An image sensor may include an array of image pixels. The array of image pixel may be coupled to control circuitry and readout circuitry. One or more image pixels in the array may each include a photodiode and a floating diffusion region. The floating diffusion region may be coupled to a charge storage structure for a low conversion gain configuration and can be coupled to a charge storage structure for a medium conversion gain configuration. The medium conversion gain charge storage structure may be activated when transferring photodiode charge to the floating diffusion region for a high conversion gain configuration. The control circuitry may control each pixel to perform a high conversion gain readout operation, a medium conversion gain readout operation, and a low conversion gain readout operation. If desired, the medium conversion gain readout operation may be omitted.

An image sensor may include an array of image pixels. The array of image pixel may be coupled to control circuitry and readout circuitry. One or more image pixels in the array may each include a photodiode and a floating diffusion region. The floating diffusion region may be coupled to a charge storage structure for a low conversion gain configuration and can be coupled to a charge storage structure for a medium conversion gain configuration. The medium conversion gain charge storage structure may be activated when transferring photodiode charge to the floating diffusion region for a high conversion gain configuration. The control circuitry may control each pixel to perform a high conversion gain readout operation, a medium conversion gain readout operation, and a low conversion gain readout operation. If desired, the medium conversion gain readout operation may be omitted.

An image sensor has a plurality of pixels arranged in a row direction and in a column direction. Each pixel comprises a color filter that has a portion with a low transmissivity and a portion with a high transmissivity, and a photoelectric conversion element that includes a first photoelectric conversion cell which receives light transmitting through the portion with the low transmissivity of the color filter, and a second photoelectric conversion cell which receives light transmitting through the portion with the high transmissivity of the color filter. The plurality of pixels are arranged such that positions of the portions with the low transmissivity for pixels of one color are identical among the plurality of pixels, and the portions with the low transmissivity are positioned adjacent to each other between adjacent pixels of different colors in the row direction only.

An imaging device having a semiconductor substrate that includes a first photoelectric converter, and a second photoelectric converter adjacent to the first photoelectric converter. The imaging device further includes a capacitive element one end of which is coupled to the first photoelectric converter, where the first capacitive element at least partly overlaps, in a plan view, with the second photoelectric converter.

An image processing apparatus includes a first acquisition unit that acquires a first pixel signal output from a first pixel, a second acquisition unit that acquires a second pixel signal output from a second pixel having a size smaller than that of the first pixel, a temperature detection unit that detects temperature; a composition gain determination unit that determines a composition gain corresponding to the detected temperature, and a composition unit that composes the first pixel signal and the second pixel signal multiplied by the composition gain.

An imaging device includes a counter electrode, a photoelectric conversion layer that converts light into a signal charge, a plurality of sets of electrodes each of which collects the signal charge, each of the plurality of sets including a first electrode included in a high-sensitivity pixel and a second electrode included in a low-sensitivity pixel, and an auxiliary electrode which is located, as seen in plan view, between the first electrode and the second electrode in each of the plurality of sets and which is commonly included in the high-sensitivity pixel and the low-sensitivity pixel. The distance between the first electrode and the auxiliary electrode is different from the distance between the second electrode and the auxiliary electrode.

A pixel arrangement comprises a photodiode, a circuit node, a transfer transistor coupled to the photodiode and to the circuit node, an amplifier with an input coupled to the circuit node, a first and a second capacitor, a first transistor coupled to an output of the amplifier and to the first capacitor, a second transistor coupled to the first transistor and to the second capacitor, and a coupling transistor coupled to the circuit node and to the second capacitor.

A pixel arrangement comprises a photodiode, a circuit node, a transfer transistor coupled to the photodiode and to the circuit node, an amplifier with an input coupled to the circuit node, a first and a second capacitor, a first transistor coupled to an output of the amplifier and to the first capacitor, a second transistor coupled to the first transistor and to the second capacitor, and a coupling transistor coupled to the circuit node and to the second capacitor.

An imaging element of the present disclosure includes an analog-to-digital converter configured to convert multiple analog pixel signals that are acquired under multiple imaging conditions different from each other and that are output from a pixel, to multiple digital pixel signals, a threshold setting unit configured to set, on an input side of the analog-to-digital converter, a threshold that is randomly varied, a comparison unit configured to use, as a comparison threshold, the threshold set by the threshold setting unit and compare the comparison threshold with one of the multiple analog pixel signals, and a selection unit configured to select and output, on the basis of a result of comparison from the comparison unit, one of the multiple digital pixel signals that are output from the analog-to-digital converter.

A photoelectric converter includes pixels, vertical output lines to which a signal is outputted from the pixels, clippers configured to limit a potential of the output lines and a controller. Each of the clippers includes a first circuit configured to output an amplification signal according to a predetermined potential and the potential of the output line and a second circuit configured to supply a current according to the amplification signal to the output line. The controller controls each of the clippers to a state selected from states including a first state in which a range in which the potential of the output line can change is limited using the first and second circuits, and a second state in which the range in which the potential of the vertical output line can change is limited with an output of the second circuit deactivated.