A photoelectric conversion device according to one embodiment includes: a first substrate including a pixel that includes a photoelectric conversion element; and a second substrate including a first control unit that includes a first signal processing unit configured to process a signal from the pixel, the second substrate being stacked together with the first substrate. The signal from the pixel is output to a second signal processing unit disposed at a position different from a position of the first signal processing unit, a path through which the signal from the pixel is output to the first signal processing unit is different from a path through which the signal from the pixel is output to the second signal processing unit, and the first control unit is configured to control the pixel on the basis of the signal processed by the first signal processing unit.

An image sensor generates first digital samples and second digital samples during respective first and second sampling intervals, the first digital samples including at least one digital sample of each pixel of a first plurality of pixels, and the second digital samples including at least one digital sample of each pixel of a second plurality of pixels. A sum of the first digital samples is accumulated within a first counter as the first sampling interval transpires, and a sum of the second digital samples is accumulated within the first counter as the second sampling interval transpires.

An image sensor is provided. The image sensor includes: a plurality of pixels provided in a pixel array; a controller configured to control a first pixel group of the plurality of pixels to have a first exposure integration time and a second pixel group of the plurality of pixels to have a second exposure integration time; and a signal processor configured to generate image data based on digital signals corresponding to pixel signals generated by the pixel array, by performing operations on a first value of the digital signals corresponding to the first pixel group and a second value of the digital signals corresponding to the second pixel group. The first exposure integration time of the first pixel group is independent of illuminance of the image data.

The present technology relates to an imaging device, a driving method, and an electronic apparatus capable of more quickly acquiring a high-quality image. In a pixel of a solid-state imaging device, a photoelectric conversion unit that performs a photoelectric conversion of incident light is disposed. An electric charge/voltage converting unit converts electric charge acquired by the photoelectric conversion unit into a voltage signal. A signal comparator compares a supplied reference signal with the voltage signal acquired by the electric charge/voltage converting unit and outputs a result of the comparison. A storage unit adaptively changes the conversion efficiency of the electric charge/voltage converting unit on the basis of a control signal acquired on the basis of a result of the comparison output from the signal comparator. The present technology can be applied to a solid-state imaging device.

The present technology relates to a solid-state imaging device and an electronic device capable of improving a saturation characteristic. A photo diode is formed on a substrate, and a floating diffusion accumulates a signal charge read from the photo diode. A plurality of vertical gate electrodes is formed from a surface of the substrate in a depth direction in a region between the photo diode and the floating diffusion, and an overflow path is formed in a region interposed between a plurality of vertical gate electrodes. The present technology may be applied to a CMOS image sensor.

Provided is an imaging apparatus that includes a pixel array portion, a plurality of unit pixels being arranged in the pixel array portion and a driving unit controls an operation of the unit pixel, in which the unit pixel includes a photoelectric converter, a charge retention unit configured to retain a charge, a charge-voltage converter converts the charge into a voltage, a first transmitting unit transmits the charge from the photoelectric converter to the charge retention unit, a second transmitting unit transmits the charge from the photoelectric converter to the charge-voltage converter, and a third transmitting unit transmits the charge from the charge retention unit to the charge-voltage converter.

The present technology relates to an imaging device capable of preventing a decrease of sensitivity of the imaging device in a case where a capacitance element is provided in a pixel, a method of manufacturing an imaging device, and an electronic device. The imaging device includes, in a pixel, a photoelectric conversion element and a capacitance element accumulating an electric charge generated by the photoelectric conversion element. The capacitance element includes a first electrode including a plurality of trenches, a plurality of second electrodes each having a cross-sectional area smaller than a contact connected to a gate electrode of a transistor in the pixel, and buried in each of the trenches, and a first insulating film disposed between the first electrode and the second electrode in each of the trenches. The present technology can be applied, for example, to a backside irradiation-type CMOS image sensor.

To prevent an increase in memory capacities in a device for performing image combination.

A data generation unit executes long exposure processing and short exposure processing in sequence, the long exposure processing being performed to generate data including a plurality of pixel data items as long exposure data by performing exposure over a longer time period of two different exposure time periods, the short exposure processing being performed to generate data including a plurality of pixel data items as short exposure data by performing exposure over a shorter time period of the two different exposure time periods after the long exposure processing. A compression unit compresses the long exposure data to generate compression data. A memory holds the compression data over delay time corresponding to the shorter time period of the two exposure time periods. A decompression unit decompresses the held compression data to restore the long exposure data. A combination unit combines the restored long exposure data and the short exposure data.

An image sensor may include a pixel array with high dynamic range functionality and phase detection pixels. The phase detection pixels may be arranged in phase detection pixel groups. Each phase detection pixel group may include three adjacent pixels arranged consecutively in a line. A single microlens may cover all three pixels in the phase detection pixel group, or two microlenses may combine to cover the three pixels in the phase detection pixel group. The edge pixels in each phase detection pixel group may have the same integration time and the same color. The middle pixel in each phase detection pixel group may have the same or different color as the edge pixels, and the same or different integration time as the edge pixels. Phase detection pixel groups may also be formed from two pixels that each are 1.5 times the size of neighboring pixels.

An image sensor including: a first control circuit; a plurality of pixels, each including a photodetector, a comparator of the level of an output signal of the photodetector with a reference value, and a second control circuit connected to the first control circuit, the second circuit being capable of sending a signal of address reading request to the first circuit when the pixel turns on, of receiving an address reading acknowledgement signal transmitted by the first circuit, and of deactivating the pixel on reception of the reading acknowledgement signal; and at least one third control circuit capable, when a pixel receives a reading acknowledgement signal, of blocking the transmission of address reading request signals in at least one adjacent pixel.