An image sensor according to some example embodiments of the present inventive concepts may operate in a global shutter mode, and each pixel circuit may support a high conversion gain (HCG) mode and a low conversion gain (LCG) mode so as to have high dynamic range (HDR). Accordingly, the image sensor according to some example embodiments of the present inventive concepts may have HDR and may generate a high-quality image.

An image sensor according to some example embodiments of the present inventive concepts may operate in a global shutter mode, and each pixel circuit may support a high conversion gain (HCG) mode and a low conversion gain (LCG) mode so as to have high dynamic range (HDR). Accordingly, the image sensor according to some example embodiments of the present inventive concepts may have HDR and may generate a high-quality image.

A pixel circuit 200 includes a readable pixel 210, a comparator 220, and a selector counter circuit 230. The readable pixel 210 performs photoelectric conversion at a photodiode PD11 and produces a readable signal corresponding to an illuminance condition of incident light. The readable pixel 210 includes an overflow path extending to a floating diffusion FD11. The comparator 220 compares a voltage signal (SFout) read out from the readable pixel 210 against a reference signal Vref and outputs a comparison result signal Vout indicating the result of the comparison. The selector counter circuit 230 includes a selector circuit for selecting an external clock or the output Vout from the comparator and a counter circuit for counting the output from the selector circuit.

A pixel circuit 200 includes a readable pixel 210, a comparator 220, and a selector counter circuit 230. The readable pixel 210 performs photoelectric conversion at a photodiode PD11 and produces a readable signal corresponding to an illuminance condition of incident light. The readable pixel 210 includes an overflow path extending to a floating diffusion FD11. The comparator 220 compares a voltage signal (SFout) read out from the readable pixel 210 against a reference signal Vref and outputs a comparison result signal Vout indicating the result of the comparison. The selector counter circuit 230 includes a selector circuit for selecting an external clock or the output Vout from the comparator and a counter circuit for counting the output from the selector circuit.

There is provided a global shutter sensor including a pixel array and a processor. The pixel array acquires first pixel data corresponding to a first exposure period and second pixel data corresponding to a second exposure period of different pixel regions using time division or spatial division, wherein the first exposure period is shorter than the second exposure period. The processor calculates a difference between (the second exposure period/the first exposure period)?the first pixel data and the second pixel data to obtain parasitic light sensitivity of the different pixel regions, and determines gains and/or exposure periods corresponding to the different pixel regions to compensate the parasitic light sensitivity.

There is provided a global shutter sensor including a pixel array and a processor. The pixel array acquires first pixel data corresponding to a first exposure period and second pixel data corresponding to a second exposure period of different pixel regions using time division or spatial division, wherein the first exposure period is shorter than the second exposure period. The processor calculates a difference between (the second exposure period/the first exposure period)?the first pixel data and the second pixel data to obtain parasitic light sensitivity of the different pixel regions, and determines gains and/or exposure periods corresponding to the different pixel regions to compensate the parasitic light sensitivity.

The pixel circuit of the image sensor includes one or more photoelectric conversion elements that generates charges in response to incident light, a first capacitance that receives and stores the charges generated in the one or more photoelectric conversion elements, a second capacitance that is connected to the first capacitance via a switch, and a comparator that compares the amount of charges stored in the first capacitance with a predetermined value. The second capacitance is connected to the first capacitance via the switch, and the pixel circuit includes a comparator that compares the amount of the charges stored in the first capacitance with a predetermined value. When the amount of the charges accumulated in the first capacitance in the comparator is greater than the predetermined value, the switch is turned on and the charges are accumulated by the capacitance that is the sum of the first capacitance and the second capacitance.

The pixel circuit of the image sensor includes one or more photoelectric conversion elements that generates charges in response to incident light, a first capacitance that receives and stores the charges generated in the one or more photoelectric conversion elements, a second capacitance that is connected to the first capacitance via a switch, and a comparator that compares the amount of charges stored in the first capacitance with a predetermined value. The second capacitance is connected to the first capacitance via the switch, and the pixel circuit includes a comparator that compares the amount of the charges stored in the first capacitance with a predetermined value. When the amount of the charges accumulated in the first capacitance in the comparator is greater than the predetermined value, the switch is turned on and the charges are accumulated by the capacitance that is the sum of the first capacitance and the second capacitance.

An image sensor is provided, the image sensor including: an imaging unit that has a first imaging region and a second imaging region, and outputs: a first pixel signal generated according to light incident on the first imaging region; and a second pixel signal generated according to light incident on the second imaging region; a first ramp generating unit that generates a first ramp signal; a second ramp generating unit that generates a second ramp signal; a first signal converting unit that converts the first pixel signal into a first digital image signal based on a result of comparison between the first pixel signal and the first ramp signal; and a second signal converting unit that converts the second pixel signal into a second digital image signal based on a result of comparison between the second pixel signal and the second ramp signal.

An imaging device includes a photoelectric converter including a pixel electrode, a counter electrode, and a photoelectric conversion layer between the pixel electrode and the counter electrode, the photoelectric conversion layer converting incident light into an electric charge; and a voltage application circuit that applies a first voltage between the pixel electrode and the counter electrode in a first frame and that applies a second voltage between the pixel electrode and the counter electrode in a second frame different from the first frame, the first voltage being a constant voltage, the second voltage being a pulse-shaped voltage.