The present technology relates to a solid-state imaging device, a signal processing chip, and an electronic apparatus that make it possible to utilize the result of detecting an occurrence of an event in imaging. The solid-state imaging device includes: an event detection unit that detects, as an event, a change in an electrical signal generated by each pixel of a pixel array unit; a region-of-interest detection unit that detects, from a result of detecting the event, a region-of-interest of the pixel array unit; and a pixel signal generation unit that generates a pixel signal constituting an image of a region corresponding to the region-of-interest. The present technology is applicable to, for example, a sensor that detects an event that is a change in an electrical signal of a pixel.

PLS resistance is improved in a solid-state imaging element in which all pixels are simultaneously exposed. A front-stage transfer transistor transfers a charge from a photoelectric conversion element to a front-stage charge holding region and a rear-stage charge holding region which have different capacities. A rear-stage transfer transistor transfers the charge from the rear-stage charge holding region to a floating diffusion region. An intermediate transfer transistor transfers a charge, which remains in the front-stage charge holding region after the charge has been transferred from the rear-stage charge holding region to the floating diffusion region, to the floating diffusion region via the front-stage charge holding region.

A sensing device that detects whether an edge is present or absent achieves improved accuracy in detection of an edge.

The sensing device includes a level control circuit, a comparison circuit, and an edge determination circuit. In this sensing device, the level control circuit amplifies or attenuates the signal level of one of a pair of pixel signals by a predetermined gain. The comparison circuit compares the pair of pixel signals with the signal level of the one pixel signal amplified or attenuated with each other, and outputs a result of the comparison. The edge determination circuit determines whether an edge is present or absent in reference to the comparison result.

An imaging system and a method of imaging are provided. The imaging system includes a single optics module configured for focusing light reflected or emanated from a dynamic scene in the infrared spectrum and a synchronous focal plane array for receiving the focused light and acquiring infrared images having a high spatial resolution and a low temporal resolution from the received focused light. The imaging system further includes an asynchronous neuromorphic vision system configured for receiving the focused light and acquiring neuromorphic event data having a high temporal resolution, and a read-out integrated circuit (ROIC) configured to readout both the infrared images and event data.

Systems and methods to track objects within an operating room with a navigation system that includes an optical sensor including sensing elements and a controller in communication with the optical sensor. The controller controls the optical sensor to process a first quantity of the sensing elements to view a first region of interest. The object is tracked within the first region of interest with the optical sensor. The controller obtains data related to the object within the operating room. The data may include a type of the object and/or prior pose data of the object being tracked. Based on the data, the controller controls the optical sensor to process a second quantity of the sensing elements, different from the first quantity, to view a second region of interest different from the first region of interest. The object is tracked within the second region of interest with the optical sensor.

Provided is a solid-state image pickup element that amplifies the difference between respective signals of a pair of pixels and enables a reduction in the number of wiring lines. The solid-state image pickup element includes an electric-charge accumulation unit, a reference reset transistor, and a readout reset transistor. The electric-charge accumulation unit accumulates electric charge transferred from a photoelectric conversion unit and generates signal voltage corresponding to the amount of the electric charge. The reference reset transistor supplies predetermined reset voltage to the electric-charge accumulation unit in a case of generating predetermined reference voltage. The readout reset transistor supplies voltage different from the reset voltage to the electric-charge accumulation unit in a case of reading out the signal voltage.

Provided is an imaging device that is operable to reduce power upon receiving light, even with resolution of the imaging device increased. An imaging device includes: a plurality of pixels that are arranged in a matrix manner and receive reflected light from a target region, each of the plurality of pixels having a light receiving element that outputs an electric signal based on charge accumulated in either one of first and second charge accumulation parts in accordance with the reflected light; and a control part that executes switching control of the first and second charge accumulation parts by switching frequencies for each pixel region constituted of a pixel group of at least one part of an imaging frame formed by the plurality of pixels, the switching frequencies being different from each other.

Provided is an imaging device that is operable to reduce power upon receiving light, even with resolution of the imaging device increased. An imaging device includes: a plurality of pixels that are arranged in a matrix manner and receive reflected light from a target region, each of the plurality of pixels having a light receiving element that outputs an electric signal based on charge accumulated in either one of first and second charge accumulation parts in accordance with the reflected light; and a control part that executes switching control of the first and second charge accumulation parts by switching frequencies for each pixel region constituted of a pixel group of at least one part of an imaging frame formed by the plurality of pixels, the switching frequencies being different from each other.

An imaging element includes a reading circuit that reads out pixel data obtained by imaging a subject at a first frame rate, a memory that stores the read pixel data, and an output circuit that outputs image data based on the stored pixel data at a second frame rate. The first frame rate is a frame rate higher than the second frame rate. The pixel data includes phase difference pixel data and non-phase difference pixel data different from the phase difference pixel data. The reading circuit reads out the pixel data of each of a plurality of frames in parallel within an output period defined by the second frame rate as a period in which the image data of one frame is output, and performs reading of the non-phase difference pixel data and a plurality of reading of the phase difference pixel data within the output period.

An image sensor includes: a pixel array including a plurality of pixels divided into a plurality of binning areas; a readout circuit configured to, from the plurality of binning areas, receive a plurality of pixel signals including a first sensing signal of first pixels and a second sensing signal of second pixels during a single frame period and output a first pixel value corresponding to the first pixels and a second pixel value corresponding to the second pixels based on the plurality of pixel signals; and an image signal processor configured to generate first image data based on a plurality of first pixel values corresponding to the plurality of binning areas, generate second image data based on a plurality of second pixel values corresponding to the plurality of binning areas, and generate output image data by merging the first image data with the second image data.