The present technology relates to a solid-state imaging device, a driving method therefor, and an electronic apparatus capable of acquiring a signal to detect phase difference and a signal to generate a high dynamic range image at the same time. The solid-state imaging device includes a pixel array unit in which a plurality of pixels that receives light of a same color is arranged under one on-chip lens. The plurality of pixels uses at least one pixel transistor in a sharing manner, some pixels out of the plurality of pixels are set to have a first exposure time, and other pixels are set to have a second exposure time shorter than the first exposure time. The present technology can be applied to, for example, a solid-state imaging device or the like.

The present technology relates to a solid-state imaging device, a driving method therefor, and an electronic apparatus capable of acquiring a signal to detect phase difference and a signal to generate a high dynamic range image at the same time. The solid-state imaging device includes a pixel array unit in which a plurality of pixels that receives light of a same color is arranged under one on-chip lens. The plurality of pixels uses at least one pixel transistor in a sharing manner, some pixels out of the plurality of pixels are set to have a first exposure time, and other pixels are set to have a second exposure time shorter than the first exposure time. The present technology can be applied to, for example, a solid-state imaging device or the like.

Organic image sensors are provided. An organic image sensor includes a pixel electrode including a plurality of first electrodes spaced apart from each other. The organic image sensor includes an insulating region including a protruding portion that protrudes beyond surfaces of the plurality of first electrodes. The organic image sensor includes an organic photoelectric conversion layer on the pixel electrode and the protruding portion of the insulating region. Moreover, the organic image sensor includes a second electrode opposite the pixel electrode and on the organic photoelectric conversion layer.

An apparatus is provided. The apparatus includes a semiconductor substrate including a first photodiode to generate a first charge, a second photodiode to generate a second charge, a barrier layer between the first photodiode and the second photodiode, wherein the first photodiode, the barrier layer, and the second photodiode form a stack. The apparatus further includes a floating drain and one or more gates including: a first gate portion on the semiconductor substrate and a second gate portion extending from the front side surface through the first photodiode and reaching the barrier layer. The first gate portion is configured to conduct a first signal to control flow of charge from the first photodiode to the floating drain, and the second gate portion is configured to conduct a second signal to control the barrier layer to control the flow of the second charge.

An image sensor may include a photoelectric device configured to selectively absorb light associated with a first color of three primary colors, a semiconductor substrate stacked with the photoelectric device and including first and second photo-sensing devices configured to sense light associated with second and third colors of the three primary colors, respectively, a first color filter corresponding to the first photo-sensing device and configured to selectively transmit light of the first wavelength spectrum, a second color filter corresponding to the second photo-sensing device and configured to selectively transmit light associated with a mixed color of the first color and the third color, and a first insulating layer between the photoelectric device and the semiconductor substrate and corresponding to the second photo-sensing device, and configured to selectively reflect light of a part of visible light.

A back side illuminated image sensor includes a pixel formed by three doped photosensitive regions that are superposed vertically in a semiconductor substrate. Each photosensitive region is laterally framed by a respective vertical annular gate. The vertical annular gates are biased by a control circuit during an integration phase so as to generate an electrostatic potential comprising potential wells in the central portion of the volume of each doped photosensitive region and a potential barrier at each interface between two neighboring doped photosensitive regions.

Methods and systems for reconstructing images from sensor data are provided. In one example, a method comprises: receiving input data generated by photodiodes each associated with a channel having a target wavelength range for photon-to-charge conversion; obtaining, for each channel, a plurality of channel coefficients, the plurality of channel coefficients being configured to, when combined with the input data to generate channel output data for the each channel, increase a main component of the channel output data contributed by a part of the incident light within the target wavelength range of the each channel with respect to a crosstalk component of the channel output data contributed by a part of the incident light out of the target wavelength range; and generating, for the each channel, the channel output data based on combining the input data with the plurality of channel coefficients to reconstruct an image for the each channel.

In one example, an apparatus comprises: a first photodiode configured to convert a first component of light to a first charge, second photodiode configured to convert a second component of the light to a second charge; and an interface circuit configured to: perform a first quantization and a second quantization of the first charge to generate, respectively, a first result and a second result, the first quantization and the second quantization being associated with different light intensity ranges; provide one of the first result or the second result to represent an intensity of the first component of a pixel; perform the first quantization and the second quantization of the second charge to generate, respectively, a third result and a fourth result; and provide one of the third result or the fourth result to represent an intensity of the second component of the pixel.

A multi-layer image sensor includes: a first image sensor including a first pixel and a second pixel; and a second image sensor including a third pixel and at least one of a fourth pixel and a fifth pixel. The second image sensor has a light receiving surface where the first image sensor is stacked. At least a portion of the fourth pixel is arranged at a position corresponding to a position of the first pixel and at a position overlapping with the first pixel in a stacking direction of the first sensor. At least a portion of the third pixel is arranged at a position corresponding to a position of the second pixel and at a position overlapping with the second pixel in the stacking direction of the first sensor.

[Object] To provide a photoelectric conversion film, a solid-state image sensor, and an electronic device which have an increased imaging characteristic.

[Solution] Provided is a photoelectric conversion film including: a subphthalocyanine derivative represented by the following General Formula (1),

##STR00001## where, in General Formula (1), X represents any substituent selected from among the group consisting of a halogen, a hydroxy group, a thiol group, an amino group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkyl amine group, a substituted or unsubstituted aryl amine group, a substituted or unsubstituted alkylthio group and a substituted or unsubstituted arylthio group, R.sub.1 to R.sub.3 each independently represent a substituted or unsubstituted ring structure, and at least one of R.sub.1 to R.sub.3 includes at least one hetero atom in the ring structure.