with the polarizer being disposed closer to the light incident side than the plurality of photoelectric conversion units.

Organic image sensors are provided. An organic image sensor includes a pixel electrode including a plurality of first electrodes spaced apart from each other. The organic image sensor includes an insulating region including a protruding portion that protrudes beyond surfaces of the plurality of first electrodes. The organic image sensor includes an organic photoelectric conversion layer on the pixel electrode and the protruding portion of the insulating region. Moreover, the organic image sensor includes a second electrode opposite the pixel electrode and on the organic photoelectric conversion layer.

An imaging element according to an embodiment of the present disclosure includes a first photoelectric conversion section and a second photoelectric conversion section that are stacked in order from light incident side and that selectively detect and photoelectrically convert light beams of different wavelength bands, and the second photoelectric conversion section is disposed at an interval narrower than a pixel pitch of the first photoelectric conversion section.

In an array of multi-color vertical detector color pixel sensors, a readout wiring architecture includes a transfer transistor for each individual color detector. In first and second rows in a first column, the first, second, and third color transfer transistor gates are coupled, respectively, to the first, second, and third row-select lines. In a first row in a second column, the first color transfer transistor gate is coupled to the second row-select line, the second color transfer transistor gate is coupled to the first row-select line, and the third color transfer transistor gate is coupled to the third row-select line. In a second row in the second column, the first color transfer transistor gate is coupled to the first row-select line, the second color transfer transistor gate is coupled to the third row-select line, and t the third color transfer transistor gate is coupled to the second row-select line.

A back side illuminated image sensor includes a pixel formed by three doped photosensitive regions that are superposed vertically in a semiconductor substrate. Each photosensitive region is laterally framed by a respective vertical annular gate. The vertical annular gates are biased by a control circuit during an integration phase so as to generate an electrostatic potential comprising potential wells in the central portion of the volume of each doped photosensitive region and a potential barrier at each interface between two neighboring doped photosensitive regions.

An image sensor comprises: a plurality of pixels each having an avalanche photodiode; and a control unit that controls, for each of a plurality of pixel groups which are obtained by dividing the plurality of pixels, to supply either of a first voltage and a second voltage as a reverse bias voltage of the avalanche photodiodes, wherein the first voltage is greater than a breakdown voltage of the avalanche photodiodes and the second voltage is smaller than the breakdown voltage.

An image sensing device, method, an electronic apparatus, and a medium are provided. The image sensing device includes an image acquisition circuit comprising a plurality of image acquisition layer arrays, where at least one of the plurality of image acquisition layer arrays includes a reference layer, a first acquisition layer, and a second acquisition layer. The first acquisition layer is located under the reference layer and is configured to interact with the reference layer, to which a first electric signal is applied, to generate a first image signal. The second acquisition layer is located under the first acquisition layer and is configured to interact with the first acquisition layer to generate a second image signal. An image processing circuit is connected with the image acquisition circuit and configured to generate a target image according to the first image signal and the second image signal.

An image sensor may include a photoelectric device configured to selectively absorb light associated with a first color of three primary colors, a semiconductor substrate stacked with the photoelectric device and including first and second photo-sensing devices configured to sense light associated with second and third colors of the three primary colors, respectively, a first color filter corresponding to the first photo-sensing device and configured to selectively transmit light of the first wavelength spectrum, a second color filter corresponding to the second photo-sensing device and configured to selectively transmit light associated with a mixed color of the first color and the third color, and a first insulating layer between the photoelectric device and the semiconductor substrate and corresponding to the second photo-sensing device, and configured to selectively reflect light of a part of visible light.

To enable tunable wavelength extraction and detection of a narrow band, while maintaining resolution.

Provided is a signal processing device including: an acquisition unit that acquires a signal of a first wavelength band in which wavelength extraction is possible in a tunable manner by means of postprocessing and a signal of a second wavelength band to be used for a special purpose; and a signal processing unit that performs signal processing using the signal of the first wavelength band and the signal of the second wavelength band.

An image sensor includes a first sensor pixel and a second sensor pixel that vertically overlap each other. The first sensor pixel includes a first signal generation circuit, and a first photoelectric converter that is connected to the first signal generation circuit and configured to generate first information from light having a first wavelength. The second sensor pixel includes a second signal generation circuit, and a second photoelectric converter that is connected to the second signal generation circuit and configured to generate second information from light having a second wavelength. A first horizontal surface area of the first photoelectric converter is different from a second horizontal surface area of the second photoelectric converter. An image sensor module includes the image sensor, a light source configured to emit light to a target object, and a dual band pass filter configured to selectively pass light reflected from the target object.