In an array containing rows and columns of multi-color vertical detector color pixel sensors disposed in a rows and columns of the array, a readout wiring architecture includes a plurality of row-select lines for each row of the array, equal to the number of colors in the vertical detector color pixel sensors, an individual column line for each column, a transfer transistor for each individual color detector coupled between a color detector and a column line associated with the column in which the color detector is disposed. Each transfer transistor has a gate coupled to one of the plurality of row-select lines in a row in which the vertical detector color pixel sensor is disposed. The gates of at least some of the transfer transistors in each row for each color detector in adjacent columns of the array are coupled to different ones of the row-select lines for that row.

An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1). ##STR00001##

A stacked imaging device includes a polarizer (21), and a plurality of photoelectric conversion units (10) that is stacked, and the polarizer (21) and the plurality of photoelectric conversion units (10) are stacked, with the polarizer (21) being disposed closer to the light incident side than the plurality of photoelectric conversion units (10).

Provided is an image sensor including a pixel array including a plurality of imaging pixels and a plurality of autofocusing pixels, and a lens array including a plurality of micro lenses facing the plurality of imaging pixels, respectively, and one or more super lenses facing the plurality of autofocusing pixels, wherein each imaging pixel of the plurality of imaging pixels includes a first red meta-photodiode configured to selectively absorb light of a red wavelength band, a first green meta-photodiode configured to selectively absorb light of a green wavelength band, and a first blue meta-photodiode configured to selectively absorb light of a blue wavelength band.

Provided is an image sensor including a pixel array including a plurality of imaging pixels and a plurality of autofocusing pixels, and a lens array including a plurality of micro lenses facing the plurality of imaging pixels, respectively, and one or more super lenses facing the plurality of autofocusing pixels, wherein each imaging pixel of the plurality of imaging pixels includes a first red meta-photodiode configured to selectively absorb light of a red wavelength band, a first green meta-photodiode configured to selectively absorb light of a green wavelength band, and a first blue meta-photodiode configured to selectively absorb light of a blue wavelength band.

A solid-state imaging apparatus includes first, second, and third semiconductor regions. The third semiconductor region has a second conductivity type. The third semiconductor region extends from a region below the second semiconductor region of a first pixel to a region below the second semiconductor region of a second pixel in the first and second pixels adjacent to each other among a plurality of pixels.

A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate and on the substrate, first photodiodes at least partly formed in the substrate, a photosensitive layer covering the substrate, and color filters, the photosensitive layer being interposed between the substrate and the color filters. The image sensor further includes first and second electrodes on either side of the photosensitive layer and delimiting second photodiodes in the photosensitive layer, the first photodiodes being configured to absorb the electromagnetic waves of the visible spectrum and of a first portion of the infrared spectrum and the photosensitive layer being configured to absorb the electromagnetic waves of the visible spectrum and to give way to the electromagnetic waves of said first portion of the infrared spectrum.

The present technology relates to a solid-state imaging device, a driving method therefor, and an electronic apparatus capable of acquiring a signal to detect phase difference and a signal to generate a high dynamic range image at the same time. The solid-state imaging device includes a pixel array unit in which a plurality of pixels that receives light of a same color is arranged under one on-chip lens. The plurality of pixels uses at least one pixel transistor in a sharing manner, some pixels out of the plurality of pixels are set to have a first exposure time, and other pixels are set to have a second exposure time shorter than the first exposure time. The present technology can be applied to, for example, a solid-state imaging device or the like.

The present technology relates to a solid-state imaging device, a driving method therefor, and an electronic apparatus capable of acquiring a signal to detect phase difference and a signal to generate a high dynamic range image at the same time. The solid-state imaging device includes a pixel array unit in which a plurality of pixels that receives light of a same color is arranged under one on-chip lens. The plurality of pixels uses at least one pixel transistor in a sharing manner, some pixels out of the plurality of pixels are set to have a first exposure time, and other pixels are set to have a second exposure time shorter than the first exposure time. The present technology can be applied to, for example, a solid-state imaging device or the like.

A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a plurality of first photoelectric converters that is periodically arranged in each of a first direction and a second direction orthogonal to each other and each detects light in a first wavelength range and each photoelectrically converts the light; and one second photoelectric converter that is stacked on the first photoelectric converter in a stacking direction orthogonal to both the first direction and the second direction, and detects light in a second wavelength range having passed through the plurality of first photoelectric converters and photoelectrically converts the light, in which n times (n is a natural number) a first arrangement period of the plurality of first photoelectric converters in the first direction is substantially equal to a first dimension of the one second photoelectric converter in the first direction, and n times (n is a natural number) a second arrangement period of the plurality of first photoelectric converters in the second direction is substantially equal to a second dimension of the one second photoelectric converter in the second direction.