Provided is a photoelectric sensor, a random accessible active pixel circuit, an image sensor and a camera. A photoelectric sensor comprises a doped region, a substrate, a doped source region, a doped drain region, and two isolation regions; wherein the doped region is arranged on a bottom surface of the substrate so as to form a photodiode; a cathode of the photodiode is formed in the doped region and is connected to a positive voltage to make the photodiode work in a reverse bias region; wherein the doped source region and the doped drain region are spaced apart on top of the substrate so as to form a field effect transistor; a source is formed on a top surface of the doped source region, and a drain is formed on the top surface of the doped drain region; wherein the two isolation regions are arranged on opposite sides of the substrate, and extend from the doped source region and the doped drain region to the doped region; wherein a gate dielectric layer and a gate between the doped source region and the doped drain region are configured sequentially upwards from the top surface of the substrate; the gate is connected to a voltage to make the field effect transistor select wide dynamic range mode or high gain mode.

Provided is a photoelectric sensor, a random accessible active pixel circuit, an image sensor and a camera. A photoelectric sensor comprises a doped region, a substrate, a doped source region, a doped drain region, and two isolation regions; wherein the doped region is arranged on a bottom surface of the substrate so as to form a photodiode; a cathode of the photodiode is formed in the doped region and is connected to a positive voltage to make the photodiode work in a reverse bias region; wherein the doped source region and the doped drain region are spaced apart on top of the substrate so as to form a field effect transistor; a source is formed on a top surface of the doped source region, and a drain is formed on the top surface of the doped drain region; wherein the two isolation regions are arranged on opposite sides of the substrate, and extend from the doped source region and the doped drain region to the doped region; wherein a gate dielectric layer and a gate between the doped source region and the doped drain region are configured sequentially upwards from the top surface of the substrate; the gate is connected to a voltage to make the field effect transistor select wide dynamic range mode or high gain mode.

Embodiments of the present invention provide an improved method of determining splice losses of mechanically terminated optical connectors in the field, without the need of terminating both sides of the fiber link. Embodiments of the present invention also provide means for improving the quality of mechanical splices as utilized in pre-polished fiber optic connectors for terminating single-mode and multimode optical fibers in the field.

Provided is an image capturing device including a first substrate having a plurality of pixel blocks each including one or more pixels; and a second substrate having a control circuit unit including a first control block including a first exposure control unit for controlling an exposure time of a pixel included in a first pixel block of the plurality of pixel blocks and a second control block including a second exposure control unit for controlling an exposure time of a pixel included in a second pixel block of the plurality of pixel blocks, and a peripheral circuit unit arranged outside the control circuit unit and configured to control signal reading of pixels each included in at least the first pixel block and the second pixel block of the plurality of pixel blocks.

Provided is an image capturing device including a first substrate having a plurality of pixel blocks each including one or more pixels; and a second substrate having a control circuit unit including a first control block including a first exposure control unit for controlling an exposure time of a pixel included in a first pixel block of the plurality of pixel blocks and a second control block including a second exposure control unit for controlling an exposure time of a pixel included in a second pixel block of the plurality of pixel blocks, and a peripheral circuit unit arranged outside the control circuit unit and configured to control signal reading of pixels each included in at least the first pixel block and the second pixel block of the plurality of pixel blocks.

An image sensing device including optical filters adjacent to each other is disclosed. The image sensing device includes a substrate including first and second photoelectric conversion elements configured to generate photocharges corresponding to an intensity of incident light corresponding to a first color; a first pixel including a first optical filter disposed over the first photoelectric conversion element to selectively transmit the light corresponding to the first color; a second pixel including a second optical filter disposed over the second photoelectric conversion element to selectively transmit the light corresponding to the first color; and a first air layer disposed between the first optical filter and the first photoelectric conversion element to reflect light from the first optical filter.

An image sensing device including optical filters adjacent to each other is disclosed. The image sensing device includes a substrate including first and second photoelectric conversion elements configured to generate photocharges corresponding to an intensity of incident light corresponding to a first color; a first pixel including a first optical filter disposed over the first photoelectric conversion element to selectively transmit the light corresponding to the first color; a second pixel including a second optical filter disposed over the second photoelectric conversion element to selectively transmit the light corresponding to the first color; and a first air layer disposed between the first optical filter and the first photoelectric conversion element to reflect light from the first optical filter.

A pixel array for a high definition (HD) image sensor is disclosed. The pixel array includes a number of split pixel cells each including a first photodiode and a second photodiode that is more sensitive to incident light than the first photodiode. The first photodiode can be used to sense bright or high intensity light conditions, while the second photodiode can be used to sense low to medium intensity light conditions. In the disclosed pixel array, the sensitivity of one or more photodiodes is reduced by application of a light attenuation layer over the first photodiode of each split pixel cell. In accordance with methods of the disclosure, the light attenuation layer can be formed prior to the formation of a metal, optical isolation grid structure. This can lead to better control of the thickness and uniformity of light attenuation layer.

A pixel array for a high definition (HD) image sensor is disclosed. The pixel array includes a number of split pixel cells each including a first photodiode and a second photodiode that is more sensitive to incident light than the first photodiode. The first photodiode can be used to sense bright or high intensity light conditions, while the second photodiode can be used to sense low to medium intensity light conditions. In the disclosed pixel array, the sensitivity of one or more photodiodes is reduced by application of a light attenuation layer over the first photodiode of each split pixel cell. In accordance with methods of the disclosure, the light attenuation layer can be formed prior to the formation of a metal, optical isolation grid structure. This can lead to better control of the thickness and uniformity of light attenuation layer.

An analogue to digital converter for converting the analogue output of a dual conversion gain pixel of an image sensor. The dual conversion gain pixel is operable to sequentially output a reset pixel value and a signal pixel value sequentially with both a first gain and a second gain different to the first gain. An image sensor comprising the analogue to digital converter, a system comprising the image sensor and a method are also described herein.